Semiconductor device and method for manufacturing the same

ABSTRACT

By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

TECHNICAL FIELD

The present invention relates to a semiconductor device that includes athin film transistor (hereinafter also referred to as a TFT) using anoxide semiconductor film and to a method for manufacturing thesemiconductor device.

In this specification, a semiconductor device generally means a devicewhich can function by utilizing semiconductor characteristics, and anelectro-optical device, a semiconductor circuit, and an electronicappliance are all semiconductor devices.

BACKGROUND ART

In recent years, a technique for forming a thin film transistor (TFT) byusing a semiconductor thin film (having a thickness of approximatelyseveral nanometers to several hundreds of nanometers) formed over asubstrate having an insulating surface has attracted attention. Thinfilm transistors are applied to a wide range of electronic devices suchas ICs or electro-optical devices, and prompt development of thin filmtransistors that are to be used as switching elements in image displaydevices, in particular, is being pushed. Various metal oxides are usedfor a variety of applications. For example, indium oxide is a well-knownmaterial and used as a material of a transparent electrode which isneeded in a liquid crystal display or the like.

Some metal oxides have semiconductor characteristics. Examples of suchmetal oxides having semiconductor characteristics include tungstenoxide, tin oxide, indium oxide, zinc oxide, and the like. Thin filmtransistors in which a channel formation region is formed using suchmetal oxides having semiconductor characteristics are known (PatentDocuments 1 and 2).

Moreover, there is a trend in an active matrix semiconductor devicetypified by a liquid crystal display device towards a larger screen,e.g., a 60-inch diagonal screen, and further, the development of anactive matrix semiconductor device is aimed even at a screen size of adiagonal of 120 inches or more. In addition, a trend in resolution of ascreen is toward higher definition, e.g., high-definition (HD) imagequality (1366×768) or full high-definition (FHD) image quality(1920×1080), and prompt development of a so-called 4K Digital Cinemadisplay device, which has a resolution of 3840×2048 or 4096×2180, isalso pushed.

Increase in screen size or definition tends to increase wiringresistance in a display portion. Increase in wiring resistance causesdelay of signal transmission to an end portion of a signal line, drop involtage of a power supply line, or the like. As a result, deteriorationof display quality, such as display unevenness or a defect in grayscale,or increase in power consumption is caused.

In order to suppress increase in wiring resistance, a technique offorming a low-resistance wiring layer with the use of copper (Cu) isconsidered (e.g., see Patent Documents 3 and 4).

REFERENCE [Patent Document]

-   [Patent Document 1] Japanese Published Patent Application No.    2007-123861-   [Patent Document 2] Japanese Published Patent Application No.    2007-96055-   [Patent Document 3] Japanese Published Patent Application No.    2004-133422-   [Patent Document 4] Japanese Published Patent Application No.    2004-163901

DISCLOSURE OF INVENTION

In order to prevent increase in wiring resistance, the technique offorming a low-resistance wiring layer with the use of copper (Cu) isconsidered. However, since Cu easily diffuses into a semiconductor orsilicon oxide, the operation of a semiconductor device might be unstableand yield might be significantly reduced.

An object of one embodiment of the present invention is to provide asemiconductor device typified by a display device having higher displayquality, in which an adverse effect such as voltage drop, a defect insignal writing to a pixel, a defect in grayscale, and the like due towiring resistance are prevented.

Another object of one embodiment of the present invention is to realizehigh speed operation of a semiconductor device.

Another object of one embodiment of the present invention is to realizereduction in power consumption of a semiconductor device.

Another object of one embodiment of the present invention is to realizeimprovement in definition of a semiconductor device.

Another object of one embodiment of the present invention is to providea thin film transistor which includes an oxide semiconductor film andoperates stably and a semiconductor device which includes the thin filmtransistor.

One embodiment of the present invention disclosed in this specificationis a semiconductor device including: a first insulating layer includingsilicon nitride over a substrate; a first conductive layer including Cuover the first insulating layer; a second conductive layer which isprovided over the first conductive layer and covers the first conductivelayer; a second insulating layer including silicon nitride over thesecond conductive layer; a third insulating layer including siliconoxide over the second insulating layer; an island-like oxidesemiconductor layer over the third insulating layer; third conductivelayers which are provided over the oxide semiconductor layer andfunction as a source electrode and a drain electrode; a fourthinsulating layer including silicon oxide over the third conductivelayers; a fifth insulating layer including silicon nitride over thefourth insulating layer; a fourth conductive layer which is electricallyconnected to one of the third conductive layers functioning as thesource electrode and the drain electrode through an opening provided inthe fourth insulating layer and the fifth insulating layer; a fifthconductive layer which and includes Cu and overlaps with the fourthconductive layer; a sixth insulating layer including silicon nitridewhich covers the fifth conductive layer; and a sixth conductive layerwhich is electrically connected to the other of the third conductivelayers functioning as the source electrode and the drain electrodethrough an opening provided in the fourth insulating layer, the fifthinsulating layer, and the sixth insulating layer, wherein the firstconductive layer and the fifth conductive layer do not overlap with theoxide semiconductor layer.

Note that the first conductive layer or the fifth conductive layerpreferably includes at least one element selected from W, Ta, Mo, Ti,Cr, Zr, and Ca. In addition, the second conductive layer preferablyincludes an element with a higher meting point than Cu.

Another embodiment of the present invention disclosed in thisspecification is a method for manufacturing a semiconductor device,including the steps of: forming a first insulating layer includingsilicon nitride over a substrate; forming a first conductive layerincluding Cu over the first insulating layer; forming a secondconductive layer over the first conductive layer to cover the firstconductive layer; forming a second insulating layer including siliconnitride over the second conductive layer; forming a third insulatinglayer including silicon oxide over the second insulating layer; formingan island-like oxide semiconductor layer over the third insulatinglayer; forming third conductive layers functioning as a source electrodeand a drain electrode over the island-like oxide semiconductor layer;forming a fourth insulating layer including silicon oxide over the thirdconductive layers; forming a fifth insulating layer including siliconnitride over the fourth insulating layer; forming a fourth conductivelayer which is electrically connected to one of the third conductivelayers functioning as the source electrode and the drain electrodethrough an opening provided in the fourth insulating layer and the fifthinsulating layer; forming a fifth conductive layer including Cu whichoverlaps with the fourth conductive layer; forming a sixth insulatinglayer including silicon nitride which covers the fifth conductive layer;and forming a sixth conductive layer which is electrically connected tothe other of the third conductive layers functioning as the sourceelectrode and the drain electrode through an opening provided in thefourth insulating layer, the fifth insulating layer, and the sixthinsulating layer, wherein the oxide semiconductor layer is dehydrated ordehydrogenated by first heat treatment after the oxide semiconductorlayer is formed, and wherein the first conductive layer and the fifthconductive layer do not overlap with the oxide semiconductor layer.

Note that it is preferable that the first heat treatment be performed byan RTA method at a temperature of higher than or equal to 400° C. andlower than 750° C. in a rare gas or nitrogen atmosphere. In addition, itis preferable that second heat treatment be performed at a temperaturelower than that of the first heat treatment after the fourth insulatinglayer is formed.

Another embodiment of the present invention disclosed in thisspecification is a semiconductor device including: a base insulatinglayer including silicon nitride over a substrate; a gate wiring formedover the base insulating layer and formed using a stack of a conductivelayer including Cu and a conductive layer which includes metal with ahigh melting point and covers the conductive layer including Cu; a gateinsulating layer formed over the gate wiring and formed using a stack ofan insulating layer including silicon nitride and an insulating layerincluding silicon oxide; an island-like oxide semiconductor layer overthe gate insulating layer; a source electrode and a drain electrode overthe island-like semiconductor layer; an interlayer insulating layerformed over the source electrode and the drain electrode and formedusing a stack of an insulating layer including silicon oxide and aninsulating layer including silicon nitride; a source wiring formed overthe interlayer insulating layer and formed using a stack of a barrierlayer having conductivity and a conductive layer including Cu which isprovided over the barrier layer, wherein the source wiring iselectrically connected to the source electrode through an openingprovided in the interlayer insulating layer; a passivation layerincluding silicon nitride over the source wiring; and a conductive layerwhich is electrically connected to the drain electrode through anopening provided in the passivation layer and the interlayer insulatinglayer, over the passivation layer, wherein the conductive layerincluding Cu in the gate wiring and the conductive layer including Cu inthe source wiring do not overlap with the semiconductor layer where achannel of a thin film transistor is formed.

Another embodiment of the present invention disclosed in thisspecification is a semiconductor device including: an active matrixcircuit, a driver circuit, and a protection circuit over a substrate,wherein a source wiring, a gate wiring, a common potential wiring, and apower supply line in the active matrix circuit include a wiring layerincluding Cu, wherein the wiring layer including Cu does not overlapwith a semiconductor layer of a thin film transistor in the activematrix circuit, wherein thin film transistors in the driver circuit andthe protection circuit are connected without using the wiring layerincluding Cu, and wherein the wiring layer including Cu is sandwichedbetween insulating layers including silicon nitride.

For the semiconductor layer, an oxide semiconductor expressed byInMO₃(ZnO)_(m) (m>0 and m is not a natural number) can be used. Notethat M denotes one metal element or a plurality of metal elementsselected from Ga, Fe, Ni, Mn, and Co. For example, any of the followingis used: an In—Ga—Zn—O-based oxide semiconductor film, anIn—Sn—Zn—O-based oxide semiconductor film, an In—Al—Zn—O-based oxidesemiconductor film, a Sn—Ga—Zn—O-based oxide semiconductor film, anAl—Ga—Zn—O-based oxide semiconductor film, a Sn—Al—Zn—O-based oxidesemiconductor film, an In—Zn—O-based oxide semiconductor film, aSn—Zn—O-based oxide semiconductor film, an Al—Zn—O-based oxidesemiconductor film, an In—O-based oxide semiconductor film, a Sn—O-basedoxide semiconductor film, and a Zn—O-based oxide semiconductor film.

By using a conductive layer including Cu for a long lead wiring such asa source wiring that transmits a video signal to each pixel TFT, a gatewiring that controls on/off of each pixel TFT, a storage capacitor line,a power supply line which are provided in an active matrix circuit, apower supply line, a common potential line, and a lead line from aterminal portion that performs signal input and output to and from anexternal portion which are provided in a driver circuit, increase inwiring resistance can be suppressed.

By providing the conductive layer including Cu in such a manner that itdoes not overlap with the semiconductor layer where a channel region ofthe TFT is formed, an adverse effect due to diffusion of Cu can beprevented.

By providing insulating layers including silicon nitride over and underthe conductive layer including Cu so that the conductive layer includingCu is sandwiched between or surrounded by the insulating layers,diffusion of Cu can be prevented.

Note that a gate in this specification refers to the entire gateelectrode and gate wiring or part thereof. The gate wiring is a wiringfor electrically connecting a gate electrode of at least one transistorto another electrode or another wiring, and includes a scan line in adisplay device in its category, for example.

A source refers to the entire source region, source electrode, andsource wiring or part thereof. The source region indicates a region in asemiconductor layer, where the resistivity is less than or equal to agiven value. The source electrode indicates part of a conductive layer,which is connected to the source region. The source wiring is a wiringfor electrically connecting a source electrode of at least onetransistor to another electrode or another wiring. For example, in thecase where a signal line in a display device is electrically connectedto a source electrode, the source wiring includes the signal line in itscategory.

A drain refers to the entire drain region, drain electrode, and drainwiring or part thereof. The drain region indicates a region in asemiconductor layer, where the resistivity is less than or equal to agiven value. The drain electrode indicates part of a conductive layer,which is connected to the drain region. The drain wiring is a wiring forelectrically connecting a drain electrode of at least one transistor toanother electrode or another wiring. For example, in the case where asignal line in a display device is electrically connected to a drainelectrode, the drain wiring includes the signal line in its category.

In addition, in this document (the specification, the scope of claims,the drawings, and the like), a source and a drain of a transistorinterchange depending on the structure, the operating conditions, or thelike of the transistor; therefore, it is difficult to determine which isthe source and which is the drain. Therefore, in this document (thespecification, the scope of claims, the drawings, and the like), oneterminal which is freely selected from the source and the drain isreferred to as one of the source and the drain, whereas the otherterminal is referred to as the other of the source and the drain.

Note that a light-emitting device in this specification means an imagedisplay device, a light-emitting device, or a light source (including alighting device). In addition, the light-emitting device includes thefollowing modules in its category: a module in which a connector such asa flexible printed circuit (FPC), a tape automated bonding (TAB) tape,or a tape carrier package (TCP) is attached to a light-emitting device;a module having a TAB tape or a TCP at the tip of which a printed wiringboard is provided; and a module in which an integrated circuit (IC) isdirectly mounted on a substrate provided with a light-emitting elementby a chip on glass (COG) method.

In a semiconductor device typified by a display device, by using ahighly reliable thin film transistor which includes an oxidesemiconductor film and has favorable electric characteristics and asource wiring and a gate wiring which are formed using a conductivelayer including Cu, favorable display can be performed even on alarge-sized screen in which the area of a pixel portion is increased.According to an embodiment of the present invention, wiring resistancein the pixel portion can be largely reduced; thus, an embodiment of thepresent invention can be applied to even a large-sized screen such as a60-inch diagonal screen or a 120-inch diagonal screen. Moreover, anembodiment of the present invention can also be applied to ahigh-definition screen of full high-definition or 4K Digital Cinema.

BRIEF DESCRIPTION OF DRAWINGS

In the accompanying drawings:

FIG. 1A is a plan view and FIG. 1B is a circuit diagram illustrating anembodiment of the present invention;

FIG. 2A is a plan view and FIGS. 2B and 2C are cross-sectional viewsillustrating an embodiment of the present invention;

FIG. 3 is a cross-sectional view illustrating an embodiment of thepresent invention;

FIGS. 4A to 4D are cross-sectional process views illustrating anembodiment of the present invention;

FIGS. 5A to 5C are cross-sectional process views illustrating anembodiment of the present invention;

FIGS. 6A to 6D illustrate multi-tone masks;

FIGS. 7A to 7E are cross-sectional process views illustrating anembodiment of the present invention;

FIG. 8A is a cross-sectional view, FIG. 8B is a circuit diagram, andFIG. 8C is a plan view illustrating an embodiment of the presentinvention;

FIG. 9A is a circuit diagram and FIG. 9B is a plan view illustrating anembodiment of the present invention;

FIG. 10 is a cross-sectional view illustrating an embodiment of thepresent invention;

FIG. 11A is a plan view and FIG. 11B is a cross-sectional viewillustrating an embodiment of the present invention;

FIGS. 12A1 and 12B1 are cross-sectional views and FIGS. 12A2 and 12B2are plan views illustrating an embodiment of the present invention;

FIGS. 13A1 and 13B1 are cross-sectional views and FIGS. 13A2 and 13B2are plan views illustrating an embodiment of the present invention;

FIGS. 14A1, 14A2, and 14B illustrate a semiconductor device;

FIGS. 15A and 15B illustrate a semiconductor device;

FIG. 16 illustrates a pixel equivalent circuit of a semiconductordevice;

FIGS. 17A to 17C illustrate semiconductor devices;

FIGS. 18A and 18B are block diagrams each illustrating a display device;

FIG. 19A illustrates a configuration of a signal line driver circuit andFIG. 19B is a timing chart illustrating operation thereof;

FIGS. 20A to 20C are circuit diagrams illustrating a configuration of ashift register;

FIG. 21A is a circuit diagram of a shift register and FIG. 21B is atiming chart illustrating operation thereof;

FIG. 22 illustrates a semiconductor device;

FIG. 23 illustrates a semiconductor device;

FIGS. 24A and 24B illustrate applications of electronic paper;

FIG. 25 is an external view illustrating an example of an electronicbook reader;

FIGS. 26A and 26B are external views respectively illustrating atelevision set and a digital photo frame;

FIGS. 27A and 27B are external views each illustrating an example of anamusement machine;

FIGS. 28A and 28B are external views respectively illustrating anexample of a portable computer and an example of a cellular phone;

FIG. 29 illustrates a semiconductor device;

FIG. 30 illustrates a semiconductor device;

FIG. 31 illustrates a semiconductor device;

FIG. 32 illustrates a semiconductor device;

FIG. 33 illustrates a semiconductor device;

FIG. 34 illustrates a semiconductor device;

FIG. 35 illustrates a semiconductor device;

FIG. 36 illustrates a semiconductor device;

FIG. 37 illustrates a semiconductor device;

FIG. 38 is a cross-sectional view illustrating an embodiment of thepresent invention;

FIGS. 39A and 39B are cross-sectional views and FIG. 39C is a circuitdiagram illustrating an embodiment of the present invention;

FIGS. 40A to 40C illustrate crystal structures of metal and oxygen inIGZO;

FIGS. 41A and 41B show structural models of metal atoms and oxygen atomsin the vicinity of an interface between a tungsten film and an oxidesemiconductor film;

FIGS. 42A and 42B show structural models of metal atoms and oxygen atomsin the vicinity of an interface between a molybdenum film and an oxidesemiconductor film;

FIGS. 43A and 43B show structural models of metal atoms and oxygen atomsin the vicinity of an interface between a titanium film and an oxidesemiconductor film;

FIG. 44 shows a crystal structure of titanium dioxide having a rutilestructure;

FIG. 45 shows a density of states of titanium dioxide having a rutilestructure;

FIG. 46 shows a density of states of titanium dioxide in anoxygen-deficient state;

FIG. 47 shows a density of states of titanium monoxide; and

FIG. 48 is a band diagram illustrating an embodiment of the presentinvention.

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiments will be described in detail with reference to the drawings.Note that the present invention is not limited to the followingdescription, and it is easily understood by those skilled in the artthat the mode and detail can be changed in various ways withoutdeparting from the spirit and scope of the present invention. Therefore,the present invention should not be construed as being limited to thedescription in the embodiments below. Note that in the structures of theinvention described below, the same portions or portions having similarfunctions are denoted by the same reference numerals in differentdrawings, and description of such portions is not repeated.

Embodiment 1

In this embodiment, one embodiment of a display device wheresemiconductor elements that include an oxide semiconductor and areprovided in the pixel and the periphery of the pixel portion are formedwill be described with reference to FIGS. 1A and 1B.

FIG. 1A illustrates a structure of a display device 30. The displaydevice 30 includes a gate terminal portion 7 and a source terminalportion 8 over a substrate 100. The display device 30 is provided withgate wirings (20_1 to 20 _(—) n (note that n is a natural number))including the gate wiring 20_1 and the gate wiring 20_2, and sourcewirings (60_1 to 60 _(—) m (note that m is a natural number)) includingthe source wiring 60_1 and the source wiring 60_2. Further, in a pixelregion 94 of the display device 30, pixels 93 are arranged in matrix.Note that each of the pixels 93 is connected to at least one gate wiringand one source wiring.

Further, the display device 30 includes a common wiring 44, a commonwiring 45, a common wiring 46, and a common wiring 65. For example, thecommon wiring 45 is connected to the common wiring 65 through aconnection portion 95. The common wirings are electrically connected toeach other to have the same potential.

In addition, the common wiring 44, the common wiring 45, the commonwiring 46, and the common wiring 65 are connected to a terminal 71, aterminal 75, a terminal 81, and a terminal 85. The common wirings eachinclude a common connection portion 96 which can be electricallyconnected to a counter substrate.

Further, each of gate signal line terminals (70_1 to 70 _(—) i (notethat i is a natural number)) of the gate terminal portion 7 is connectedto a gate driver circuit 91 (hereinafter also referred to as a scan linedriver circuit) and connected to the common wiring 46 through aprotection circuit 97. In addition, a terminal 74 is connected to thegate driver circuit 91 and connects an external power source (notillustrated) to the gate driver circuit 91. Note that each of the gatewirings (20_1 to 20 _(—) n (note that n is a natural number)) isconnected to the common wiring 65 through the protection circuit 97.

Further, each of source signal line terminals (80_1 to 80 _(—) k (notethat k is a natural number)) of the source terminal portion 8 isconnected to a source driver circuit 92 (hereinafter also referred to asa signal line driver circuit), and connected to the common wiring 44through the protection circuit 97. In addition, a terminal 84 isconnected to the source driver circuit 92 and connects an external powersource (not illustrated) to the source driver circuit 92. Each of thesource wirings (60_1 to 60 _(—) m (note that m is a natural number)) isconnected to the common wiring 45 through the protection circuit 97.

The gate driver circuit and the source driver circuit can be formed atthe same time as the pixel with the use of a thin film transistordisclosed in this specification. Moreover, one or both of the gatedriver circuit and the source driver circuit may be formed over asubstrate which is separately prepared with the use of a single crystalsemiconductor film or a polycrystalline semiconductor film, and thenmounted by a COG method, a wire bonding method, a TAB method, or thelike.

An example of an equivalent circuit that can be applied to the pixel 93is illustrated in FIG. 1B. The equivalent circuit illustrated in FIG. 1Bis an example in the case where a liquid crystal element is used as adisplay element in the pixel 93.

Next, an example of a pixel structure of the display device illustratedin FIGS. 1A and 1B is described with reference to FIGS. 2A to 2C. FIG.2A is a plan view illustrating a plan structure of the pixel, and FIGS.2B and 2C are cross-sectional views each illustrating a stacked-layerstructure of the pixel. Note that chain lines A1-A2, B1-B2, and C1-C2 inFIG. 2A correspond to cross sections A1-A2, B1-B2, and C1-C2 in FIG. 2B,respectively. Chain line D1-D2 in FIG. 2A corresponds to cross sectionD1-D2 in FIG. 2C.

In cross section A1-A2 and cross section D1-D2, stacked-layer structuresof a thin film transistor 250 used in the pixel portion are illustrated.The thin film transistor 250 is one embodiment of a thin film transistorhaving a bottom gate structure.

In cross section A1-A2 and cross section D1-D2, an insulating layer 201provided over a substrate 200, a gate wiring 202 provided over theinsulating layer 201, a gate wiring 203 provided over the gate wiring202, an insulating layer 204 provided over the gate wiring 203, asemiconductor layer 205 provided over the insulating layer 204, a pairof electrodes 207 a and 207 b provided over the semiconductor layer 205,an insulating layer 208 provided over the electrode 207 a, the electrode207 b, and the semiconductor layer 205, a source wiring 209 which is incontact with the electrode 207 a through an opening provided in theinsulating layer 208, a source wiring 210 provided over the sourcewiring 209, an insulating layer 211 provided over the source wiring 210,and an electrode 212 which is in contact with the electrode 207 bthrough an opening provided in the insulating layer 211 and theinsulating layer 208 are illustrated.

Further, in cross section B1-B2, a stacked-layer structure of a storagecapacitor (also referred to as a Cs capacitor) is illustrated. In crosssection B1-B2, the insulating layer 201 over the substrate 200, astorage capacitor wiring 213 over the insulating layer 201, a storagecapacitor wiring 214 over the storage capacitor wiring 213, theinsulating layer 204 over the storage capacitor wiring 214, theelectrode 207 b over the insulating layer 204, the insulating layer 208over the electrode 207 b, the insulating layer 211 over the insulatinglayer 208, and the electrode 212 over the insulating layer 211 areillustrated. Here, an oxide semiconductor is preferably used as thesemiconductor layer 205. For the details of the oxide semiconductor usedfor the semiconductor layer 205, Embodiment 2 can be referred to.

Further, in cross section C1-C2, a stacked-layer structure in a wiringintersection of the gate wiring and the source wiring is illustrated. Incross section C1-C2, the insulating layer 201 over the substrate 200,the gate wiring 202 over the insulating layer 201, the gate wiring 203over the gate wiring 202, the insulating layer 204 over the gate wiring203, the insulating layer 208 over the insulating layer 204, the sourcewiring 209 over the insulating layer 208, the source wiring 210 over thesource wiring 209, and the insulating layer 211 over the source wiring210 are illustrated.

Note that Embodiment 2 can be referred to for details of a material andthe like of each portion.

Note that in the wiring intersection, a semiconductor layer may beformed between the insulating layer 204 and the insulating layer 208.With such a structure, the distance in the film thickness directionbetween the gate wiring and the source wiring can be increased, and thusparasitic capacitance in the wiring intersection can be reduced.

In addition, one embodiment of the present invention is not limited tothe pixel structure illustrated in FIG. 2B. FIG. 3 illustrates anexample of a pixel structure different from that of FIG. 2B. A thin filmtransistor 251 illustrated in FIG. 3 is one embodiment of a thin filmtransistor having a bottom gate structure and can be called a channelprotective thin film transistor.

The thin film transistor 251 includes the insulating layer 201 providedover the substrate 200, the gate wiring 202 provided over the insulatinglayer 201, the gate wiring 203 provided over the gate wiring 202, theinsulating layer 204 provided over the gate wiring 203, thesemiconductor layer 205 provided over the insulating layer 204, achannel protective layer 225 provided over the semiconductor layer 205,the pair of electrodes 207 a and 207 b provided over the channelprotective layer 225 and the semiconductor layer 205, the insulatinglayer 208 provided over the electrode 207 a, the electrode 207 b, andthe semiconductor layer 205, the source wiring 209 which is in contactwith the electrode 207 a through an opening provided in the insulatinglayer 208, the source wiring 210 provided over the source wiring 209,the insulating layer 211 provided over the source wiring 210, and theelectrode 212 which is in contact with the electrode 207 b through anopening provided in the insulating layer 211 and the insulating layer208.

A storage capacitor of the pixel which is described as an example inthis embodiment is formed so that the insulating layer 204 is sandwichedbetween the electrode 207 b and the storage capacitor wirings 213 and214 which are formed using the same layers as the gate wirings. Sincethe electrode 207 b is close to the storage capacitor wirings 213 and214 in the thickness direction as compared to the electrode 212 and thesource wiring 210, the electrode 207 b is suitable for the storagecapacitor.

By forming the gate wiring 202 and the source wiring 210 with the use ofa conductive material including Cu, increase in wiring resistance can beprevented. Further, when the gate wiring 203 is formed using aconductive material including an element with a higher melting pointthan Cu, such as W, Ta, Mo, Ti, or Cr, so as to be in contact with andcover the gate wiring 202, migration of the gate wiring 202 issuppressed and reliability of the semiconductor device can be improved.Furthermore, by providing insulating layers including silicon nitride asthe insulating layers over and under the gate wiring 202 including Cu sothat the gate wiring 202 including Cu may be sandwiched between orsurrounded by the insulating layers, diffusion of Cu included in thegate wiring 202 can be prevented.

In addition, the gate wiring 202 is provided in such a manner that itdoes not overlap with the semiconductor layer 205 in which a channel ofthe thin film transistor is formed, and part of the gate wiring 203which is in contact with the gate wiring 202 is extended to overlap withthe semiconductor layer 205 and function as a gate electrode. With sucha structure, an influence of Cu included in the gate wiring 202 on thethin film transistor including the semiconductor layer comprising theoxide semiconductor can be further reduced.

At least the insulating layer 204 and the insulating layer 208 aresandwiched between the gate wiring and the source wiring in the wiringintersection, whereby the distance in the thickness direction betweenthe wirings can be increased. As a result, parasitic capacitance in thewiring intersection can be reduced.

Note that this embodiment can be combined with any of the otherembodiments in this specification as appropriate.

Embodiment 2

In this embodiment, a manufacturing process of a pixel portion in thedisplay device described in Embodiment 1 will be described withreference to FIGS. 4A to 4D and FIGS. 5A to 5C. Note that cross sectionA1-A2, cross section B1-B2, cross section C1-C2, and cross section D1-D2in FIGS. 4A to 4D and FIGS. 5A to 5C are cross-sectional views takenalong chain lines A1-A2, B1-B2, C1-C2, and D1-D2 in FIG. 2A,respectively.

First, as a base insulating layer, the insulating layer 201 includingsilicon nitride is formed to a thickness of greater than or equal to 50nm and less than or equal to 300 nm, preferably greater than or equal to100 nm and less than or equal to 200 nm, over the substrate 200. As thesubstrate 200, in addition to a glass substrate and a ceramic substrate,a plastic substrate or the like with heat resistance to withstand aprocess temperature in this manufacturing process can be used. In thecase where the substrate does not need a light-transmitting property, ametal substrate, such as a stainless steel alloy substrate, providedwith an insulating film on its surface may be used. As a glasssubstrate, for example, an alkali-free glass substrate of bariumborosilicate glass, aluminoborosilicate glass, aluminosilicate glass, orthe like may be used. Alternatively, a quartz substrate, a sapphiresubstrate, or the like can be used. Further, as the substrate 200, aglass substrate with any of the following sizes can be used: the 3rdgeneration (550 mm×650 mm), the 3.5th generation (600 mm×720 mm or 620mm×750 mm), the 4th generation (680×880 mm or 730 mm×920 mm), the 5thgeneration (1100 mm×1300 mm), the 6th generation (1500 mm×1850 mm), the7th generation (1870 mm×2200 mm), the 8th generation (2200 mm×2400 mm),the 9th generation (2400 mm×2800 mm or 2450 mm×3050 mm), or the 10thgeneration (2950 mm×3400 mm). In this embodiment, aluminoborosilicateglass is used for the substrate 200.

The insulating layer 201 can be formed as a single layer or a stackedlayer of a silicon nitride film and/or a silicon nitride oxide film.Note that in this specification, silicon nitride oxide refers to siliconthat includes more nitrogen than oxygen and, in the case wheremeasurements are performed using Rutherford backscattering spectrometry(RBS) and hydrogen forward scattering spectrometry (HFS), includesoxygen, nitrogen, silicon, and hydrogen at concentrations ranging from 5at. % to 30 at. %, 20 at. % to 55 at. %, 25 at. % to 35 at. %, and 10at. % to 30 at. %, respectively. The insulating layer 201 can be formedby a sputtering method, a CVD method, a coating method, a printingmethod, or the like as appropriate. In this embodiment, a 100-nm-thicksilicon nitride film is formed as the insulating layer 201. Note thatthe film may be doped with phosphorus (P) or boron (B).

Then, a conductive film including Cu is formed to a thickness of greaterthan or equal to 100 nm and less than or equal to 500 nm, preferablygreater than or equal to 200 nm and less than or equal to 300 nm, overthe insulating layer 201 by a sputtering method, a vacuum evaporationmethod, or a plating method. A mask is formed over 5 the conductive filmby a photolithography method, an inkjet method, or the like and theconductive film is etched using the mask; thus, the gate wiring 202 andthe storage capacitor wiring 213 can be formed.

In order to improve adhesion of the gate wiring 202, a metal layerincluding W, Ta, Mo, Ti, Cr, or the like, an alloy layer including anyof these in combination, or a layer of a nitride or an oxide of any ofthese may be formed between the insulating layer 201 and the gate wiring202.

Further, in the formation of the conductive film including Cu by asputtering method, a target material is not limited to a pure Cumaterial, and a Cu alloy material in which an element such as W, Ta, Mo,Ti, Cr, Al, Zr, or Ca is added alone or in combination to Cu at 10weight % or less, preferably 2 weight % or less, can be used. By using aCu alloy material, adhesion of a Cu wiring can be improved or migrationsuch as hillocks can be less likely to occur.

A rare gas typified by Ar can be used as a sputtering gas; if a rare gasto which oxygen is added is used as a sputtering gas, Cu oxide is formedat the interface with the underlying layer, whereby adhesion can beimproved. At this time, by using a target material to which an elementwhich is oxidized more easily than Cu is added, adhesion can be furtherimproved. Note that since Cu oxide has higher resistance than Cu, it ispreferable that a rare gas to which oxygen is added be used as asputtering gas only at the beginning of sputtering, and then only a raregas be used for sputtering.

Note that a photomask is not used when the resist mask is formed by aninkjet method, which results in reducing manufacturing cost. Further,when a conductive nanopaste of copper or the like is discharged over thesubstrate by an inkjet method and baked, the gate wiring 202 and thestorage capacitor wiring 213 can be formed at low cost.

In this embodiment, a 250-nm-thick Cu film is formed by a sputteringmethod over the insulating layer 201 and the Cu film is selectivelyetched using a resist mask formed by a first photolithography step,whereby the gate wiring 202 and the storage capacitor wiring 213 areformed (see FIG. 4A).

Then, a conductive film of an element such as W, Ta, Mo, Ti, or Cr,which has a higher melting point than Cu, or an alloy or the likeincluding a combination of any of these elements is formed to athickness of greater than or equal to 5 nm and less than or equal to 200nm, preferably greater than or equal to 10 nm and less than or equal to100 nm, by a sputtering method, a vacuum evaporation method, or the likeover the gate wiring 202. The conductive film is not limited to asingle-layer film including any of the above elements and can be astacked-layer film of two or more layers. In this embodiment, a200-nm-thick single layer of tungsten is formed as the conductive film.Note that it is preferable that the conductive film have enough heatresistance to withstand at least first heat treatment and second heattreatment performed later.

Further, a transparent conductive oxide including any of indium, tin,and zinc may be used for the conductive film. For example, indium oxide(In₂O₃) or an indium oxide-tin oxide alloy (In₂O₃—SnO₂, abbreviated toITO) is preferably used. Alternatively, a transparent conductive oxideto which an insulating oxide such as silicon oxide is added may be used.When a transparent conductive oxide is used for the conductive film, theaperture ratio of the display device can be improved.

Then, a mask is formed over the conductive film by a photolithographymethod, an inkjet method, or the like, and then the conductive film isetched using the mask; thus, the gate wiring 203 and the storagecapacitor wiring 214 can be formed. In this embodiment, the conductivefilm is selectively etched using a resist mask formed by a secondphotolithography step, whereby the gate wiring 203 and the storagecapacitor wiring 214 are formed (see FIG. 4B).

A gate wiring and a storage capacitor wiring are formed to have astructure in which a conductive layer including an element having ahigher melting point than Cu covers a conductive layer including Cu.With such a structure, migration of the layer including Cu is suppressedand thus reliability of the semiconductor device can be improved. Inparticular, when a gate wiring of a bottom gate thin film transistor,which is easily affected by heat load of the following steps or stressof stacked films, has the above structure so as to be less affected bythem, the reliability of the semiconductor device can be improved.

Then, the insulating layer 204 functioning as a gate insulating layer isformed to a thickness of greater than or equal to 50 nm and less than orequal to 800 nm, preferably greater than or equal to 100 nm and lessthan or equal to 600 nm, over the gate wiring 203. In this embodiment,the insulating layer 204 is formed by stacking an insulating layer 204 aand an insulating layer 204 b in this order. A silicon nitride (SiN_(y)(y>0)) layer is formed as the insulating layer 204 a by a sputteringmethod, and a silicon oxide (SiO_(x) (x>0)) layer is formed over theinsulating layer 204 a as the insulating layer 204 b; thus, theinsulating layer 204 with a thickness of 100 nm is formed.

The insulating layer 204 also functions as a protective layer. Byproviding insulating layers including silicon nitride as the insulatinglayer 201 and the insulating layer 204 a which are insulating layerslocated over and under the gate wiring 202 including Cu so that the gatewiring 202 including Cu may be sandwiched between or surrounded by theinsulating layers, diffusion of Cu included in the gate wiring 202 canbe prevented.

Next, the semiconductor layer 205 is formed over the insulating layer204. As an oxide semiconductor film to be the semiconductor layer 205,an In—Ga—Zn—O-based oxide semiconductor film, an In—Sn—Zn—O-based oxidesemiconductor film, an In—Al—Zn—O-based oxide semiconductor film, aSn—Ga—Zn—O-based oxide semiconductor film, an Al—Ga—Zn—O-based oxidesemiconductor film, a Sn—Al—Zn—O-based oxide semiconductor film, anIn—Zn—O-based oxide semiconductor film, a Sn—Zn—O-based oxidesemiconductor film, an Al—Zn—O-based oxide semiconductor film, anIn—O-based oxide semiconductor film, a Sn—O-based oxide semiconductorfilm, or a Zn—O-based oxide semiconductor film is used. In addition, theoxide semiconductor film can be formed by a sputtering method in a raregas (typically argon) atmosphere, an oxygen atmosphere, or a mixedatmosphere of a rare gas (typically argon) and oxygen.

In the case of using a sputtering method, deposition may be performedusing a target including silicon oxide (SiO₂) at greater than or equalto 2 weight % and less than or equal to 10 weight % so that SiO_(x)(x>0) which inhibits crystallization may be included in the oxidesemiconductor film.

Here, deposition is performed using a target for forming an oxidesemiconductor film including In, Ga, and Zn (composition ratio:In₂O₃:Ga₂O₃:ZnO=1:1:1 [mol %], In:Ga:Zn=1:1:0.5 [at. %]) underconditions where the distance between the substrate and the target is100 mm, the pressure is 0.6 Pa, the direct-current (DC) power is 0.5 kW,and the atmosphere is an oxygen atmosphere (of an oxygen flow rate of100%). Note that a pulsed direct-current (DC) power source is preferablyused because powder substances (also referred to as particles or dust)generated during deposition can be reduced and the film thickness can beuniform. In this embodiment, as the oxide semiconductor film, anIn—Ga—Zn—O-based film is formed by a sputtering method with the use of atarget for forming an In—Ga—Zn—O-based oxide semiconductor film.

The filling rate of the target for forming the oxide semiconductor filmis higher than or equal to 90% and lower than or equal to 100%,preferably higher than or equal to 95% and lower than or equal to 99.9%.With the use of the target for forming the oxide semiconductor film witha high filling rate, a dense oxide semiconductor film is formed.

The oxide semiconductor film preferably has a thickness of greater thanor equal to 5 nm and less than or equal to 30 nm. Note that anappropriate thickness differs depending on an oxide semiconductormaterial, and the thickness may be set as appropriate depending on thematerial.

In addition, it is preferable that the oxide semiconductor film besuccessively formed over the insulating layer 204. A multi-chambersputtering apparatus used here is provided with a target of silicon orsilicon oxide (artificial quarts), and the target for forming the oxidesemiconductor film. A deposition chamber provided with the target forforming the oxide semiconductor film is further provided with at least acryopump as an evacuation unit. Note that a turbo molecular pump may beused instead of the cryopump, and a cold trap may be provided so thatmoisture or the like may be adsorbed onto an inlet of the turbomolecular pump.

In the deposition chamber which is evacuated with the cryopump, ahydrogen atom, a compound including a hydrogen atom such as H₂O, acompound including a carbon atom, and the like are removed, whereby theconcentration of impurities included in the oxide semiconductor filmformed in the deposition chamber can be reduced.

The oxide semiconductor film may be formed in a state where thesubstrate is heated. At this time, the substrate temperature is set athigher than or equal to 100° C. and lower than or equal to 600° C.,preferably higher than or equal to 200° C. and lower than or equal to400° C. By forming the oxide semiconductor film in a state where thesubstrate is heated, the concentration of impurities included in theformed oxide semiconductor film can be reduced.

Examples of a sputtering method include an RF sputtering method in whicha high-frequency power source is used as a sputtering power source, a DCsputtering method in which a direct-current power source is used, and apulsed DC sputtering method in which a bias is applied in a pulsedmanner. An RF sputtering method is mainly used in the case of forming aninsulating film, and a DC sputtering method is mainly used in the caseof forming a metal conductive film.

In addition, there is also a multi-source sputtering apparatus in whicha plurality of targets of different materials can be set. With themulti-source sputtering apparatus, films of different materials can beformed to be stacked in the same chamber, or a film can be formed byintroducing plural kinds of materials and electric discharge at the sametime in the same chamber.

In addition, there are a sputtering apparatus provided with a magnetsystem inside the chamber and used for a magnetron sputtering method,and a sputtering apparatus used for an ECR sputtering method in whichplasma generated with the use of microwaves is used without using glowdischarge.

Furthermore, as a deposition method by sputtering, there are also areactive sputtering method in which a target substance and a sputteringgas component are chemically reacted with each other during depositionto form a thin compound film thereof, and a bias sputtering method inwhich voltage is also applied to a substrate during deposition.

Note that before the oxide semiconductor film is formed by a sputteringmethod, reverse sputtering in which an argon gas is introduced andplasma is generated is preferably performed to remove dust attaching toa surface of the insulating layer 204. The reverse sputtering refers toa method in which an RF power source is used for application of voltageto a substrate in an argon atmosphere and plasma is generated in thevicinity of the substrate to modify a surface. Note that instead of anargon atmosphere, a nitrogen atmosphere, a helium atmosphere, an oxygenatmosphere, or the like may be used.

Then, a mask is formed over the oxide semiconductor film by aphotolithography method, an inkjet method, or the like and the oxidesemiconductor film is selectively etched using the mask to provide thesemiconductor layer 205 having an island shape. In this embodiment, theoxide semiconductor film is selectively etched using a resist maskformed by a third photolithography step to be the semiconductor layer205 having an island shape (see FIG. 4C). Here, the semiconductor layer205 is etched to have a tapered edge, whereby disconnection of a wiringdue to a step shape can be prevented. In the etching, organic acid suchas citric acid or oxalic acid can be used for an etchant.

Next, the semiconductor layer 205 is subjected to dehydration ordehydrogenation. The temperature of first heat treatment for dehydrationor dehydrogenation is higher than or equal to 400° C. and lower than750° C. For example, a rapid thermal anneal (RTA) treatment can beperformed at 400° C. to 700° C. for 1 minute to 10 minutes, preferablyat 650° C. for 3 minutes to 6 minutes, approximately. With an RTAmethod, dehydration or dehydrogenation can be performed in a short time;therefore, treatment can be performed even at a temperature higher thanthe strain point of a glass substrate.

As a heat treatment apparatus used for an RTA method, for example, arapid thermal anneal (RTA) apparatus such as a gas rapid thermal anneal(GRTA) apparatus or a lamp rapid thermal anneal (LRTA) apparatus can beused. An LRTA apparatus is an apparatus for heating an object to beprocessed by radiation of light (an electromagnetic wave) emitted from alamp such as a halogen lamp, a metal halide lamp, a xenon arc lamp, acarbon arc lamp, a high pressure sodium lamp, or a high pressure mercurylamp. A GRTA apparatus is an apparatus for heating an object to beprocessed by thermal radiation of light emitted from the above lamp andby conduction of heat from a gas heated by light emitted from a lamp. Asthe gas, an inert gas which does not react with an object to beprocessed by heat treatment, such as nitrogen or a rare gas like argonis used. An LRTA apparatus or a GRTA apparatus may be provided with notonly a lamp but also a device for heating an object to be processed byheat conduction or heat radiation from a heater such as a resistanceheater.

In the case of performing the first heat treatment with the use of anelectric furnace or the like, the heat treatment may be performed for 1hour or shorter when the temperature thereof is higher than or equal to425° C., although the heat treatment is performed for longer than 1 hourwhen the temperature is lower than 425° C. In the first heat treatment,the substrate is introduced into an electric furnace, which is one ofheat treatment apparatuses, and heat treatment is performed on the oxidesemiconductor layer in a nitrogen atmosphere. Then, the same furnace isused from the heating temperature T at which the oxide semiconductorlayer is subjected to dehydration or dehydrogenation to a temperaturesufficient to prevent water from entering again; specifically, slowcooling is performed in a nitrogen atmosphere until the temperaturedrops by 100° C. or more from the heating temperature T. Furthermore,without limitation to a nitrogen atmosphere, dehydration ordehydrogenation can be performed in an atmosphere of a rare gas (such ashelium, neon, or argon). The oxide semiconductor layer is not exposed toair, which prevents water and hydrogen from entering the oxidesemiconductor layer again; thus, the oxide semiconductor layer having alow concentration of hydrogen is obtained.

In the first heat treatment, it is preferable that water, hydrogen, andthe like be not included in nitrogen or a rare gas such as helium, neon,or argon. It is preferable that the purity of nitrogen or a rare gassuch as helium, neon, or argon which is introduced into a heat treatmentapparatus be 6N (99.9999%) or higher, preferably 7N (99.99999%) orhigher (that is, the impurity concentration is I ppm or lower,preferably 0.1 ppm or lower).

At this time, in a superficial portion of the semiconductor layer 205, aneedle-like microcrystalline layer which is c-axis-orientated in adirection perpendicular to a surface of the layer may be formed. Anoxide semiconductor layer having such a structure has a dense crystalregion including microcrystal of a needle-like crystal group in itssuperficial portion; therefore, with the use of the oxide semiconductorlayer having such a structure, deterioration of electric characteristicsdue to change to an n-type, which is caused by entry of moisture to thesuperficial portion or elimination of oxygen from the superficialportion, can be prevented. Further, since the superficial portion of theoxide semiconductor layer is on the back channel side, preventing theoxide semiconductor layer from being changed to an n-type is alsoeffective for suppression of generation of a parasitic channel.

In addition, when the temperature is lowered from the heatingtemperature Tat which dehydration or dehydrogenation is performed, it isimportant to prevent the dehydrated or dehydrogenated oxidesemiconductor layer from being exposed to air by continuously using afurnace in which dehydration or dehydrogenation is performed, so thatwater or hydrogen is prevented from entering the oxide semiconductorlayer. When a transistor is formed using an i-type (high-resistance)oxide semiconductor layer obtained through dehydration ordehydrogenation, the threshold voltage of the thin film transistor canbe positive, so that a switching element having a so-called normally-offproperty can be realized. It is desirable for a display device that achannel be formed with gate threshold voltage that is a positive valueand as close to 0 V as possible.

A gas atmosphere in which the heating temperature T is lowered may beswitched to a gas atmosphere different from that in which thetemperature is raised to the heating temperature T. For example, coolingmay be performed in the furnace where dehydration or dehydrogenation isperformed while the furnace is filled with a high-purity oxygen gas, ahigh-purity N₂O gas, or ultra-dry air (having a dew point of −40° C. orlower, preferably −60 ° C. or lower) without exposure to the air.

By performing the first heat treatment in the above manner, impurities(such as H₂O, H, or OH) included in the semiconductor layer 205 formedusing the oxide semiconductor film can be reduced and the oxidesemiconductor film can be highly purified. Accordingly, a highlyreliable thin film transistor having favorable electric characteristicscan be formed.

The first heat treatment for the oxide semiconductor layer can beperformed before the oxide semiconductor film is processed into theisland-like oxide semiconductor layer. In that case, after the firstheat treatment, the substrate is taken out of the heating apparatus andthe third photolithography step is performed.

Then, although not illustrated in FIGS. 2A to 2C, FIGS. 3A and 3B, FIGS.4A to 4D, and FIGS. 5A to 5C, an opening (also referred to as a contacthole) for connecting the gate wiring 203 to the electrode 207 a or theelectrode 207 b which will be described later is formed in theinsulating layer 204. The contact hole is formed by forming a mask overthe insulating layer 204 by a photolithography method, an inkjet method,or the like, and then selectively etching the insulating layer 204 usingthe mask. Here, the insulating layer 204 is selectively etched using aresist mask formed by a fourth photolithography step, whereby a contacthole is formed.

Note that the contact hole may be formed by the fourth photolithographystep after the formation of the insulating layer 204 and before theformation of the semiconductor layer 205.

Then, a conductive film of W, Ta, Mo, Ti, Cr, or the like or aconductive film of an alloy or the like including a combination of anyof these elements is formed to a thickness of greater than or equal to100 nm and less than or equal to 500 nm, preferably greater than orequal to 200 nm and less than or equal to 300 nm by a sputtering method,a vacuum evaporation method, or the like over the semiconductor layer205. The conductive film is not limited to a single-layer film includingany of the above elements and can be a stacked-layer film of two or morelayers. Note that the conductive film preferably has enough heatresistance to withstand at least second heat treatment performed later.

Further, a transparent conductive oxide including any of indium, tin, orzinc may be used for the conductive film. For example, indium oxide(In₂O₃) or an indium oxide-tin oxide alloy (In₂O₃—SnO₂, abbreviated toITO) is preferably used. Alternatively, a transparent conductive oxideto which an insulating oxide such as silicon oxide is added may be used.When a transparent conductive oxide is used for the conductive film, theaperture ratio of the display device can be improved.

For the conductive film which is in contact with the semiconductor layer205 formed using the oxide semiconductor film, a material includingmetal with high oxygen affinity is preferably used.

As the metal with high oxygen affinity, one or more materials selectedfrom titanium (Ti), manganese (Mn), magnesium (Mg), zirconium (Zr),beryllium (Be), and thorium (Th) are preferable. In this embodiment, atitanium film is used.

When the oxide semiconductor layer and the conductive film with highoxygen affinity are formed in contact with each other, the carrierdensity in the vicinity of the interface is increased and alow-resistance region is formed, whereby the contact resistance betweenthe oxide semiconductor layer and the conductive film can be reduced.This is because the conductive film with high oxygen affinity extractsoxygen from the oxide semiconductor layer and thus either or both of alayer which includes metal in the oxide semiconductor layer in excess(such a layer is referred to as a composite layer) and an oxidizedconductive film are formed in the interface between the oxidesemiconductor layer and the conductive film. For example, in a structurewhere an In—Ga—Zn—O-based oxide semiconductor layer is in contact with atitanium film, an indium-excess layer and a titanium oxide layer areformed in the vicinity of the interface where the oxide semiconductorlayer is in contact with the titanium film in some cases. In othercases, one of the indium-excess layer and the titanium oxide layer isformed in the vicinity of the interface where the oxide semiconductorlayer is in contact with the titanium film. The indium-excess layerwhich is an oxygen-deficient In—Ga—Zn—O-based oxide semiconductor layerhas high electric conductivity; therefore, the contact resistancebetween the oxide semiconductor layer and the conductive film can bereduced.

Note that a titanium oxide film having conductivity may be used as theconductive film which is in contact with the oxide semiconductor layer.In that case, in the structure where the In—Ga—Zn—O-based oxidesemiconductor layer is in contact with the titanium oxide film, anindium-excess layer might be formed in the vicinity of the interfacewhere the oxide semiconductor layer is in contact with the titaniumoxide film.

Note that a phenomenon in which, in a thin film transistor using theabove In—Ga—Zn—O-based oxide semiconductor layer as an active layer ofthe thin film transistor, a layer which includes indium at a higherconcentration than the other region (an In-rich layer) and a titaniumoxide (TiO_(x)) film are formed in the vicinity of the interface betweenthe In—Ga—Zn—O-based oxide semiconductor layer and metal layers used fora source electrode and a drain electrode will be described in detail inEmbodiment 14.

As a formation method of the conductive film, an arc discharge ionplating method or a spray method may be employed. Alternatively, theconductive film may be formed by discharging a conductive nanopaste ofsilver, gold, copper, or the like by a screen printing method, an inkjetmethod, or the like and baking the nanopaste.

Then, a mask is formed over the conductive film by a photolithographymethod, an inkjet method, or the like and the conductive film is etchedusing the mask; thus, the electrode 207 a serving as a source electrodeand the electrode 207 b serving as the drain electrode can be formed. Inthis embodiment, a 200-nm-thick Ti film is formed by a sputtering methodas the conductive film, and then the conductive film is selectivelyetched by a wet etching method or a dry etching method using a resistmask formed by a fifth photolithography step, whereby the electrodes 207a and 207 b are formed.

By the fifth photolithography step, only a portion of the conductivefilm which is on and in contact with the oxide semiconductor layer isremoved. When an ammonia peroxide mixture (hydrogen peroxide at 31weight %:ammonia at 28 weight %:water=5:2:2 in a weight ratio), or thelike is used as an alkaline etchant so that only the portion of theconductive film which is on and in contact with the oxide semiconductorlayer is removed, it is possible to remove the metal conductive filmselectively and to leave the oxide semiconductor layer including anIn—Ga—Zn—O-based oxide semiconductor.

Further, an exposed region of the oxide semiconductor layer is etched bythe fifth photolithography step in some cases, depending on the etchingcondition. In that case, the thickness of the oxide semiconductor layerin a region between the source electrode layer and the drain electrodelayer (a region between reference numerals 207 a and 207 b) is smallerthan the thickness of the oxide semiconductor layer in a regionoverlapping with the source electrode layer over the gate wiring 203 orthe thickness of the oxide semiconductor layer in a region overlappingwith the drain electrode layer over the gate wiring 203 (see FIG. 4D).

Next, the insulating layer 208 is formed over the insulating layer 204and the semiconductor layer 205. The insulating layer 208 does notinclude impurities such as moisture, hydrogen ions, or OFF and is formedusing an inorganic insulating film which prevents entry of these fromthe outside. In addition, the insulating layer 208 is formed using aninorganic insulating film which suppresses migration of a layerincluding Cu which is used as a source wiring formed in a subsequentstep. In this embodiment, the insulating layer 208 is formed by stackingan insulating layer 208 a and an insulating layer 208 b in this order.

An oxide insulating film is used for the insulating layer 208 a which isin contact with the semiconductor layer 205. The insulating layer 208 acan be formed to a thickness of at least 1 nm by a method with whichimpurities such as water or hydrogen are not mixed into the oxideinsulating film, such as a sputtering method, as appropriate. Typically,a single layer or a stacked layer of any of a silicon oxide film, asilicon nitride oxide film, an aluminum oxide film, an aluminumoxynitride film, and the like is used for the formation.

The substrate temperature in the formation of the insulating layer 208 amay be higher than or equal to room temperature and lower than or equalto 300° C., and is 100° C. in this embodiment. The silicon oxide filmcan be formed by a sputtering method in a rare gas (typically argon)atmosphere, an oxygen atmosphere, or a mixed atmosphere of a rare gas(typically argon) and oxygen. Note that an oxide insulating film formedby a sputtering method is distinctively dense and even a single layer ofthe oxide insulating film can be used as a protective film forsuppressing a phenomenon in which impurities are diffused into a layerin contact therewith. In addition, a target doped with phosphorus (P) orboron (B) can be used so that phosphorus (P) or boron (B) is added tothe oxide insulating film.

As a target, a silicon oxide target or a silicon target can be used, anda silicon target is particularly preferable. A silicon oxide film formedby a sputtering method in an atmosphere of oxygen and a rare gas withthe use of a silicon target includes a large number of dangling bonds ofsilicon atoms or oxygen atoms.

Since the insulating layer 208 a includes many dangling bonds,impurities included in the semiconductor layer 205 are more likely todiffuse into the insulating layer 208 a through the interface where thesemiconductor layer 205 is in contact with the insulating layer 208 a.Specifically, a hydrogen atom, a compound including a hydrogen atom suchas H₂O, a compound including a carbon atom, or the like in thesemiconductor layer 205 is likely to diffuse and move into theinsulating layer 208 a and fixed in the insulating layer 208 a.

In this embodiment, the insulating layer 208 a is deposited by a pulsedDC sputtering method using a sputtering gas with a purity of 6N and acolumnar polycrystalline silicon target (the resistivity is 0.01 Ωcm)doped with boron under conditions where the distance between substrateand target (T-S distance) is 89 mm, the pressure is 0.4 Pa, thedirect-current (DC) power is 6 kW, and the atmosphere is an oxygenatmosphere (of an oxygen flow rate of 100%). The film thickness thereofis 300 nm.

At this stage, a region where the semiconductor layer 205 is in contactwith the insulating layer 208 a is formed. A region of the semiconductorlayer 205, which overlaps with the gate electrode 203 and is sandwichedbetween and in contact with the insulating layer 204 and the insulatinglayer 208 a, serves as a channel formation region. In addition, theinsulating layer 208 a functions as a channel protective layer.

An insulating film including nitrogen is used for the insulating layer208 b which is formed over the insulating layer 208 a. The insulatinglayer 208 b is formed to a thickness of at least 1 nm by a method withwhich impurities such as water or hydrogen are not mixed into theinsulating film, such as a sputtering method, as appropriate. Typically,a silicon nitride film, a silicon nitride oxide film, an aluminumnitride film, or the like is used. In this embodiment, a silicon nitridefilm is formed as the protective insulating layer 208 b by an RFsputtering method.

In this embodiment, a 400-nm-thick silicon nitride film is formed as theinsulating layer 208 b.

Next, second heat treatment (preferably at higher than or equal to 200°C. and lower than or equal to 400° C., for example, at higher than orequal to 250° C. and lower than or equal to 350° C.) is performed in aninert gas atmosphere or in a nitrogen gas atmosphere. Note that thesecond heat treatment is preferably performed at a lower temperaturethan the first heat treatment.

For example, the second heat treatment is performed in a nitrogenatmosphere at 250° C. for 1 hour. In the second heat treatment, heatingis performed in a state where part of the semiconductor layer 205 is incontact with the insulating layer 208 a and other part of thesemiconductor layer 205 is in contact with the electrode 207 a and theelectrode 207 b.

When the second heat treatment is performed in a state where thesemiconductor layer 205 is in contact with the insulating layer 208 a,the region of the semiconductor layer 205 in contact with the insulatinglayer 208 a is brought into an oxygen-excess state. As a result, thesemiconductor layer 205 is changed into an i-type (high-resistance)oxide semiconductor layer in the depth direction from the region incontact with the insulating layer 208 a.

Specifically, in the semiconductor layer 205, an i-type(high-resistance) region is formed from the interface where thesemiconductor layer 205 is in contact with the insulating layer 208 a tothe insulating layer 204.

Since the i-type (high-resistance) oxide semiconductor layer is formedin the channel formation region of the thin film transistor manufacturedin this embodiment, the threshold voltage is a positive value and thethin film transistor behaves as an enhancement-type thin filmtransistor.

When the second heat treatment is performed on the region where thesemiconductor layer 205 is in contact with the electrode 207 a and theelectrode 207 b which are formed using the metal conductive film withhigh oxygen affinity, oxygen easily moves to the metal conductive filmside and the oxide semiconductor layer in the region in contact with themetal conductive film with high oxygen affinity is changed into ann-type. As an example of metal with high oxygen affinity, Ti can begiven.

By the second heat treatment, impurities (such as H₂O, H, or OH)included in the semiconductor layer 205 formed using the oxidesemiconductor can be reduced and the oxide semiconductor film can behighly purified. Accordingly, a highly reliable thin film transistorhaving favorable electric characteristics can be formed.

The timing of the second heat treatment is not limited to immediatelyafter the formation of the insulating layer 208 as long as it is afterthe formation of the insulating layer 208.

Then, the opening 216 (also referred to as a contact hole) forconnecting the electrode 207 a to the source wiring 209 is formed in theinsulating layer 208. The contact hole is formed by forming a mask overthe insulating layer 208 by a photolithography method, an inkjet method,or the like, and then selectively etching the insulating layer 208 usingthe mask. In this embodiment, the insulating layer 208 is selectivelyetched using a resist mask formed by a sixth photolithography step,whereby a contact hole is formed.

Then, a conductive film for the formation of the source wiring 209 isformed using an element such as W, Ta, Mo, Ti, or Cr which has a highermelting point than Cu or an alloy or the like including a combination ofany of these elements by a sputtering method, a vacuum evaporationmethod, or the like with a thickness of greater than or equal to 5 nmand less than or equal to 200 nm, preferably greater than or equal to 10nm and less than or equal to 100 nm. Alternatively, a film of tantalumnitride, titanium nitride, or the like may be formed by a reactivesputtering method.

Then, a conductive film including Cu is formed to a thickness of greaterthan or equal to 100 nm and less than or equal to 500 nm, preferablygreater than or equal to 200 nm and less than or equal to 300 nm by asputtering method, a vacuum evaporation method, or a plating method. Amask is formed over the conductive film by a photolithography method, aninkjet method, or the like and the conductive film including Cu and theconductive film for the formation of the source wiring 209 are etchedusing the mask; thus the source wiring 209 and the source wiring 210including Cu can be formed.

In this embodiment, a 50-nm-thick titanium nitride film is used as theconductive film for the formation of the source wiring 209 and a250-nm-thick Cu film is used as the conductive film for the formation ofthe source wiring 210, and the conductive films are selectively etchedusing a resist mask formed by a seventh photolithography step, wherebythe source wiring 209 and the source wiring 210 are formed (see FIG.5A).

The source wiring 209 also serves as a barrier layer for preventingdiffusion of Cu. By forming a source wiring with a stacked-layerstructure having a layer including Cu and a layer including an elementwhich has a higher melting point than Cu, migration of the layerincluding Cu is suppressed; thus, the reliability of the semiconductordevice can be improved. Further, a structure is also acceptable in whichanother layer including an element which has a higher melting point thanCu is formed over the source wiring 210 so that the layer including Cuis sandwiched between the layers including an element which has a highermelting point than Cu. Note that the source wiring may be a single layerincluding Cu, depending on the usage environment or the usage conditionof the semiconductor device. The layer including Cu can be formed by amethod similar to the method for forming the gate wiring 202 to have astructure similar to the structure of the gate wiring 202.

Then, the insulating layer 211 is formed to a thickness of greater thanor equal to 50 nm and less than or equal to 300 nm, preferably greaterthan or equal to 100 nm and less than or equal to 200 nm. The insulatinglayer 211 can be formed by a method similar to the method for formingthe insulating layer 201. The insulating layer 211 also serves as apassivation layer which prevents an influence of contaminationsubstances from the outside on thin film transistors. In thisembodiment, a 10-nm-thick silicon nitride film is formed as theinsulating layer 211. The insulating layer 211 also serves as aprotective layer. By providing insulating layers including siliconnitride as the insulating layers over and under the source wiring 210including Cu so that the source wiring 210 including Cu may besandwiched between or surrounded by the insulating layers, diffusion ofCu included in the source wiring 210 can be prevented (see FIG. 5B).

Then, a contact hole for connecting the electrode 207 b to the electrode212 serving as a pixel electrode is formed in the insulating layer 211and the insulating layer 208. The contact hole is formed by forming amask over the insulating layer 211 by a photolithography method, aninkjet method, or the like, and then selectively etching the insulatinglayers 211 and 208 using the mask. In this embodiment, the insulatinglayers 211 and 208 are selectively etched using a resist mask formed byan eighth photolithography step, whereby a contact hole (the opening217) is formed.

Then, a light-transmitting conductive film is formed to a thickness ofgreater than or equal to 30 nm and less than or equal to 200 nm,preferably greater than or equal to 50 nm and less than or equal to 100nm by a sputtering method, a vacuum evaporation method, or the like. Amask is formed over the conductive film by a photolithography method, aninkjet method, or the like, and then the conductive film is etched usingthe mask; thus, the electrode 212 which serves as a pixel electrode isformed.

For the light-transmitting conductive film, a light-transmittingconductive material such as indium oxide including tungsten oxide,indium zinc oxide including tungsten oxide, indium oxide includingtitanium oxide, indium tin oxide including titanium oxide, indium tinoxide (hereinafter referred to as ITO), indium zinc oxide (hereinafter,also referred to as IZO), or indium tin oxide to which silicon oxide isadded can be used.

Alternatively, the light-transmitting conductive film can be formedusing a conductive composition including a conductive high molecule(also referred to as a conductive polymer). The pixel electrode formedusing a conductive composition preferably has a sheet resistance of10000 Ω/square or less and a light transmittance of 70% or more at awavelength of 550 nm. Further, the resistivity of the conductive highmolecule included in the conductive composition is preferably 0.1 Ω·cmor less.

In this embodiment, an 80-nm-thick ITO film is formed as thelight-transmitting conductive film, and then the light-transmittingconductive film is selectively etched using a resist mask formed by aninth photolithography step, whereby the electrode 212 which serves as apixel electrode is formed (see FIG. 5C).

In this embodiment, in the case where the insulating layer 204 and thesemiconductor layer 205 are not successively formed, the insulatinglayer 204 is preferably subjected to heat treatment (at higher than orequal to 400° C. and lower than the strain point of the substrate) in anatmosphere of an inert gas (such as nitrogen, helium, neon, or argon).By this heat treatment, impurities such as hydrogen and water includedin the insulating layer 204 can be removed before the formation of theoxide semiconductor film.

A silicon oxide layer, a silicon nitride layer, a silicon oxynitridelayer, or a silicon nitride oxide layer may be formed by a plasma CVDmethod instead of a sputtering method. For example, a silicon oxynitridelayer may be formed by a plasma CVD method using SiH₄, oxygen, andnitrogen as a deposition gas. The thickness of the insulating layer 204is greater than or equal to 100 nm and less than or equal to 500 nm. Inthe case of a stacked-layer structure, a first gate insulating layerwith a thickness of greater than or equal to 50 nm and less than orequal to 200 nm and a second gate insulating layer with a thickness ofgreater than or equal to 5 nm and less than or equal to 300 nm arestacked in this order. When the film formed by a plasma CVD method orthe like includes an impurity such as hydrogen or water, the above heattreatment is preferably performed so that the impurity is removed, andthen the oxide semiconductor film is formed.

Although the gate insulating layer is selectively etched for formationof the contact hole which reaches a gate wiring layer (not illustrated)by the fourth photolithography step in this embodiment, an embodiment ofthe present invention is not limited to this method. For example, afterthe insulating layer 204 is formed, a resist mask is formed over theinsulating layer 204 and the contact hole reaching the gate wiring layermay be formed.

Note that a photolithography step using a multi-tone mask can also beapplied to this embodiment. A photolithography step using a multi-tonemask will be described with reference to FIGS. 6A to 6D and FIGS. 7A to7E.

A multi-tone mask is a photomask which can perform three levels of lightexposure to obtain an exposed portion, a half-exposed portion, and anunexposed portion. Light has a plurality of intensities after passingthrough a multi-tone mask. One-time light exposure and developmentprocess with a multi-tone mask can form a resist mask with regions ofplural thicknesses (typically, two kinds of thicknesses). Accordingly,by using a multi-tone mask, the number of photomasks can be reduced.

As typical examples of the multi-tone mask, a gray-tone mask 801 aillustrated in FIG. 6A and a half-tone mask 801 b illustrated in FIG. 6Care given.

As illustrated in FIG. 6A, the gray-tone mask 801 a includes alight-transmitting substrate 802, and a light-blocking portion 803 and adiffraction grating 804 which are formed on the light-transmittingsubstrate 802. The light transmittance of the light-blocking portion 803is 0%. On the other hand, the diffraction grating 804 has alight-transmitting portion in a slit form, a dot form, a mesh form, orthe like with intervals which are equal to or less than the resolutionlimit of light used for the light exposure; thus, the lighttransmittance can be controlled. The diffraction grating 804 can haveregularly-arranged slits, dots, or meshes, or irregularly-arrangedslits, dots, or meshes.

As the light-transmitting substrate 802, a light-transmitting substratesuch as a quartz substrate can be used. The light-blocking portion 803and the diffraction grating 804 can be formed using a light-blockingmaterial which absorbs light, such as chromium or chromium oxide.

When the gray-tone mask 801 a is irradiated with light for exposure, alight transmittance 805 of the light-blocking portion 803 is 0% and thelight transmittance 805 of a region where neither the light-blockingportion 803 nor the diffraction grating 804 is provided is 100% as shownin FIG. 6B. The light transmittance of the diffraction grating 804 canbe controlled in the range of 10% to 70%. The light transmittance of thediffraction grating 804 can be controlled by adjusting the interval andpitch of slits, dots, or meshes of the diffraction grating.

As shown in FIG. 6C, the half-tone mask 801 b includes thelight-transmitting substrate 802, and a semi-light-transmitting portion807 and a light-blocking portion 806 which are formed on thelight-transmitting substrate 802. The semi-light-transmitting portion807 can be formed using MoSiN, MoSi, MoSiO, MoSiON, CrSi, or the like.The light-blocking portion 806 can be formed using a light-blockingmaterial which absorbs light, such as chromium or chromium oxide.

When the half-tone mask 801 b is irradiated with light for exposure, alight transmittance 808 of the light-blocking portion 806 is 0% and thelight transmittance 808 of a region where neither the light-blockingportion 806 nor the semi-light-transmitting portion 807 is provided is100% as shown in FIG. 6D. The light transmittance of thesemi-light-transmitting portion 807 can be controlled in the range of10% to 70%. The light transmittance of the semi-light-transmittingportion 807 can be controlled by a material of thesemi-light-transmitting portion 807.

Next, with reference to FIGS. 7A to 7E, an example in which the thirdphotolithography step and the fifth photolithography step are replacedwith one photolithography step using a multi-tone mask will bedescribed.

By the third photolithography step of this embodiment, the semiconductorlayer 205 is formed over the insulating layer 204, and is then processedinto an island-like semiconductor layer. In this example, however, thesemiconductor layer 205 is not processed into an island-likesemiconductor layer and an electrode layer 207 is formed over thesemiconductor layer 205 successively to the formation thereof. Then, aresist mask 231 having a depressed portion and a projected portion isformed over the electrode layer 207 using a multi-tone mask (see FIG.7A).

The resist mask 231 can also be referred to as a resist mask including aplurality of regions (here, two regions) having different thicknesses.In the resist mask 231, a thick region is called a projected portion ofthe resist mask 231, and a thin region is called a depressed portion ofthe resist mask 231.

In the resist mask 231, a projected portion is formed in a region wherethe electrode 207 a serving as a source electrode and the electrode 207b serving as a drain electrode which are formed later are formed and adepressed portion is formed in a region between the electrode 207 a andthe electrode 207 b.

Then, the electrode layer 207 and the semiconductor layer 205 areselectively etched at the same time using the resist mask 231 to formthe semiconductor layer 205 having an island shape (see FIG. 7B).

Then, the resist mask 231 is reduced (downsized) to form resist masks231 a and 231 b. In order to reduce (downsize) the resist mask, oxygenplasma ashing or the like may be performed. When the resist mask isreduced (downsized), part of the electrode layer 207 which is sandwichedbetween the resist masks 231 a and 231 b is exposed (see FIG. 7C).

Then, part of the electrode layer 207 which is sandwiched between theresist masks 231 a and 231 b are selectively etched using the resistmasks 231 a and 231 b to provide the electrode 207 a and the electrode207 b. Note that the semiconductor layer 205 is partly etched at thistime to be a semiconductor layer having a groove (a depressed portion)in some cases. In addition, edges of the semiconductor layer 205 extendbeyond edges of the electrode 207 a and the electrode 207 b (see FIG.7D). Then, the resist masks 231 a and 231 b are removed (see FIG. 7E).

By using the multi-tone mask, a plurality of photolithography steps canbe replaced with one photolithography step. Accordingly, theproductivity of a semiconductor device can be improved.

In this embodiment, a thin film transistor 252 may be formed to have thefollowing structure. At the time of forming the contact hole for aconnection between the electrode 207 a and the source wiring 209 by thesixth photolithography step, openings are formed in the insulating layer204 b, the insulating layer 208 a, and the insulating layer 208 b so asto surround the thin film transistor, and the insulating layer 211 is incontact with the insulating layer 204 a through the openings. An exampleof a cross-sectional view of the thin film transistor 252 is illustratedin FIG. 38.

The thin film transistor 252 illustrated in FIG. 38 is a channel-etchedthin film transistor like the thin film transistor 250 and includes theinsulating layer 201 provided over the substrate 200, the gate wiring202 provided over the insulating layer 201, the gate wiring 203 providedover the gate wiring 202, the insulating layer 204 a provided over thegate wiring 203, the insulating layer 204 b provided over the insulatinglayer 204 a, the semiconductor layer 205 provided over the insulatinglayer 204 b, the pair of electrodes 207 a and 207 b provided over thesemiconductor layer 205, the insulating layer 208 a provided over theelectrode 207 a, the electrode 207 b, and the semiconductor layer 205,the insulating layer 208 b provided over the insulating layer 208 a, thesource wiring 209 which is in contact with the electrode 207 a throughan opening provided in the insulating layer 208 a and the insulatinglayer 208 b, the source wiring 210 provided over the source wiring 209,the insulating layer 211 provided over the source wiring 210, and theelectrode 212 which is in contact with the electrode 207 b through anopening provided in the insulating layer 211, the insulating layer 208a, and the insulating layer 208 b. Note that, although the gate wiring202 is not illustrated in FIG. 38, the gate wiring 202 of the thin filmtransistor 252 is also provided in a manner similar to that of the gatewiring 202 of the thin film transistor 250 illustrated in FIGS. 2A to2C.

Here, in the insulating layer 204 b, the insulating layer 208 a, and theinsulating layer 208 b, an opening is selectively formed by the sixthphotolithography step so that the insulating layer 204 a is exposed, andthe insulating layer 211 covers a top surface and a side surface of theinsulating layer 208 b and side surfaces of the insulating layer 208 aand the insulating layer 204 b and is in contact with the insulatinglayer 204 a through the opening.

Here, the insulating layer 211 and the insulating layer 204 a are formedusing insulating films including nitrogen and are inorganic insulatingfilms which do not include an impurity such as moisture, a hydrogen ion,or OH⁻ and block entry of these from the outside.

Thus, with the structure illustrated in FIG. 38, the thin filmtransistor 252 can be hermetically sealed with the insulating layer 211and the insulating layer 204 a which are formed using the insulatingfilms including nitrogen; consequently, entry of moisture from theoutside can be prevented in a manufacturing process after the formationof the insulating layer 211. Further, even after a device is completedas a display device such as a liquid crystal display device, entry ofmoisture from the outside can be prevented in the long term; therefore,long-term reliability of the device can be improved.

In this embodiment, the structure in which one thin film transistor issurrounded by insulating films including nitrogen is described; however,an embodiment of the present invention is not particularly limitedthereto. A plurality of thin film transistors may be surrounded byinsulating films including nitrogen, or a plurality of thin filmtransistors in a pixel portion may be collectively surrounded byinsulating films including nitrogen. A region where the insulating layer211 and the insulating layer 204 a are in contact with each other may beformed so that at least the periphery of the pixel portion of the activematrix substrate is surrounded.

Further, a light-transmitting thin film transistor can be provided.Here, the case where, in the thin film transistor provided in the pixelportion of the display device described in Embodiments 1 and 2, thelight-transmitting oxide semiconductor layer 205 is used andlight-transmitting conductive films are applied to the gate wiring 203,the electrode 207 a, and the electrode 207 b is described.

When the thin film transistor included in the pixel structureillustrated in FIG. 2B is a light-transmitting thin film transistor, alight-transmitting thin film transistor including the insulating layer201 provided over the substrate 200, the gate wiring 202 provided overthe insulating layer 201, the light-transmitting gate wiring 203provided over the gate wiring 202, the insulating layer 204 providedover the gate wiring 203, the semiconductor layer 205 provided over theinsulating layer 204, the pair of light-transmitting electrodes 207 aand 207 b provided over the semiconductor layer 205, the insulatinglayer 208 provided over the electrode 207 a, the electrode 207 b, andthe semiconductor layer 205, the source wiring 209 which is in contactwith the electrode 207 a through an opening provided in the insulatinglayer 208, the source wiring 210 provided over the source wiring 209,the insulating layer 211 provided over the source wiring 210, and theelectrode 212 which is in contact with the electrode 207 b through anopening provided in the insulating layer 211 and the insulating layer208 can be provided.

Alternatively, a bottom gate thin film transistor including a channelprotective layer, which is illustrated as an example in FIG. 3, may be alight-transmitting thin film transistor. Specifically, alight-transmitting thin film transistor including the insulating layer201 provided over the substrate 200, the gate wiring 202 provided overthe insulating layer 201, the light-transmitting gate wiring 203provided over the gate wiring 202, the insulating layer 204 providedover the light-transmitting gate wiring 203, the semiconductor layer 205provided over the insulating layer 204, the channel protective layer 225provided over the semiconductor layer 205, the pair oflight-transmitting electrodes 207 a and 207 b provided over the channelprotective layer 225, the insulating layer 208 provided over theelectrode 207 a, the electrode 207 b, and the semiconductor layer 205,the source wiring 209 which is in contact with the electrode 207 athrough an opening provided in the insulating layer 208, the sourcewiring 210 provided over the source wiring 209, the insulating layer 211provided over the source wiring 210, and the electrode 212 which is incontact with the electrode 207 b through an opening provided in theinsulating layer 211 and the insulating layer 208 can be provided.

Most of the oxide semiconductors that can be applied to the oxidesemiconductor layer 205 described in Embodiment 2 transmits visiblelight. A film including a light-transmitting conductive material, forexample, indium oxide including tungsten oxide, indium zinc oxideincluding tungsten oxide, indium oxide including titanium oxide, indiumtin oxide including titanium oxide, indium tin oxide (hereinafterreferred to as ITO), indium zinc oxide, indium tin oxide to whichsilicon oxide is added, an In—Sn—Zn—O-based oxide semiconductor, anIn—Al—Zn—O-based oxide semiconductor, a Sn—Ga—Zn—O-based oxidesemiconductor, an Al—Ga—Zn—O-based oxide semiconductor, aSn—Al—Zn—O-based oxide semiconductor, a Sn—Zn—O-based oxidesemiconductor, an Al—Zn—O-based oxide semiconductor, an In—O-based oxidesemiconductor, a Sn—O-based oxide semiconductor, a Zn—O-based oxidesemiconductor, or the like can be formed by a sputtering method or thelike and applied to the gate wiring 203, the electrode 207 a, and theelectrode 207 b.

Since the thin film transistor where the light-transmitting oxidesemiconductor layer 205 is used and light-transmitting conductive filmsare applied to the gate wiring 203, the electrode 207 a, and theelectrode 207 b has a light-transmitting property, the aperture ratio inthe pixel portion is not reduced.

Note that a light-transmitting conductive oxide functions as an n⁺ layerin a region in contact with the oxide semiconductor layer; therefore,the thin film transistor can have low contact resistance and parasiticresistance.

Through the above process, a semiconductor device typified by a displaydevice having high display quality, in which increase in wiringresistance is suppressed, can be provided. Moreover, a highly reliablesemiconductor device can be provided in which insulating layersincluding silicon nitride are formed as insulating layers over and undera conductive layer including Cu so that the conductive layer includingCu may be sandwiched between or surrounded by the insulating layers,whereby diffusion of Cu included in the conductive layer is prevented.

Further, by heat treatment for dehydration or dehydrogenation,impurities (such as H₂O, H, or OH) included in the oxide semiconductorlayer can be reduced and the oxide semiconductor layer can be highlypurified. As described above, by suppressing the concentration ofimpurities in the oxide semiconductor layer, a highly reliable thin filmtransistor having favorable electric characteristics can be formed.

When an oxide semiconductor layer which is formed by the methoddescribed in this embodiment as an example and whose impurityconcentration is suppressed is used, a highly reliable semiconductorelement can be provided. Specifically, a thin film transistor includingan oxide semiconductor, whose threshold voltage is controlled, can beprovided. Moreover, a thin film transistor including an oxidesemiconductor, which has high operation speed and sufficient reliabilityand can be manufactured through a relatively simple process, can beprovided.

Furthermore, according to this embodiment, a method for manufacturing athin film transistor including an oxide semiconductor, whose thresholdvoltage is controlled and which has high operation speed and sufficientreliability and can be manufactured through a relatively simple process,can be provided.

Note that this embodiment can be combined with any of the otherembodiments in this specification as appropriate.

Embodiment 3

In this embodiment, an example of a structure of a thin film transistorused for the gate driver circuit 91 or the source driver circuit 92 ofthe display device 30 which is described in Embodiment 1 with referenceto FIGS. 1A and 1B will be described.

A driver circuit for driving a pixel portion is formed using an invertercircuit, a capacitor, a resistor, and the like. In this embodiment, astructure of an inverter circuit which includes two thin filmtransistors as thin film transistors used in the driver circuit isdescribed. When the inverter circuit is formed using two n-channel TFTsin combination, there are an inverter circuit having two enhancementtype TFTs (hereinafter referred to as an EEMOS circuit) and an invertercircuit having a combination of an enhancement type transistor and adepletion type transistor (hereinafter referred to as an EDMOS circuit).Note that an n-channel TFT whose threshold voltage is positive isreferred to as an enhancement type transistor, and an n-channel TFTwhose threshold voltage is negative is referred to as a depletion typetransistor, throughout this specification.

FIG. 8A illustrates a cross-sectional structure of the inverter circuitof the driver circuit. Further, FIG. 8C is a plan view of the invertercircuit of the driver circuit. A cross section taken along chain lineZ1-Z2 in FIG. 8C corresponds to FIG. 8A. Note that a first thin filmtransistor 430 a and a second thin film transistor 430 b illustrated inFIGS. 8A to 8C are inverted staggered thin film transistors having abottom gate structure.

In the first thin film transistor 430 a illustrated in FIG. 8A, a firstgate wiring 401 a is provided over a substrate 400 whose surface isprovided with an insulating layer 410, an insulating layer 411 and aninsulating layer 412 are provided over the first gate wiring 401 a, afirst semiconductor layer 403 a is provided over the insulating layer412, and an electrode 405 a and an electrode 405 b are provided over thefirst semiconductor layer 403 a. In a similar manner, in the second thinfilm transistor 430 b, a second gate wiring 401 b is provided over thesubstrate 400 whose surface is provided with the insulating layer 410,the insulating layer 411 and the insulating layer 412 are provided overthe second gate wiring 401 b, a second semiconductor layer 403 b isprovided over the insulating layer 412, and the electrode 405 b and anelectrode 405 c are provided over the second semiconductor layer 403 b.Here, the electrode 405 c is directly connected to the second gatewiring 401 b through a contact hole 404 formed in the insulating layer411 and the insulating layer 412. Further, an insulating layer 413, aninsulating layer 414, and an insulating layer 415 are formed over theelectrode 405 a, the electrode 405 b, and the electrode 405 c. Note thatthe electrode 405 a, the electrode 405 b, and the electrode 405 c areextended as illustrated in FIG. 8C, and also function as wirings whichelectrically connect the thin film transistors in the driver circuit.

Here, the first gate wiring 401 a and the second gate wiring 401 b canbe formed using a material and a method similar to those of the gatewiring 203 described in Embodiment 1 or 2. The first semiconductor layer403 a and the second semiconductor layer 403 b can be formed using amaterial and a method similar to those of the semiconductor layer 205described in Embodiment 1 or 2. The electrode 405 a, the electrode 405b, and the electrode 405 c can be formed using a material and a methodsimilar to those of the pair of electrodes 207 a and 207 b described inEmbodiment 1 or 2. The insulating layers 410 to 415 can be formed usingmaterials and methods similar to those of the insulating layer 201, theinsulating layers 204 a and 204 b, the insulating layers 208 a and 208b, and the insulating layer 211, respectively.

Further, the contact hole 404 is formed in such a manner that, in thefourth photolithography step described in Embodiment 2, a mask is formedover the insulating layer 412 and used for selective etching of theinsulating layer 412 and the insulating layer 411. By the directconnection between the electrode 405 c and the second gate wiring 401 bthrough the contact hole 404, favorable contact can be obtained, whichleads to reduction in contact resistance. Moreover, as compared to thecase where the electrode 405 c is connected to the second gate wiring401 b through another conductive film such as a light-transmittingconductive film, the number of contact holes can be reduced;consequently, the area occupied by the thin film transistor can bereduced and the distance between thin film transistors in the drivercircuit can be shortened.

As described above, the distance between the thin film transistors inthe driver circuit can be shortened and wiring resistance can besufficiently reduced; therefore, a conductive layer including Cu is notnecessarily used as a wiring which electrically connects the thin filmtransistors. Accordingly, the distance between the thin film transistorin the driver circuit and a conductive layer including Cu can be longenough, whereby diffusion of Cu into the oxide semiconductor layer ofthe thin film transistor can be prevented. However, a power supply linewhich supplies a power supply potential to each thin film transistors ora wiring such as a common wiring which is relatively long is affected bywiring resistance relatively easily. Thus, a wiring formed using theconductive layer including Cu is preferably used for such wirings.

As described in Embodiment 1, the gate driver circuit 91 is connected tothe gate wirings (20_1 to 20 _(—) n (note that n is a natural number)),and the source driver circuit 92 is connected to the source wirings(60_1 to 60 _(—) m (note that m is a natural number)); the gate wirings(20_1 to 20 _(—) n (note that n is a natural number)) and the sourcewirings (60_1 to 60 _(—) m (note that m is a natural number)) are formedusing the conductive layer including Cu. Therefore, even in a displayportion where the distance led by the wirings is long, wiring resistancecan be sufficiently reduced.

The electrode 405 a is a power supply line at a ground potential (aground power supply line). This power supply line at a ground potentialmay be a power supply line to which negative voltage VDL is applied (anegative power supply line). The electrode 405 c is electricallyconnected to a power supply line to which positive voltage VDD isapplied (a positive power supply line).

An equivalent circuit of the EEMOS circuit is illustrated in FIG. 8B.The circuit connection illustrated in FIGS. 8A and 8C corresponds to theequivalent circuit illustrated in FIG. 8B, and the first thin filmtransistor 430 a and the second thin film transistor 430 b areenhancement type n-channel transistors as an example.

Here, gate electrodes may be provided above and below oxidesemiconductor layers and the threshold voltage may be controlled so thatthe first thin film transistor 430 a and the second thin film transistor430 b may behave as enhancement type n-channel transistors.

Further, not being limited to the EEMOS circuit, an EDMOS circuit canalso be manufactured by forming the first thin film transistor 430 a tobe an enhancement type n-channel transistor and forming the second thinfilm transistor 430 b to be a depletion type n-channel transistor. Inthat case, instead of the electrode 405 c, the electrode 405 b isconnected to the second gate wiring 401 b.

In order to manufacture an enhancement type n-channel transistor and adepletion type n-channel transistor over one substrate, for example, thefirst semiconductor layer 403 a and the second semiconductor layer 403 bare formed using different materials or under different conditions. AnEDMOS circuit may be formed in such a manner that gate electrodes forcontrolling the threshold value are provided over oxide semiconductorlayers to control the threshold value and voltage is applied to the gateelectrodes for controlling the threshold value so that one of the TFTsis normally on while the other TFT is normally off.

Note that the structure described in this embodiment can be combinedwith any of the structures described in the other embodiments asappropriate.

Embodiment 4

In this embodiment, a protection circuit using a semiconductor elementin which an oxide semiconductor film is applied to a semiconductor layerwill be described with reference to FIGS. 9A and 9B and FIG. 10. Inaddition, a structure of a connection portion where different commonwirings between which an insulating film is provided are connected willbe described with reference to FIGS. 11A and 11B.

An example of a circuit that can be applied to the protection circuit 97is illustrated in FIG. 9A. This protection circuit includes non-linearelements 170 a and 170 b. Each of the non-linear elements 170 a and 170b includes a two-terminal element such as a diode or a three-terminalelement such as a transistor. For example, the non-linear element can beformed through the same process as the transistor in the pixel portion.For example, characteristics similar to those of a diode can be obtainedby connecting a gate terminal to a drain terminal of the non-linearelement.

A first terminal (gate) and a third terminal (drain) of the non-linearelement 170 a are connected to the common wiring 45, and a secondterminal (source) thereof is connected to the source wiring 60_1. Afirst terminal (gate) and a third terminal (drain) of the non-linearelement 170 b are connected to the source wiring 60_1, and a secondterminal (source) thereof is connected to the common wiring 45. That is,the protection circuit illustrated in FIG. 9A has a structure in whichthe two transistors are each connected to the common wiring 45 and thesource wiring 60_1 so as to have opposite rectifying directions. Inother words, a transistor whose rectifying direction is from the commonwiring 45 to the source wiring 60_1 and a transistor whose rectifyingdirection is from the source wiring 60_1 to the common wiring 45 areconnected between the common wiring 45 and the source wiring 60_1.

In the above protection circuit, when the source wiring 60_1 ispositively or negatively charged due to static electricity or the like,current flows in a direction that cancels the charge. For example, whenthe source wiring 60_1 is positively charged, current flows in adirection in which the positive charge is released to the common wiring45. Owing to this operation, electrostatic breakdown or a shift in thethreshold voltage of a pixel transistor connected to the charged sourcewiring 60_1 can be prevented. Moreover, it is possible to preventdielectric breakdown of an insulating layer, between the charged sourcewiring 60_1 and another wiring that intersect with each other with theinsulating layer interposed therebetween.

It is to be noted that the protection circuit is not limited to theabove structure. For example, a structure in which a plurality oftransistors whose rectifying direction is from the common wiring 45 tothe source wiring 60_1 and a plurality of transistors whose rectifyingdirection is from the source wiring 60_1 to the common wiring 45 areconnected may be employed. By connecting the common wiring 45 and thesource wiring 60_1 with a plurality of non-linear elements, charges canbe prevented from being directly applied to the source wiring 60_1 notonly in the case where surge voltage is applied to the source wiring60_1 but also in the case where the common wiring 45 is charged due tostatic electricity or the like. In addition, a protection circuit can beconfigured using an odd number of non-linear elements.

Although FIG. 9A illustrates an example in which the protection circuitis provided for the source wiring 60_1 and the common wiring 45, asimilar configuration can be applied to a protection circuit of anotherportion. Note that the protection circuit of FIG. 9A can be formed byapplying a semiconductor element of one embodiment of the presentinvention to the non-linear element 170 a and the non-linear element 170b.

Next, an example in which a protection circuit is formed over asubstrate with the use of a semiconductor element of one embodiment ofthe present invention is described with reference to FIG. 9B and FIG.10. Note that FIG. 9B is an example of a plan view of wirings and aconnection portion between the wirings, and FIG. 10 is a cross-sectionalview taken along line Q1-Q2, line Q3-Q4, and line Q5-Q6 in FIG. 9B.

FIG. 9B is a plan view of a portion where the common wiring 45 and thesource wiring 60_1 are connected with the non-linear element 170 a andthe non-linear element 170 b and illustrates an example of a structureof the protection circuit 97.

The non-linear element 170 a includes a gate wiring 111 a, and the gatewiring 111 a is connected to the common wiring 45. One of a sourceelectrode and a drain electrode of the non-linear element 170 a isconnected to the source wiring 60_1, and the other thereof is formed ofa first electrode 115 a. Further, the first electrode 115 a is connectedto the common wiring 45.

The non-linear element 170 b includes a gate wiring 111 b, and the gatewiring 111 b is connected to the source wiring 60_1 through a contacthole 126, a second electrode 115 b, and a contact hole 125. A sourceelectrode and a drain electrode of the non-linear element 170 b areformed of the first electrode 115 a and the second electrode 115 b.Further, the non-linear element 170 b includes a semiconductor layer113.

Next, structures of the common wiring 45, the source wiring 60_1, andthe non-linear element 170 b are described with reference to FIG. 10.

The common wiring 45 is formed using the same wiring layer as the gatewiring. The common wiring 45 is formed so that a gate wiring 45 a and agate wiring 45 b are stacked over an insulating film 101 which isprovided over the substrate 100. Note that an insulating layer 102 isformed over the gate wiring 45 b, an insulating layer 117 is providedover the insulating layer 102, and an insulating layer 118 is formedover the insulating layer 117.

The source wiring 60_1 is formed over the insulating layer 118. Thesource wiring 60_1 is formed so that a source wiring 60_1 a and a sourcewiring 60_1 b are stacked in this order. Note that an insulating layer119 is formed over the source wiring 60_1.

The non-linear element 170 b includes the gate wiring 111 b over theinsulating film 101 which is provided over the substrate 100, and theinsulating layer 102 over the gate wiring 111 b. Further, the non-linearelement 170 b includes the semiconductor layer 113 over the gate wiring111 b with the insulating layer 102 interposed therebetween, and theelectrode 115 a and the electrode 115 b which are in contact with thesemiconductor layer 113 with end portions thereof overlapping with thegate wiring 111 b. The insulating layer 117 is formed to overlap withthe gate wiring 111 b and be in contact with the semiconductor layer 113which is between the end portions of the electrode 115 a and theelectrode 115 b, and the insulating layer 118 is formed over theinsulating layer 117. Note that the insulating layer 102 is formed as astack of an insulating layer 102 a and an insulating layer 102 b.

The electrode 115 b is directly connected to the gate wiring 111 bthrough the contact hole 125 provided in the insulating layer 102. Theelectrode 115 b is connected to the source wiring 60_1 through thecontact hole 126. The insulating layer 119 is formed over the insulatinglayer 118 and the source wiring 60_1.

For the conductive film serving as the electrode 115 a and the electrode115 b, an element selected from Ti, Mo, W, Cr, Cu, and Ta, an alloyincluding any of these elements as a component, an alloy including anyof these elements in combination, or the like is used. The conductivefilm is not limited to a single layer including the above element andmay be a stack of two or more layers.

Metal with high oxygen affinity is particularly preferable for theconductive film which is in contact with the semiconductor layer 113 sothat a junction of the metal with high oxygen affinity and an oxidesemiconductor is formed. Titanium is particularly preferable amongmetals with high oxygen affinity. Instead of a titanium film, a titaniumnitride film may be used.

By providing such a junction structure between the semiconductor layer113 and the electrode 115 a and between the semiconductor layer 113 andthe electrode 115 b, operation of the non-linear element 170 a and thenon-linear element 170 b is stabilized. That is, the thermal stabilityis increased, so that stable operation becomes possible. Accordingly,the function of the protection circuit is enhanced and the operation canbe made stable. Moreover, the amount of junction leakage is reduced,whereby parasitic resistance in the non-linear element 170 a and thenon-linear element 170 b and variation in parasitic resistance can bereduced.

Note that the non-linear element 170 a and the non-linear element 170 bhave the same structure in the main portion. The non-linear element 170b can have the same structure as the thin film transistor in the pixelportion, which is described in Embodiment 1. Therefore, detaileddescription of the non-linear element 170 a and the non-linear element170 b is omitted in this embodiment. In addition, the non-linearelements 170 a and 170b and the above thin film transistor can bemanufactured over one substrate through the same process.

An example of a connection between the common wirings is described withreference to FIGS. 11A and 11B. Note that FIG. 11A is an example of aplan view of wirings and a connection portion between the wirings, andFIG. 11B is a cross-sectional view taken along line R1-R2 and line R3-R4in FIG. 11A.

As described above, the common wiring 45 has a structure in which thegate wiring 45 a and the gate wiring 45 b are stacked in this order. Thecommon wiring 65 has the same structure as the source wiring 60_1. Thatis, the common wiring 65 has a structure in which a source wiring 65 aand a source wiring 65 b are stacked in this order. The source wiring 65a is formed using the same conductive film as the source wiring 60_1 a,and the source wiring 65 b is formed using the same conductive film asthe source wiring 60_1 b.

In the connection portion 95, the common wiring 45 and the common wiring65 are electrically connected to each other. The connection portion 95is described with reference to FIG. 11B. The common wiring 45 and thecommon wiring 65 are connected to each other through a contact hole 127formed in the insulating layer 102, the insulating layer 117, and theinsulating layer 118.

In the connection portion 95, the gate wiring 45 b and the source wiring65 a which include a conductive material including an element with ahigher melting point than Cu are connected to each other, and thus ahighly reliable connection is realized. Furthermore, the gate wiring 45a and the source wiring 65 b which are formed using a conductivematerial including Cu suppress wiring resistance.

The common connection portion 96 is provided in a region outside thepixel portion and is a connection portion which is electricallyconnected to a substrate having a connection portion that is provided toface the common connection portion 96 through conductive particles (suchas plastic particles plated with gold). An example in which the commonconnection portion 96 is formed over the conductive layer where the gatewiring 45 a and the gate wiring 45 b are stacked in this order isdescribed with reference to FIG. 11B.

The common connection portion 96 is electrically connected to the commonwiring 45. Over the conductive layer where the gate wiring 45 a and thegate wiring 45 b are stacked in this order, an electrode 115 c is formedwith the insulating layer 102 a and the insulating layer 102 binterposed therebetween. The electrode 115 c is electrically connectedto the conductive layer through a contact hole 128 that is formed in theinsulating layer 102 a and the insulating layer 102 b. A conductivelayer 66 which has the same structure as the common wiring 65 is stackedover the electrode 115 c, and then a conductive layer 129 is formedusing the same light-transmitting conductive film as the electrode 212which functions as a pixel electrode.

The gate wiring 45 a and the source wiring 60 _(—1) b which areconnected to the protection circuit described as an example in thisembodiment are formed using a conductive material including Cu and havelow wiring resistance.

The gate wiring 45 b is formed using a conductive material including anelement with a higher melting point than Cu, such as W, Ta, Mo, Ti, orCr, so as to be in contact with and cover the gate wiring 45 a, wherebymigration of the gate wiring 45 a can be suppressed and reliability ofthe semiconductor device can be improved. Further, insulating layersincluding silicon nitride are formed as the insulating layers locatedover and under the gate wiring 45 a including Cu so that the gate wiring45 a including Cu is sandwiched between or surrounded by the insulatinglayers, whereby diffusion of Cu included in the gate wiring 45 a can beprevented.

The protection circuit described as an example in this embodiment has astructure in which a first terminal (gate) of a non-linear element isdirectly connected to a second terminal (source) or a third terminal(drain) thereof through one contact hole. As a result, only oneinterface and one contact hole are formed for one connection, which arefewer than the numbers of interfaces and contact holes in the case offorming a connection through another wiring layer.

Note that when the number of interfaces needed for a connection issmall, electric resistance can be reduced. In addition, when the numberof contact holes needed for a connection is small, the area occupied bythe connection portion can be reduced.

Accordingly, connection resistance can be reduced in the protectioncircuit described as an example in this embodiment, which results instable operation of the protection circuit. Moreover, since a connectionis formed using only one contact hole, the area occupied by theprotection circuit can be reduced and thus the size of the displaydevice can be reduced.

Note that this embodiment can be combined with any of the otherembodiments in this specification as appropriate.

Embodiment 5

In this embodiment, as for the display device described in Embodiment 1with reference to FIGS. 1A and 1B, examples of structures of a gatesignal line terminal in the gate terminal portion 7 and a source signalline terminal in the source terminal portion 8 will be described.

FIGS. 12A1 and 12A2 are a cross-sectional view and a plan view of thegate signal line terminal, respectively. FIG. 12A1 is a cross-sectionalview taken along line C1-C2 in FIG. 12A2. In the gate signal lineterminal: as illustrated in FIG. 12A1, an insulating layer 360 is formedover a substrate 300; a gate wiring 351 a is formed over the insulatinglayer 360; a gate wiring 351 b is formed to cover at least an endportion of the gate wiring 351 a; an insulating layer 361, an insulatinglayer 362, an insulating layer 363, an insulating layer 364, and aninsulating layer 365 are formed over the gate wiring 351 b; and atransparent conductive layer 355 is formed over the insulating layer 365and the gate wiring 351 b. Here, the gate wiring 351 a and the gatewiring 351 b are collectively referred to as a gate wiring 351, and thegate wiring 351 b functions as a first terminal of the gate signal lineterminal. In addition, end portions of the insulating layers 361 to 365are patterned, so that an end portion of the gate wiring 351 b isexposed and in direct contact with the transparent conductive layer 355.The transparent conductive layer 355 which is in direct contact with theend portion of the gate wiring 351 b which is the first terminal is aconnection terminal electrode which functions as an input terminal.Here, the gate wiring 351 a, the gate wiring 351 b, and the transparentconductive layer 355 can be formed using materials and methods similarto those of the gate wiring 202, the gate wiring 203, and the electrode212 which are described in Embodiments 1 and 2, respectively. Inaddition, the insulating layers 360 to 365 can be formed using materialsand methods similar to those of the insulating layer 201, the insulatinglayers 204 a and 204 b, the insulating layers 208 a and 208 b, and theinsulating layer 211 which are described in Embodiments 1 and 2,respectively.

By forming the gate wiring 351 a with the use of a conductive materialincluding Cu, wiring resistance in the gate signal line terminal and awiring led from the gate signal line terminal can be reduced. Further,the gate wiring 351 b is formed using a conductive material including anelement with a higher melting point than Cu, such as W, Ta, Mo, Ti, orCr, so as to be in contact with and cover the gate wiring 351 a, wherebymigration of the gate wiring 351 a can be suppressed and reliability ofthe semiconductor device can be improved. Furthermore, by providinginsulating layers including silicon nitride as the insulating layer 360and the insulating layer 361 which are insulating layers located overand under the gate wiring 351 a including Cu so that the gate wiring 351a including Cu may be sandwiched between or surrounded by the insulatinglayers, diffusion of Cu included in the gate wiring 351 a can beprevented.

Further, FIGS. 12B1 and 12B2 are a cross-sectional view and a plan viewof the source signal line terminal, respectively. FIG. 12B1 is across-sectional view taken along line D1-D2 in FIG. 12B2. In the sourcesignal line terminal, as illustrated in FIG. 12B1, the insulating layer360, the insulating layer 361, and the insulating layer 362 are formedover the substrate 300, an electrode 352 is formed over the insulatinglayer 362, the insulating layer 363 and the insulating layer 364 areformed over the electrode 352, a source wiring 354 a is formed over theinsulating layer 364, a source wiring 354 b is formed over the sourcewiring 354 a, the insulating layer 365 is formed over the source wiring354 b, and the transparent conductive layer 355 is formed over theinsulating layer 365 and the electrode 352. Here, the source wiring 354a and the source wiring 354 b are collectively referred to as a sourcewiring 354. In addition, end portions of the insulating layers 363 to365 are patterned, so that an end portion of the electrode 352 isexposed and in direct contact with the transparent conductive layer 355.A contact hole is formed in the insulating layer 363 and the insulatinglayer 364, through which the electrode 352 functioning as a secondterminal of the source signal line terminal and the source wiring 354are connected to each other. The transparent conductive layer 355 whichis in direct contact with the end portion of the electrode 352 which isthe second terminal is a connection terminal electrode which functionsas an input terminal. Here, the electrode 352, the source wiring 354 a,the source wiring 354 b, and the transparent conductive layer 355 can beformed using materials and methods similar to those of the pair ofelectrodes 207 a and 207 b, the source wiring 209, the source wiring210, and the electrode 212 which are described in Embodiments 1 and 2,respectively. Further, the insulating layers 360 to 365 can be formedusing materials and methods similar to those of the insulating layer201, the insulating layers 204 a and 204 b, the insulating layers 208 aand 208 b, and the insulating layer 211 which are described inEmbodiments 1 and 2, respectively.

By forming the source wiring 354 b with the use of a conductive materialincluding Cu, wiring resistance in the source signal line terminal and awiring led from the source signal line terminal can be reduced. Further,the source wiring 354 a is formed using a conductive material includingan element with a higher melting point than Cu, such as W, Ta, Mo, Ti,or Cr, an alloy including any of these elements in combination, tantalumnitride, titanium nitride, molybdenum nitride, or the like, so as to bein contact with the source wiring 354 b, whereby migration of the sourcewiring 354 b can be suppressed and reliability of the semiconductordevice can be improved. Furthermore, by providing insulating layersincluding silicon nitride as the insulating layer 364 and the insulatinglayer 365 which are insulating layers located over and under the sourcewiring 354 b including Cu so that the source wiring 354 b including Cumay be sandwiched between or surrounded by the insulating layers,diffusion of Cu included in the source wiring 354 b can be prevented.

In an example described in this embodiment, the gate wiring 351 b whichis the first terminal and included in the gate wiring 351 having astacked-layer structure is connected to the transparent conductive layer355 functioning as the input terminal is described in this embodiment;however, this embodiment is not limited thereto. As illustrated in FIGS.13A1 and 13A2, a structure in which the first terminal is constituted byonly the gate wiring 351 a and the gate wiring 351 a is in directcontact with the transparent conductive layer 355 may be employed. Here,FIG. 13A1 is a cross-sectional view taken along line C1-C2 in FIG. 13A2.

Furthermore, an example in which the source wiring 354 is connected tothe transparent conductive layer 355 functioning as the input terminalthrough the electrode 352 which is the second terminal is described inthis embodiment; however, this embodiment is not limited thereto. Asillustrated in FIGS. 13B1 and 13B2, in the source wiring 354 functioningas the second terminal, the source wiring 354 b may be in direct contactwith the transparent conductive layer 355. Here, FIG. 13B1 is across-sectional view taken along line D1-D2 in FIG. 13B2.

A plurality of gate wirings, source wirings, and capacitor wirings areprovided depending on the pixel density. In the terminal portion, aplurality of first terminals at the same potential as the gate wiring, aplurality of second terminals at the same potential as the sourcewiring, a plurality of third terminals at the same potential as thecapacitor wiring, and the like are arranged. The number of each of theterminals may be any number, and the number of the terminals may bedetermined by a practitioner as appropriate.

Note that the structure described in this embodiment can be combinedwith any of the structures described in the other embodiments asappropriate.

Embodiment 6

In this embodiment, an example will be described below in which at leastpart of a driver circuit and a thin film transistors to be disposed in apixel portion are formed over one substrate.

The thin film transistor to be disposed in the pixel portion is formedaccording to any of Embodiments 1 to 4. Further, the thin filmtransistor described in any of Embodiments 1 to 4 is an n-channel TFT.Thus, part of a driver circuit that can be formed using n-channel TFTsamong driver circuits is formed over the same substrate as the thin filmtransistor of the pixel portion.

FIG. 18A is an example of a block diagram of an active matrix displaydevice. Over a substrate 5300 in the display device, a pixel portion5301, a first scan line driver circuit 5302, a second scan line drivercircuit 5303, and a signal line driver circuit 5304 are provided. In thepixel portion 5301, a plurality of signal lines which are extended fromthe signal line driver circuit 5304 are provided and a plurality of scanlines which are extended from the first scan line driver circuit 5302and the second scan line driver circuit 5303 are provided. Note thatpixels which include display elements are provided in matrix inrespective regions where the scan lines and the signal lines intersectwith each other. Further, the substrate 5300 in the display device isconnected to a timing control circuit 5305 (also referred to as acontroller or a controller IC) through a connection portion such as aflexible printed circuit (FPC).

In FIG. 18A, the first scan line driver circuit 5302, the second scanline driver circuit 5303, and the signal line driver circuit 5304 areformed over the same substrate 5300 as the pixel portion 5301.Accordingly, the number of components of a driver circuit and the likeprovided outside is reduced, whereby reduction in cost can be achieved.In addition, the number of connection portions (such as an FPC) for thesubstrate 5300 and the external driver circuit can be reduced; thus,reliability or yield can be improved.

Note that the timing control circuit 5305 supplies, for example, a firstscan line driver circuit start signal (GSP1) and a scan line drivercircuit clock signal (GCK1) to the first scan line driver circuit 5302.The timing control circuit 5305 supplies, for example, a second scanline driver circuit start signal (GSP2) (also referred to as a startpulse) and a scan line driver circuit clock signal (GCK2) to the secondscan line driver circuit 5303. The timing control circuit 5305 suppliesa signal line driver circuit start signal (SSP), a signal line drivercircuit clock signal (SCK), video signal data (DATA) (also simplyreferred to as a video signal), and a latch signal (LAT) to the signalline driver circuit 5304. Note that each clock signal may be a pluralityof clock signals whose periods are different or may be supplied togetherwith an inverted clock signal (CKB). Note that one of the first scanline driver circuit 5302 and the second scan line driver circuit 5303can be omitted.

FIG. 18B illustrates a structure in which circuits with low drivingfrequency (e.g., the first scan line driver circuit 5302 and the secondscan line driver circuit 5303) are formed over the same substrate 5300as the pixel portion 5301, and the signal line driver circuit 5304 isformed over a substrate which is different from the substrate 5300 overwhich the pixel portion 5301 is formed. With this structure, a drivercircuit formed over the substrate 5300 can be constituted by using thinfilm transistors with lower field effect mobility as compared to that ofa transistor formed using a single crystal semiconductor. Accordingly,increase in the size of the display device, reduction in the number ofsteps, reduction in cost, improvement in yield, and the like can beachieved.

The thin film transistor described in any of Embodiments 1 to 4 is ann-channel TFT. In FIGS. 19A and 19B, an example of a structure andoperation of a signal line driver circuit which is formed using then-channel TFT is described as an example.

The signal line driver circuit includes a shift register 5601 and aswitching circuit 5602. The switching circuit 5602 includes a pluralityof switching circuits 5602_1 to 5602_N (N is a natural number). Theswitching circuits 5602_1 to 5602_N each include a plurality of thinfilm transistors 5603_1 to 5603 _(—) k (k is a natural number). Anexample in which the thin film transistors 5603_1 to 5603 _(—) k aren-channel TFTs will be described.

A connection relation of the signal line driver circuit will bedescribed by using the switching circuit 5602_1 as an example. Firstterminals of the thin film transistors 5603_1 to 5603 _(—) k areconnected to wirings 5604_1 to 5604 _(—) k, respectively. Secondterminals of the thin film transistors 5603_1 to 5603 _(—) k areconnected to signal lines S1 to Sk, respectively. Gates of the thin filmtransistors 5603_1 to 5603 _(—) k are connected to a wiring 5605_1.

The shift register 5601 has a function of sequentially selecting theswitching circuits 5602_1 to 5602_N by sequentially outputting H-levelsignals (also referred to as H signals or signals at a high power supplypotential level) to wirings 5605_1 to 5605_N.

For example, the switching circuit 5602_1 has a function of controllingconduction states between the wirings 5604_1 to 5604 _(—) k and thesignal lines S1 to Sk (conduction states between the first terminals andthe second terminals), that is, a function of controlling whether or notto supply potentials of the wirings 5604_1 to 5604 _(—) k to the signallines S1 to Sk. In this manner, the switching circuit 5602_1 functionsas a selector. The thin film transistors 5603_1 to 5603 _(—) k havefunctions of controlling conduction states between the wirings 5604_1 to5604 _(—) k and the signal lines S1 to Sk, that is, functions ofsupplying potentials of the wirings 5604_1 to 5604 _(—) k to the signallines S1 to Sk, respectively. In this manner, each of the thin filmtransistors 5603_1 to 5603 _(—) k functions as a switch.

Note that video signal data (DATA) is input to each of the wirings5604_1 to 5604 _(—) k. The video signal data (DATA) is an analog signalcorresponding to image data or image signals in many cases.

Next, operation of the signal line driver circuit in FIG. 19A isdescribed with reference to a timing chart in FIG. 19B. FIG. 19Billustrates examples of signals Sout_1 to Sout_N and signals Vdata_1 toVdata_(—) k. The signals Sout_1 to Sout_N are examples of output signalsof the shift register 5601, and the signals Vdata_1 to Vdata_(—) k areexamples of signals which are input to the wirings 5604_1 to 5604 _(—)k. Note that one operation period of the signal line driver circuitcorresponds to one gate selection period in a display device. Forexample, one gate selection period is divided into periods T1 to TN. Theperiods T1 to TN are periods for writing video signal data (DATA) to thepixels which belong to a selected row.

Note that signal waveform distortion and the like in each structureillustrated in drawings and the like in this embodiment are exaggeratedfor simplicity in some cases. Therefore, this embodiment is notnecessarily limited to the scale illustrated in the drawings and thelike.

In the periods T1 to TN, the shift register 5601 sequentially outputs Hlevel signals to the wirings 5605_1 to 5605_N. For example, in theperiod T1, the shift register 5601 outputs an H level signal to thewiring 5605_1. Then, the thin film transistors 5603_1 to 5603 _(—) k areturned on, so that the wirings 5604_1 to 5604 _(—) k and the signallines S1 to Sk are brought into conduction. In this case, Data (S1) toData (Sk) are input to the wirings 5604_1 to 5604 _(—) k, respectively.The Data (S1) to Data (Sk) are input to pixels in a selected row in afirst to k-th columns through the thin film transistors 5603_1 to 5603_(—) k, respectively. Thus, in the periods T1 to TN, video signal data(DATA) is sequentially written to the pixels in the selected row ofevery k columns.

By writing video signal data (DATA) to pixels of every plurality ofcolumns, the number of video signal data (DATA) or the number of wiringscan be reduced. Thus, connections to an external circuit can be reduced.By writing video signal data (DATA) to pixels of every plurality ofcolumns, writing time can be extended and insufficient writing of videosignal data (DATA) can be prevented.

Note that as the shift register 5601 and the switching circuit 5602, acircuit including the thin film transistor described in Embodiment 3 canbe used. In this case, the shift register 5601 can be constituted byonly n-channel transistors or only p-channel transistors.

One embodiment of a shift register which is used for part of a scan linedriver circuit and/or a signal line driver circuit is described withreference to FIGS. 20A to 20C and FIGS. 21A and 21B.

The scan line driver circuit includes a shift register. The scan linedriver circuit may also include a level shifter, a buffer, or the likein some cases. In the scan line driver circuit, when a clock signal (CK)and a start pulse signal (SP) are input to the shift register, aselection signal is generated. The generated selection signal isbuffered and amplified by the buffer, and the resulting signal issupplied to a corresponding scan line. Gate electrodes of transistors inpixels of one line are connected to the scan line. Since the transistorsin the pixels of one line need to be turned on all at once, a bufferwhich can supply large current is used.

The shift register includes first to N-th pulse output circuits 10_1 to10_N (N is a natural number of 3 or more) (see FIG. 20A). A first clocksignal CK1 from a first wiring 11, a second clock signal CK2 from asecond wiring 12, a third clock signal CK3 from a third wiring 13, and afourth clock signal CK4 from a fourth wiring 14 are supplied to thefirst to N-th pulse output circuits 10_1 to 10_N of the shift registerillustrated in FIG. 20A. A start pulse SP1 (a first start pulse) from afifth wiring 15 is input to the first pulse output circuit 10_1. To then-th pulse output circuit 10 _(—) n of the second or subsequent stage (nis a natural number greater than or equal to 2 and less than or equal toN), a signal from the pulse output circuit of the preceding stage (sucha signal is referred to as a preceding-stage signal OUT(n−1)) (n is anatural number greater than or equal to 2) is input. A signal from thethird pulse output circuit 10_3 which is two stages after the firstpulse output circuit 10_1 is input to the first pulse output circuit10_1. In a similar manner, to the n-th pulse output circuit 10_(—) n ofthe second or subsequent stage, a signal from the (n+2)-th pulse outputcircuit 10_(n+2) of the stage following the next stage (such a signal isreferred to as a subsequent-stage signal OUT(n+2)) is input. Therefore,the pulse output circuits of the respective stages output first outputsignals (OUT(1)(SR) to OUT(N)(SR)) to be input to the pulse outputcircuit of the respective subsequent stage and/or the pulse outputcircuit of the stage before the previous stage and second output signals(OUT(1) to OUT(N)) to be input to another wiring or the like. Note thatas illustrated in FIG. 20A, the subsequent-stage signal OUT(n+2) is notinput to last two stages of the shift register; as an example, a secondstart pulse SP2 and a third start pulse SP3 may be additionally input tothe last two stages of the shift register from a sixth wiring 16 and aseventh wiring 17, respectively. Alternatively, a signal that isadditionally generated inside the shift register may be used. Forexample, an (N+1)-th pulse output circuit 10_(N+1) and an (N+2)-th pulseoutput circuit 10_(N+2) which do not contribute to pulse output to thepixel portion (such circuits are also referred to as dummy stages) maybe provided so that signals corresponding to the second start pulse(SP2) and the third start pulse (SP3) are generated in the dummy stages.

Note that a clock signal (CK) is a signal which alternates between an Hlevel and an L level (also referred to as an L signal or a signal at alow power supply potential level) at regular intervals. The first to thefourth clock signals (CK1) to (CK4) are delayed by ¼ periodsequentially. In this embodiment, by using the first to fourth clocksignals (CK1) to (CK4), control of driving of a pulse output circuit orthe like is performed. Note that the clock signal is also called GCK orSCK in accordance with a driver circuit to which the clock signal isinput; however, description is made using CK as the clock signal.

A first input terminal 21, a second input terminal 22, and a third inputterminal 23 are electrically connected to any of the first to fourthwirings 11 to 14. For example, in FIG. 20A, the first input terminal 21of the first pulse output circuit 10_1 is electrically connected to thefirst wiring 11, the second input terminal 22 of the first pulse outputcircuit 10_1 is electrically connected to the second wiring 12, and thethird input terminal 23 of the first pulse output circuit 10_1 iselectrically connected to the third wiring 13. The first input terminal21 of the second pulse output circuit 10_2 is electrically connected tothe second wiring 12, the second input terminal 22 of the second pulseoutput circuit 10_2 is electrically connected to the third wiring 13,and the third input terminal 23 of the second pulse output circuit 10_2is electrically connected to the fourth wiring 14.

Each of the first to N-th pulse output circuits 10_1 to 10_N includesthe first input terminal 21, the second input terminal 22, the thirdinput terminal 23, the fourth input terminal 24, a fifth input terminal25, a first output terminal 26, and a second output terminal 27 (seeFIG. 20B). In the first pulse output circuit 10_1, the first clocksignal CK1 is input to the first input terminal 21, the second clocksignal CK2 is input to the second input terminal 22, the third clocksignal CK3 is input to the third input terminal 23, the start pulse isinput to the fourth input terminal 24, the subsequent-stage signalOUT(3) is input to the fifth input terminal 25, the first output signalOUT(1)(SR) is output from the first output terminal 26, and the secondoutput signal OUT(1) is output from the second output terminal 27.

Next, an example of a specific circuit configuration of the pulse outputcircuit which is illustrated in FIG. 19A is described with reference toFIG. 20C.

The pulse output circuit which is illustrated in FIG. 20C includes firstto eleventh transistors 31 to 41. Signals or power supply potentials aresupplied to the first to eleventh transistors 31 to 41 from a powersupply line 51 to which a first high power supply potential VDD issupplied, a power supply line 52 to which a second high power supplypotential VCC is supplied, and a power supply line 53 to which a lowpower supply potential VSS is supplied, in addition to the above firstto fifth input terminals 21 to 25 and the first and second outputterminals 26 and 27. Here, a magnitude relation of the power supplypotentials of the power supply lines in FIG. 20C is as follows: thefirst high power supply potential VDD is higher than or equal to thesecond high power supply potential VCC, and the second high power supplypotential VCC is higher than the low power supply potential VSS. Notethat the first to fourth clock signals (CK1) to (CK4) are each a signalwhich alternates between an H level and an L level at regular intervals;the clock signal at the H level is VDD, and the clock signal at the Llevel is VSS. Note that when the potential VCC of the power supply line52 is set to be lower than the potential VDD of the power supply line51, a potential applied to the gate electrode of the transistor can bereduced without affecting the operation; thus, the shift of thethreshold value of the transistor can be reduced and deterioration canbe suppressed.

In FIG. 20C, a first terminal of the first transistor 31 is electricallyconnected to the power supply line 51, a second terminal of the firsttransistor 31 is electrically connected to a first terminal of the ninthtransistor 39, and a gate electrode of the first transistor 31 iselectrically connected to the fourth input terminal 24. A first terminalof the second transistor 32 is electrically connected to the powersupply line 53, a second terminal of the second transistor 32 iselectrically connected to the first terminal of the ninth transistor 39,and a gate electrode of the second transistor 32 is electricallyconnected to a gate electrode of the fourth transistor 34. A firstterminal of the third transistor 33 is electrically connected to thefirst input terminal 21, and a second terminal of the third transistor33 is electrically connected to the first output terminal 26. A firstterminal of the fourth transistor 34 is electrically connected to thepower supply line 53, and a second terminal of the fourth transistor 34is electrically connected to the first output terminal 26. A firstterminal of the fifth transistor 35 is electrically connected to thepower supply line 53, a second terminal of the fifth transistor 35 iselectrically connected to the gate electrode of the second transistor 32and the gate electrode of the fourth transistor 34, and a gate electrodeof the fifth transistor 35 is electrically connected to the fourth inputterminal 24. A first terminal of the sixth transistor 36 is electricallyconnected to the power supply line 52, a second terminal of the sixthtransistor 36 is electrically connected to the gate electrode of thesecond transistor 32 and the gate electrode of the fourth transistor 34,and a gate electrode of the sixth transistor 36 is electricallyconnected to the fifth input terminal 25. A first terminal of theseventh transistor 37 is electrically connected to the power supply line52, a second terminal of the seventh transistor 37 is electricallyconnected to a second terminal of the eighth transistor 38, and a gateelectrode of the seventh transistor 37 is electrically connected to thethird input terminal 23. A first terminal of the eighth transistor 38 iselectrically connected to the gate electrode of the second transistor 32and the gate electrode of the fourth transistor 34, and a gate electrodeof the eighth transistor 38 is electrically connected to the secondinput terminal 22. The first terminal of the ninth transistor 39 iselectrically connected to the second terminal of the first transistor 31and the second terminal of the second transistor 32, a second terminalof the ninth transistor 39 is electrically connected to a gate electrodeof the third transistor 33 and a gate electrode of the tenth transistor40, and a gate electrode of the ninth transistor 39 is electricallyconnected to the power supply line 52. A first terminal of the tenthtransistor 40 is electrically connected to the first input terminal 21,a second terminal of the tenth transistor 40 is electrically connectedto the second output terminal 27, and the gate electrode of the tenthtransistor 40 is electrically connected to the second terminal of theninth transistor 39. A first terminal of the eleventh transistor 41 iselectrically connected to the power supply line 53, a second terminal ofthe eleventh transistor 41 is electrically connected to the secondoutput terminal 27, and a gate electrode of the eleventh transistor 41is electrically connected to the gate electrode of the second transistor32 and the gate electrode of the fourth transistor 34.

In FIG. 20C, a portion where the gate electrode of the third transistor33, the gate electrode of the tenth transistor 40, and the secondterminal of the ninth transistor 39 are connected is referred to as anode A. In addition, a portion where the gate electrode of the secondtransistor 32, the gate electrode of the fourth transistor 34, thesecond terminal of the fifth transistor 35, the second terminal of thesixth transistor 36, the first terminal of the eighth transistor 38, andthe gate electrode of the eleventh transistor 41 is referred to as anode B (see FIG. 21A).

Note that a thin film transistor is an element having at least threeterminals of a gate, a drain, and a source. The thin film transistor hasa semiconductor in which a channel region is formed in a regionoverlapping with the gate, and current which flows between the drain andthe source through the channel region can be controlled by controllingthe potential of the gate. Here, since the source and the drain of thethin film transistor may interchange depending on the structure, theoperating conditions, or the like of the thin film transistor, it isdifficult to determine which is the source and which is the drain.Therefore, a region functioning as a source or a drain is not called thesource or the drain in some cases. In that case, for example, suchregions may be referred to as a first terminal and a second terminal.

Here, FIG. 21B is a timing chart of the shift register including theplurality of pulse output circuits illustrated in FIG. 21A. Note thatwhen the shift register is included in a scan line driver circuit, aperiod 61 and a period 62 in FIG. 21B correspond to a vertical retraceperiod and a gate selection period, respectively.

Note that as illustrated in FIG. 21A, by providing the ninth transistor39 whose gate is supplied with the second power supply potential VCC,advantages described below are obtained before and after a bootstrapoperation.

Without the ninth transistor 39 whose gate is supplied with the secondpower supply potential VCC, if the potential of the node A is raised bythe bootstrap operation, the potential of a source which is the secondterminal of the first transistor 31 increases to a value higher than thefirst power supply potential VDD. Then, the source of the firsttransistor 31 is switched to the first terminal, that is, the terminalon the power supply line 51 side. Therefore, in the first transistor 31,large voltage is applied and thus significant stress is applied betweenthe gate and the source and between the gate and the drain, which cancause deterioration of the transistor. By providing the ninth transistor39 whose gate is supplied the second power supply potential VCC, thepotential of the node A is raised by the bootstrap operation, butincrease in the potential of the second terminal of the first transistor31 can be prevented. In other words, by providing the ninth transistor39, negative voltage applied between the gate and the source of thefirst transistor 31 can be reduced. Accordingly, with the circuitconfiguration of this embodiment, negative voltage applied between thegate and the source of the first transistor 31 can be reduced, so thatdeterioration in the first transistor 31 due to stress can further besuppressed.

Note that the ninth transistor 39 is provided so as to be connectedbetween the second terminal of the first transistor 31 and the gate ofthe third transistor 33 through the first terminal and the secondterminal thereof. When the shift register including a plurality of thepulse output circuits described in this embodiment is used, in a signalline driver circuit having more stages than a scan line driver circuit,the ninth transistor 39 may be omitted, which is advantageous in thatthe number of transistors can be reduced.

When an oxide semiconductor is used for semiconductor layers of thefirst to eleventh transistor 31 to 41, off current of the thin filmtransistor can be reduced, on current and field effect mobility can beincreased, and the degree of deterioration can be decreased; thus amalfunction in a circuit can be reduced. The degree of deterioration ofthe transistor formed using an oxide semiconductor, which is caused byapplication of a high potential to the gate electrode, is small ascompared to that of a transistor formed using amorphous silicon.Therefore, even when the first power supply potential VDD is supplied toa power supply line to which the second power supply potential VCC issupplied, similar operation can be performed, and the number of powersupply lines which are provided in a circuit can be reduced, so that thecircuit can be miniaturized.

Note that even if a wiring connection is changed so that the clocksignal which is supplied to the gate electrode of the seventh transistor37 from the third input terminal 23 and the clock signal which issupplied to the gate electrode of the eighth transistor 38 from thesecond input terminal 22 are a clock signal which is supplied to thegate electrode of the seventh transistor 37 from the second inputterminal 22 and a clock signal which is supplied to the gate electrodeof the eighth transistor 38 from the third input terminal 23,respectively, a similar effect can be obtained. At this time, in theshift register illustrated in FIG. 21A, after the seventh transistor 37and the eighth transistor 38 are both turned on, the seventh transistor37 is turned off and the eighth transistor 38 is still on, and then theseventh transistor 37 is still off and the eighth transistor 38 isturned off. Thus, fall in the potential of the node B, which is causedby fall in the potentials of the second input terminal 22 and the thirdinput terminal 23, occurs twice because of fall in the potential of thegate electrode of the seventh transistor 37 and fall in the potential ofthe gate electrode of the eighth transistor 38. On the other hand, whenstates of the seventh transistor 37 and the eighth transistor 38 in theshift register illustrated in FIG. 21A is changed so that both theseventh transistor 37 and the eighth transistor 38 are on, then theseventh transistor 37 is on and the eighth transistor 38 is off, andthen the seventh transistor 37 and the eighth transistor 38 are off, thenumber of falls in the potential of the node B, which is caused by fallin the potentials of the second input terminal 22 and the third inputterminal 23, can be reduced to one time, which is caused by fall in thepotential of the gate electrode of the eighth transistor 38. Therefore,the connection relation in which the clock signal CK3 is supplied fromthe third input terminal 23 to the gate electrode of the seventhtransistor 37 and the clock signal CK2 is supplied from the second inputterminal 22 to the gate electrode of the eighth transistor 38 ispreferable. That is because the number of times of the change in thepotential of the node B can be reduced, whereby the noise can bereduced.

In this manner, in a period during which the potentials of the firstoutput terminal 26 and the second output terminal 27 are held at the Llevel, the H level signal is regularly supplied to the node B;accordingly, a malfunction of the pulse output circuit can besuppressed.

This embodiment can be combined with any of the structures described inthe other embodiments as appropriate.

Embodiment 7

When a thin film transistor is manufactured and used for a pixel portionand further for a driver circuit, a semiconductor device having adisplay function (also referred to as a display device) can bemanufactured. Furthermore, when part or whole of a driver circuit isformed over the same substrate as a pixel portion, a system-on-panel canbe obtained.

The display device includes a display element. As the display element, aliquid crystal element (also referred to as a liquid crystal displayelement) or a light-emitting element (also referred to as alight-emitting display element) can be used. Light-emitting elementsinclude, in its category, an element whose luminance is controlled bycurrent or voltage, and specifically include an inorganicelectroluminescent (EL) element, an organic EL element, and the like.Furthermore, a display medium whose contrast is changed by an electricaction, such as electronic ink, can be used.

The display device includes a panel in which the display element issealed, and a module in which an IC or the like including a controlleris mounted on the panel. The display device relates to one embodiment ofan element substrate before the display element is completed in amanufacturing process of the display device, and the element substrateis provided with a means for supplying current to the display element ineach of a plurality of pixels. Specifically, the element substrate maybe in a state after only a pixel electrode of the display element isformed, a state after a conductive film to be a pixel electrode isformed and before the conductive film is etched to form the pixelelectrode, or any of other states.

Note that a display device in this specification means an image displaydevice, a display device, or a light source (including a lightingdevice). Furthermore, the display device also includes the followingmodules in its category: a module to which a connector such as aflexible printed circuit (FPC), a tape automated bonding (TAB) tape, ora tape carrier package (TCP) is attached; a module having a TAB tape ora TCP at the tip of which a printed wiring board is provided; and amodule in which an integrated circuit (IC) is directly mounted on adisplay element by a chip on glass (COG) method.

The appearance and a cross section of a liquid crystal display panel,which is one embodiment of a semiconductor device, will be describedwith reference to FIGS. 14A1, 14A2 and 14B. FIGS. 14A1 and 14A2 are eacha plan view of a panel in which thin film transistors 4010 and 4011 anda liquid crystal element 4013 are sealed between a first substrate 4001and a second substrate 4006 with a sealant 4005. FIG. 14B is across-sectional view taken along line M-N of FIGS. 14A1 and 14A2.

The sealant 4005 is provided so as to surround a pixel portion 4002 anda scan line driver circuit 4004 that are provided over the firstsubstrate 4001. The second substrate 4006 is provided over the pixelportion 4002 and the scan line driver circuit 4004. Therefore, the pixelportion 4002 and the scan line driver circuit 4004 are sealed togetherwith a liquid crystal layer 4008, by the first substrate 4001, thesealant 4005, and the second substrate 4006. A signal line drivercircuit 4003 that is formed using a single crystal semiconductor film ora polycrystalline semiconductor film over a substrate separatelyprepared is mounted in a region different from the region surrounded bythe sealant 4005 over the first substrate 4001.

Note that there is no particular limitation on the connection method ofthe driver circuit which is separately formed, and a COG method, a wirebonding method, a TAB method, or the like can be used. FIG. 14A1illustrates an example of mounting the signal line driver circuit 4003by a COG method, and FIG. 14A2 illustrates an example of mounting thesignal line driver circuit 4003 by a TAB method.

The pixel portion 4002 and the scan line driver circuit 4004 providedover the first substrate 4001 each include a plurality of thin filmtransistors. FIG. 14B illustrates the thin film transistor 4010 includedin the pixel portion 4002 and the thin film transistor 4011 included inthe scan line driver circuit 4004 as an example. Insulating layers 4041,4020, 4042, and 4021 are provided over the thin film transistors 4010and 4011. Further, an insulating layer 4043 is provided over the firstsubstrate 4001, and an insulating layer 4044 and an insulating layer4045 are provided over the gate electrode layers of the thin filmtransistors. A source wiring 4046 is provided over the insulating layer4020 and connected to a source electrode or a drain electrode of thethin film transistor 4010 through a contact hole formed in theinsulating layer 4020 and the insulating layer 4041.

As the thin film transistors 4010 and 4011, the highly-reliable thinfilm transistor including an oxide semiconductor layer, which isdescribed in any of Embodiments 1 to 4, can be employed. In thisembodiment, the thin film transistors 4010 and 4011 are n-channel thinfilm transistors.

A conductive layer 4040 is provided over the insulating layer 4021,which overlaps with a channel formation region of an oxide semiconductorlayer in the thin film transistor 4011 for the driver circuit. Theconductive layer 4040 is provided in the position overlapping with thechannel formation region of the oxide semiconductor layer, whereby theamount of shift in the threshold voltage of the thin film transistor4011 before and after a BT test can be reduced. The potential of theconductive layer 4040 may be the same as or different from that of agate electrode layer of the thin film transistor 4011. The conductivelayer 4040 can also function as a second gate electrode layer.Alternatively, the potential of the conductive layer 4040 may be GND or0 V, or the conductive layer 4040 may be in a floating state.

Note that a thin film transistor manufactured in accordance with theprocess described in Embodiment 2 includes a highly purified oxidesemiconductor layer. Specifically, in order to prevent entry of animpurity (e.g., a hydrogen atom, a compound including a hydrogen atomsuch as H₂O, or a compound including a carbon atom), evacuation with acryopump or the like is performed at the time of forming the oxidesemiconductor layer. Further, the oxide semiconductor layer is subjectedto heat treatment for dehydration or dehydrogenation after itsformation. Furthermore, an oxide insulating film is formed in contactwith a region where a so-called back channel of the thin film transistoris formed, whereby impurities are diffused from the oxide semiconductorlayer into the oxide insulating film.

In addition, by providing the conductive layer 4040 in a positionoverlapping with the channel formation region, the thin film transistoris shielded from static electricity. When the thin film transistor isshielded from static electricity, the number of carriers due to staticelectricity can be reduced.

When the oxide semiconductor layer is highly purified and shielded fromstatic electricity, the carrier density of the oxide semiconductor layeris reduced. For example, the carrier density of the oxide semiconductorlayer can be suppressed to 1×10¹⁴/cm³ or lower. In this manner, by usingan oxide semiconductor layer with a suppressed carrier density for athin film transistor, the transistor can have small off current(I_(off)). Moreover, by applying the thin film transistor whose offcurrent (I_(off)) is suppressed to a display device, the display devicecan have low power consumption.

A pixel electrode layer 4030 included in the liquid crystal element 4013is electrically connected to the thin film transistor 4010. A counterelectrode layer 4031 of the liquid crystal element 4013 is formed on thesecond substrate 4006. A portion where the pixel electrode layer 4030,the counter electrode layer 4031, and the liquid crystal layer 4008overlap with one another corresponds to the liquid crystal element 4013.Note that the pixel electrode layer 4030 and the counter electrode layer4031 are provided with an insulating layer 4032 and an insulating layer4033, respectively, each of which functions as an alignment film. Theliquid crystal layer 4008 is sandwiched between the pixel electrodelayer 4030 and the counter electrode layer 4031 with the insulatinglayers 4032 and 4033 interposed therebetween.

Note that as the first substrate 4001 and the second substrate 4006, alight-transmitting substrate can be employed, and glass, ceramic, orplastic can be used. As plastic, a fiberglass-reinforced plastics (FRP)plate, a polyvinyl fluoride (PVF) film, a polyester film, or an acrylicresin film can be used.

A spacer 4035 is a columnar spacer obtained by selective etching of aninsulating film and is provided in order to control the distance (a cellgap) between the pixel electrode layer 4030 and the counter electrodelayer 4031. Note that a spherical spacer may be used as the spacer 4035.The counter electrode layer 4031 is electrically connected to a commonpotential line provided over the same substrate as the thin filmtransistor 4010. With the use of the common connection portion, thecounter electrode layer 4031 can be electrically connected to the commonpotential line through conductive particles provided between the pair ofsubstrates. Note that the conductive particles are included in thesealant 4005.

Alternatively, liquid crystal exhibiting a blue phase for which analignment film is unnecessary may be used. A blue phase is one of theliquid crystal phases, which is generated just before a cholestericphase changes into an isotropic phase while temperature of cholestericliquid crystal is raised. Since the blue phase is generated within anarrow range of temperature, a liquid crystal composition including achiral agent at 5 weight % or more is used for the liquid crystal layer4008 in order to improve the temperature range. The liquid crystalcomposition which includes liquid crystal exhibiting a blue phase and achiral agent has short response time of 1 msec or less, has opticalisotropy, which makes the alignment treatment unneeded, and has a smallviewing angle dependence.

An embodiment of the present invention can also be applied to atransflective liquid crystal display device, in addition to atransmissive liquid crystal display device.

An example of the liquid crystal display device is described in which apolarizing plate is provided on the outer surface of the substrate (onthe viewer side) and a coloring layer (color filter) and an electrodelayer used for a display element are provided on the inner surface ofthe substrate in this order; however, the polarizing plate may beprovided on the inner surface of the substrate. The stacked-layerstructure of the polarizing plate and the coloring layer is not limitedto that of this embodiment and may be set as appropriate in accordancewith materials of the polarizing plate and the coloring layer orconditions of the manufacturing process.

Over the thin film transistor 4011, the insulating layer 4041 is formedas a protective insulating film to be in contact with the semiconductorlayer including the channel formation region. The insulating layer 4041may be formed using a material and a method similar to those of theinsulating layer 208 described in Embodiments 1 and 2, for example.Here, a silicon oxide film is formed as the insulating layer 4041 by asputtering method in a manner similar to that of Embodiments 1 and 2.

In order to reduce surface roughness due to the thin film transistors,the insulating layer 4021 functioning as a planarization insulating filmis formed over the insulating layer 4020. As the insulating layer 4021,an organic material having heat resistance such as polyimide, an acrylicresin, a benzocyclobutene-based resin, polyamide, or an epoxy resin canbe used. Other than such organic materials, it is also possible to use alow-dielectric constant material (a low-k material), a siloxane-basedresin, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), orthe like. Note that the insulating layer 4021 may be formed by stackinga plurality of insulating films formed using any of these materials.

Note that a siloxane-based resin is a resin which is formed from asiloxane-based material as a starting material and has a Si—O—Si bond.The siloxane-based resin may include as a substituent an organic group(e.g., an alkyl group or an aryl group) or a fluoro group. The organicgroup may include a fluoro group.

There is no particular limitation on the method for forming theinsulating layer 4021, and the insulating layer 4021 can be formed,depending on the material, by a sputtering method, an SOG method, spincoating, dipping, spray coating, a droplet discharge method (such as aninkjet method, screen printing, or offset printing), or with a tool suchas a doctor knife, a roll coater, a curtain coater, or a knife coater.When a baking step of the insulating layer 4021 also serves as theannealing step of the semiconductor layer, the semiconductor device canbe manufactured efficiently.

The pixel electrode layer 4030 and the counter electrode layer 4031 canbe formed using a light-transmitting conductive material such as indiumoxide including tungsten oxide, indium zinc oxide including tungstenoxide, indium oxide including titanium oxide, indium tin oxide includingtitanium oxide, indium tin oxide (hereinafter referred to as ITO),indium zinc oxide, or indium tin oxide to which silicon oxide is added.

A conductive composition including a conductive high molecule (alsoreferred to as a conductive polymer) can be used for the pixel electrodelayer 4030 and the counter electrode layer 4031. A pixel electrodeformed using the conductive composition preferably has a sheetresistance of 10000 ohms per square or less and a light transmittance of70% or higher at a wavelength of 550 nm. Furthermore, the resistivity ofthe conductive high molecule included in the conductive composition ispreferably 0.1 Ω·cm or lower.

As the conductive high molecule, a so-called it-electron conjugatedconductive polymer can be used. For example, it is possible to usepolyaniline or a derivative thereof, polypyrrole or a derivativethereof, polythiophene or a derivative thereof; or a copolymer of two ormore kinds of them.

A variety of signals and potentials are supplied from an FPC 4018 to thesignal line driver circuit 4003 that is formed separately, and the scanline driver circuit 4004 or the pixel portion 4002.

A connection terminal electrode 4015 is formed from the same conductivefilm as the pixel electrode layer 4030 included in the liquid crystalelement 4013, and a terminal electrode 4016 is formed from the sameconductive film as source electrode layers and drain electrode layers ofthe thin film transistors 4010 and 4011.

The connection terminal electrode 4015 is electrically connected to aterminal included in the FPC 4018 through an anisotropic conductive film4019.

FIGS. 14A1, 14A2 and 14B illustrate an example in which the signal linedriver circuit 4003 is formed separately and mounted on the firstsubstrate 4001; however, this embodiment is not limited to thisstructure. The scan line driver circuit may be separately formed andthen mounted, or only part of the signal line driver circuit or part ofthe scan line driver circuit may be separately formed and then mounted.

FIG. 23 illustrates an example of a liquid crystal display module whichis formed as a semiconductor device with the use of a TFT substrate 2600manufactured in accordance with the manufacturing method disclosed inthis specification.

FIG. 23 illustrates an example of a liquid crystal display module, inwhich the TFT substrate 2600 and a counter substrate 2601 are bonded toeach other with a sealant 2602, and a pixel portion 2603 including a TFTor the like, a display element 2604 including a liquid crystal layer,and a coloring layer 2605 are provided between the substrates to form adisplay region. The coloring layer 2605 is necessary to perform colordisplay. In the case of the RGB system, respective coloring layerscorresponding to colors of red, green, and blue are provided forrespective pixels. Polarizing plates 2606 and 2607 and a diffusion plate2613 are provided outside the TFT substrate 2600 and the countersubstrate 2601. A light source includes a cold cathode tube 2610 and areflection plate 2611. A circuit board 2612 is connected to a wiringcircuit portion 2608 of the TFT substrate 2600 through a flexible wiringboard 2609 and includes an external circuit such as a control circuit ora power supply circuit. The polarizing plate and the liquid crystallayer may be stacked with a retardation plate interposed therebetween.

For the liquid crystal display module, a twisted nematic (TN) mode, anin-plane-switching (IPS) mode, a fringe field switching (FFS) mode, amulti-domain vertical alignment (MVA) mode, a patterned verticalalignment (PVA) mode, an axially symmetric aligned micro-cell (ASM)mode, an optically compensated birefringence (OCB) mode, a ferroelectricliquid crystal (FLC) mode, an antiferroelectric liquid crystal (AFLC)mode, or the like can be used.

Through the above process, a highly reliable liquid crystal displaypanel as a semiconductor device can be manufactured.

By manufacturing the above liquid crystal display device with the use ofthe display device described in any of Embodiments 1 to 5, a gate wiringor a source wiring can be formed using a conductive material includingCu; accordingly, increase in wiring resistance can be prevented.Consequently, high speed operation and low power consumption of theabove liquid crystal display device can be achieved, and thus the liquidcrystal display device can have a large-sized screen or a highdefinition screen.

This embodiment can be combined with any of the structures described inthe other embodiments as appropriate.

Embodiment 8

In this embodiment, an example of electronic paper will be described asone embodiment of a semiconductor device.

The thin film transistor of Embodiment 1 may be used for electronicpaper in which electronic ink is driven by an element electricallyconnected to a switching element. The electronic paper is also referredto as an electrophoretic display device (an electrophoretic display) andis advantageous in that it has the same level of readability as plainpaper, it has lower power consumption than other display devices, and itcan be made thin and lightweight.

Electrophoretic displays can have various modes. An electrophoreticdisplay includes a plurality of microcapsules dispersed in a solvent ora solute, and each microcapsule includes first particles which arepositively charged and second particles which are negatively charged. Byapplying an electric field to the microcapsules, the particles in themicrocapsules move in opposite directions and only the color of theparticles gathering on one side is displayed. Note that the firstparticles and the second particles each include a pigment and do notmove without an electric field. In addition, the first particles and thesecond particles have different colors (which may be colorless).

Thus, an electrophoretic display is a display that utilizes a so-calleddielectrophoretic effect by which a substance having a high dielectricconstant moves to a high electric field region.

A solution in which the above microcapsules are dispersed in a solventis called electronic ink. This electronic ink can be printed on asurface of glass, plastic, cloth, paper, or the like. Furthermore, byusing a color filter or particles that have a pigment, color display canalso be achieved.

In addition, if a plurality of the above microcapsules is arranged asappropriate over an active matrix substrate so as to be interposedbetween two electrodes, an active matrix display device can be completedand display can be performed by application of an electric field to themicrocapsules. For example, the active matrix substrate obtained usingthe thin film transistor described in Embodiment 1 can be used.

Note that the first particles and the second particles in themicrocapsules may be formed using a single material selected from aconductive material, an insulating material, a semiconductor material, amagnetic material, a liquid crystal material, a ferroelectric material,an electroluminescent material, an electrochromic material, and amagnetophoretic material, or formed using a composite material of any ofthese materials.

FIG. 22 illustrates active matrix electronic paper as an example of asemiconductor device. A thin film transistor 581 used for thesemiconductor device can be manufactured in a manner similar to that ofthe thin film transistors described in Embodiments 1 and 2 and is ahighly reliable thin film transistor including an oxide semiconductorlayer.

The electronic paper in FIG. 22 is an example of a display device usinga twisting ball display system. The twisting ball display system refersto a method in which spherical particles each colored in black and whiteare arranged between a first electrode layer 587 and a second electrodelayer 588 which are electrode layers used for a display element, and apotential difference is generated between the first electrode layer andthe second electrode layer to control orientation of the sphericalparticles, so that display is performed.

The thin film transistor 581 formed over a substrate 580 is a thin filmtransistor having a bottom gate structure and is covered with aninsulating layer 583 which is in contact with the semiconductor layer.An insulating layer 591 is formed over the substrate 580, an insulatinglayer 592 and an insulating layer 582 are formed over the gate electrodeof the thin film transistor, and an insulating layer 597 and aninsulating layer 598 are formed over the insulating layer 583. Further,a source wiring 599 a and a source wiring 599 b are formed over theinsulating layer 583 and connected to a source electrode layer or adrain electrode layer of the thin film transistor 581 through a contacthole formed in the insulating layer 583 and the insulating layer 597.The source electrode layer or the drain electrode layer of the thin filmtransistor 581 is in contact with the first electrode layer 587 throughan opening formed in an insulating layer 585, whereby the thin filmtransistor 581 is electrically connected to the first electrode layer587. Spherical particles 589 are provided between the first electrodelayer 587 and the second electrode layer 588 formed on a substrate 596.Each of the spherical particles 589 includes a black region 590 a, awhite region 590 b, and a cavity 594 filled with liquid around the blackregion 590 a and the white region 590 b. A space around the sphericalparticles 589 is filled with a filler 595 such as a resin (see FIG. 22).The first electrode layer 587 corresponds to a pixel electrode, and thesecond electrode layer 588 corresponds to a common electrode. The secondelectrode layer 588 is electrically connected to a common potential lineprovided over the same substrate as the thin film transistor 581. Withthe use of a common connection portion, the second electrode layer 588can be electrically connected to the common potential line throughconductive particles provided between the pair of substrates.

Instead of the twisting ball, an electrophoretic element can be used. Amicrocapsule with a diameter of approximately 10 μm to 200 μm in whichtransparent liquid, positively-charged white microparticles, andnegatively-charged black microparticles are encapsulated, is used. Inthe microcapsule which is provided between the first electrode layer andthe second electrode layer, when an electric field is applied betweenthe first electrode layer and the second electrode layer, the whitemicroparticles and the black microparticles move to opposite sides fromeach other, so that white or black can be displayed. A display elementusing this principle is an electrophoretic display element and a deviceusing the electrophoretic display element is generally called electronicpaper. The electrophoretic display element has higher reflectance than aliquid crystal display element, and thus, an auxiliary light isunnecessary, power consumption is low, and a display portion can berecognized even in a dim environment. Moreover, even when power is notsupplied to the display portion, an image which has been displayed oncecan be maintained. Accordingly, a displayed image can be stored even ifa semiconductor device having a display function (which may be referredto simply as a display device or a semiconductor device provided with adisplay device) is disconnected from an electric wave source.

Through the above process, highly reliable electronic paper as asemiconductor device can be manufactured.

In the case where a thin film transistor in a pixel portion of the aboveelectronic paper is manufactured using any of methods for manufacturingthe thin film transistors described in Embodiments 1 to 5, displayunevenness due to variation in the threshold voltage of thin filmtransistors of respective pixels can be suppressed.

By manufacturing the above electronic paper with the use of the displaydevice described in any of Embodiments 1 to 3, a gate wiring or a sourcewiring can be formed using a conductive material including Cu;accordingly, increase in wiring resistance can be prevented.Consequently, high speed operation and low power consumption of theabove electronic paper can be achieved, and thus the electronic papercan have a large-sized screen or a high definition screen.

This embodiment can be combined with any of the structures described inthe other embodiments as appropriate.

Embodiment 9

An example of a light-emitting display device will be described as asemiconductor device. As a display element included in the displaydevice, a light-emitting element utilizing electroluminescence isdescribed here. Light-emitting elements utilizing electroluminescenceare classified according to whether a light-emitting material is anorganic compound or an inorganic compound. In general, the former isreferred to as an organic EL element and the latter is referred to as aninorganic EL element.

In an organic EL element, by application of voltage to a light-emittingelement, electrons and holes are separately injected from a pair ofelectrodes into a layer including a light-emitting organic compound, andcurrent flows. Then, the carriers (electrons and holes) recombine, sothat the light-emitting organic compound is excited. The light-emittingorganic compound returns to a ground state from the excited state,thereby emitting light. Owing to such a mechanism, this light-emittingelement is referred to as a current-excitation light-emitting element.

The inorganic EL elements are classified according to their elementstructures into a dispersion-type inorganic EL element and a thin-filminorganic EL element. A dispersion-type inorganic EL element has alight-emitting layer where particles of a light-emitting material aredispersed in a binder, and its light emission mechanism isdonor-acceptor recombination type light emission which utilizes a donorlevel and an acceptor level. A thin film inorganic EL element has astructure where a light-emitting layer is sandwiched between dielectriclayers, which are further sandwiched between electrodes, and its lightemission mechanism is localized type light emission that utilizesinner-shell electron transition of metal ions. Note that description ismade here using an organic EL element as a light-emitting element.

FIG. 16 illustrates an example of a pixel configuration as an example ofa semiconductor device, which can be driven by a digital time grayscalemethod.

The configuration and operation of a pixel which can be driven by adigital time grayscale method will be described. An example is describedhere in which one pixel includes two n-channel transistors using anoxide semiconductor layer in a channel formation region.

A pixel 6400 includes a switching transistor 6401, a driver transistor6402, a light-emitting element 6404, and a capacitor 6403. A gate of theswitching transistor 6401 is connected to a scan line 6406, a firstelectrode (one of a source electrode and a drain electrode) of theswitching transistor 6401 is connected to a signal line 6405, and asecond electrode (the other of the source electrode and the drainelectrode) of the switching transistor 6401 is connected to a gate ofthe driver transistor 6402. The gate of the driver transistor 6402 isconnected to a power supply line 6407 through the capacitor 6403, afirst electrode of the driver transistor 6402 is connected to the powersupply line 6407, and a second electrode of the driver transistor 6402is connected to a first electrode (a pixel electrode) of thelight-emitting element 6404. A second electrode of the light-emittingelement 6404 corresponds to a common electrode 6408. The commonelectrode 6408 is electrically connected to a common potential lineformed over the same substrate.

Note that the second electrode (the common electrode 6408) of thelight-emitting element 6404 is set to a low power supply potential. Thelow power supply potential is lower than a high power supply potentialwhich is supplied to the power supply line 6407 when the high powersupply potential is a reference. For example, GND and 0 V may be set asthe low power supply potential. The potential difference between thehigh power supply potential and the low power supply potential isapplied to the light-emitting element 6404 so that current flows throughthe light-emitting element 6404, whereby the light-emitting element 6404emits light. Thus, each potential is set so that the potentialdifference between the high power supply potential and the low powersupply potential is greater than or equal to forward threshold voltageof the light-emitting element 6404.

When the gate capacitance of the driver transistor 6402 is used as asubstitute for the capacitor 6403, the capacitor 6403 can be omitted.The gate capacitance of the driver transistor 6402 may be formed betweena channel region and a gate electrode.

Here, in the case of using a voltage-input voltage driving method, avideo signal is input to the gate of the driver transistor 6402 so thatthe driver transistor 6402 is sufficiently turned on or off. That is,the driver transistor 6402 operates in a linear region, and thus voltagehigher than the voltage of the power supply line 6407 is applied to thegate electrode of the driver transistor 6402. Note that voltage higherthan or equal to (power supply line voltage+V_(th) of the drivertransistor 6402) is applied to the signal line 6405.

In the case of using an analog grayscale method instead of the digitaltime grayscale method, the same pixel configuration as in FIG. 16 can beemployed by inputting signals in a different way.

In the case of using the analog grayscale method, voltage higher than orequal to (forward voltage of the light-emitting element 6404+V_(th) ofthe driver transistor 6402) is applied to the gate electrode of thedriver transistor 6402. The forward voltage of the light-emittingelement 6404 refers to voltage at which a desired luminance is obtained,and is higher than at least forward threshold voltage. By inputting avideo signal to enable the driver transistor 6402 to operate in asaturation region, current can be supplied to the light-emitting element6404. In order that the driver transistor 6402 can operate in thesaturation region, the potential of the power supply line 6407 is sethigher than a gate potential of the driver transistor 6402. Since thevideo signal is an analog signal, current according to the video signalflows in the light-emitting element 6404, and analog grayscale drivingcan be performed.

Note that the pixel configuration is not limited to that illustrated inFIG. 16. For example, the pixel illustrated in FIG. 16 can furtherinclude a switch, a resistor, a capacitor, a transistor, a logiccircuit, or the like.

Next, structures of the light-emitting element will be described withreference to FIGS. 17A to 17C. Here, a cross-sectional structure of apixel will be described by taking an n-channel driver TFT as an example.A driver TFT 7001, a driver TFT 7011, and a driver TFT 7021 used forsemiconductor devices illustrated in FIGS. 17A to 17C can bemanufactured in a manner similar to that of the thin film transistorsdescribed in Embodiments 1 and 2 and are highly reliable thin filmtransistors each including an oxide semiconductor layer.

In order to extract light emitted from the light-emitting element, atleast one of an anode and a cathode is required to transmit light. Athin film transistor and a light-emitting element are formed over asubstrate. A light-emitting element can have a top emission structure inwhich light emission is extracted through a surface opposite to thesubstrate; a bottom emission structure in which light emission isextracted 10 through a surface on the substrate side; or a dual emissionstructure in which light emission is extracted through the surfaceopposite to the substrate and the surface on the substrate side. Thepixel configuration can be applied to a light-emitting element havingany of these emission structures.

A light-emitting element having a bottom emission structure will bedescribed with reference to FIG. 17A.

FIG. 17A is a cross-sectional view of a pixel in the case where thedriver TFT 7011 is an n-channel TFT and light is emitted from alight-emitting element 7012 to a cathode 7013 side. In FIG. 17A, thecathode 7013 of the light-emitting element 7012 is formed over alight-transmitting conductive film 7017 which is electrically connectedto the driver TFT 7011, and an EL layer 7014 and an anode 7015 arestacked in this order over the cathode 7013. Further, an insulatinglayer 7031 is formed over a substrate, an insulating layer 7032 and aninsulating layer 7036 are formed over a gate electrode of the driver TFT7011, and insulating layers 7037, 7038, and 7039 are formed over asource electrode and a drain electrode of the driver TFT 7011. A sourcewiring 7018 a and a source wiring 7018 b are formed over the insulatinglayer 7038 and connected to the source electrode of the driver TFT 7011through a contact hole formed in the insulating layer 7037 and theinsulating layer 7038. Note that the light-transmitting conductive film7017 is electrically connected to the drain electrode of the driver TFT7011 through a contact hole formed in the insulating layers 7037, 7038,and 7039.

As the light-transmitting conductive film 7017, a light-transmittingconductive film such as a film of indium oxide including tungsten oxide,indium zinc oxide including tungsten oxide, indium oxide includingtitanium oxide, indium tin oxide including titanium oxide, indium tinoxide (hereinafter referred to as ITO), indium zinc oxide, or indium tinoxide to which silicon oxide is added can be used.

The cathode 7013 can be formed using various materials, and a materialhaving a relatively low work function, for example, an alkali metal suchas Li or Cs, an alkaline earth metal such as Mg, Ca, or Sr, an alloyincluding any of these (such as Mg:Ag or Al:Li), a rare earth metal suchas Yb or Er, or the like is preferable. In FIG. 17A, the thickness ofthe cathode 7013 is approximately a thickness that transmits light(preferably approximately 5 nm to 30 nm). For example, an aluminum filmhaving a thickness of 20 nm is used for the cathode 7013.

Note that the light-transmitting conductive film and the aluminum filmmay be stacked and selectively etched to form the light-transmittingconductive film 7017 and the cathode 7013; in this case, etching can beperformed using the same mask, which is preferable.

The peripheral portion of the cathode 7013 is covered with a partitionwall 7019. The partition wall 7019 is formed using an organic resin filmof polyimide, an acrylic resin, polyamide, an epoxy resin, or the like;an inorganic insulating film; or organic polysiloxane. It isparticularly preferable that the partition wall 7019 be formed using aphotosensitive resin material to have an opening over the cathode 7013so that a sidewall of the opening is formed as an inclined surface withcontinuous curvature. In the case where a photosensitive resin materialis used for the partition wall 7019, a step of forming a resist mask canbe omitted.

The EL layer 7014 formed over the cathode 7013 and the partition wall7019 may be formed as a single layer or a plurality of layers stacked.When the EL layer 7014 is formed as a plurality of layers, anelectron-injection layer, an electron-transport layer, a light-emittinglayer, a hole-transport layer, and a hole-injection layer are stacked inthis order over the cathode 7013. Note that not all of these layersother than the light-emitting layer need to be provided.

The stacking order is not limited to the above stacking order, and ahole-injection layer, a hole-transport layer, a light-emitting layer, anelectron-transport layer, and an electron-injection layer may be stackedin this order over the cathode 7013. However, when power consumption iscompared, an electron-injection layer, an electron-transport layer, alight-emitting layer, a hole-transport layer, and a hole-injection layerare preferably stacked in this order over the cathode 7013 because oflower power consumption.

For the anode 7015 formed over the EL layer 7014, various materials canbe used, and a material having a high work function such as titaniumnitride, ZrN, Ti, W, Ni, Pt, or Cr; or a light-transmitting conductivematerial such as ITO, IZO (indium oxide zinc oxide), or ZnO ispreferably used, for example. For a light-blocking film 7016 over theanode 7015, for example, a metal which blocks light, a metal whichreflects light, or the like is used. In this embodiment, an ITO film isused for the anode 7015, and a Ti film is used for the light-blockingfilm 7016.

The light-emitting element 7012 corresponds to a region where the ELlayer 7014 is sandwiched between the cathode 7013 and the anode 7015. Inthe case of the element structure illustrated in FIG. 17A, light isemitted from the light-emitting element 7012 to the cathode 7013 side asindicated by an arrow.

Note that an example in which a light-transmitting conductive film isused as a gate electrode is illustrated in FIG. 17A, and light isemitted from the light-emitting element 7012 through a color filterlayer 7033.

The color filter layer 7033 is formed by a droplet discharge method suchas an inkjet method, a printing method, an etching method using aphotolithography technique, or the like.

The color filter layer 7033 is covered with an overcoat layer 7034, andalso covered with a protective insulating layer 7035. Note that theovercoat layer 7034 with a thin thickness is illustrated in FIG. 17A;however, the overcoat layer 7034 has a function to planarize a surfacewith unevenness due to the color filter layer 7033.

A contact hole which is formed in the protective insulating layer 7035,the overcoat layer 7034, and insulating layers 7037, 7038, and 7039 andreaches the drain electrode is provided in a position overlapping withthe partition wall 7019. In FIG. 17A, the contact hole which reaches thedrain electrode and the partition wall 7019 overlap with each other,whereby the aperture ratio can be improved.

Next, a light-emitting element having a dual emission structure will bedescribed with reference to FIG. 17B.

In FIG. 17B, a cathode 7023 of a light-emitting element 7022 is formedover a light-transmitting conductive film 7027 which is electricallyconnected to the driver TFT 7021, and an EL layer 7024 and an anode 7025are stacked in this order over the cathode 7023. Further, an insulatinglayer 7041 is formed over a substrate, an insulating layer 7042 and aninsulating layer 7046 are formed over a gate electrode of the driver TFT7021, and insulating layers 7047, 7048, and 7049 are formed over asource electrode and a drain electrode of the driver TFT 7021. A sourcewiring 7028 a and a source wiring 7028 b are formed over the insulatinglayer 7048 and connected to the source electrode of the driver TFT 7021through a contact hole formed in the insulating layer 7047 and theinsulating layer 7048. Note that the light-transmitting conductive film7027 is electrically connected to the drain electrode of the driver TFT7021 through a contact hole formed in the insulating layers 7047, 7048,and 7049.

For the light-transmitting conductive film 7027, a light-transmittingconductive film of indium oxide including tungsten oxide, indium zincoxide including tungsten oxide, indium oxide including titanium oxide,indium tin oxide including titanium oxide, indium tin oxide (hereinafterreferred to as ITO), indium zinc oxide, indium tin oxide to whichsilicon oxide is added, or the like can be used.

The cathode 7023 can be formed using a variety of materials, and amaterial having a relatively low work function, for example, an alkalimetal such as Li or Cs; an alkaline earth metal such as Mg, Ca, or Sr;an alloy including any of these (such as Mg:Ag or Al:Li); a rare earthmetal such as Yb or Er; or the like is preferable. In this embodiment,the thickness of the cathode 7023 is approximately a thickness thattransmits light (preferably approximately 5 nm to 30 nm). For example,an aluminum film having a thickness of 20 nm is used for the cathode7023.

Note that the light-transmitting conductive film and the aluminum filmmay be stacked and selectively etched to form the light-transmittingconductive film 7027 and the cathode 7023. In this case, etching can beperformed using the same mask, which is preferable.

The peripheral portion of the cathode 7023 is covered with a partitionwall 7029. The partition wall 7029 is formed using an organic resin filmof polyimide, an acrylic resin, polyamide, an epoxy resin, or the like;an inorganic insulating film; or organic polysiloxane. It isparticularly preferable that the partition wall 7029 be formed using aphotosensitive resin material to have an opening over the cathode 7023so that a sidewall of the opening is formed as an inclined surface withcontinuous curvature. In the case where a photosensitive resin materialis used for the partition wall 7029, a step of forming a resist mask canbe omitted.

The EL layer 7024 formed over the cathode 7023 and the partition wall7029 may be formed as a single layer or a plurality of layers stacked.When the EL layer 7024 is formed as a plurality of layers, anelectron-injection layer, an electron-transport layer, a light-emittinglayer, a hole-transport layer, and a hole-injection layer are stacked inthis order over the cathode 7023. Note that not all of these layersother than the light-emitting layer need to be provided.

The stacking order is not limited to the above stacking order, and ahole-injection layer, a hole-transport layer, a light-emitting layer, anelectron-transport layer, and an electron-injection layer may be stackedin this order over the cathode 7023. However, when power consumption iscompared, an electron-injection layer, an electron-transport layer, alight-emitting layer, a hole-transport layer, and a hole-injection layerare preferably stacked in this order over the cathode 7023 because oflower power consumption.

For the anode 7025 formed over the EL layer 7024, various materials canbe used, and a material having a relatively high work function, forexample, a light-transmitting conductive material such as ITO, IZO, orZnO is preferable. In this embodiment, an ITO film including siliconoxide is used for the anode 7025.

The light-emitting element 7022 corresponds to a region where the ELlayer 7024 is sandwiched between the cathode 7023 and the anode 7025. Inthe case of the element structure illustrated in FIG. 17B, light isemitted from the light-emitting element 7022 to both the anode 7025 sideand the cathode 7023 side as indicated by arrows.

Note that an example in which a light-transmitting conductive film isused as the gate electrode is illustrated in FIG. 17B, and light isemitted from the light-emitting element 7022 to the cathode 7023 sidethrough a color filter layer 7043.

The color filter layer 7043 is formed by a droplet discharge method suchas an inkjet method, a printing method, an etching method using aphotolithography technique, or the like.

The color filter layer 7043 is covered with an overcoat layer 7044, andalso covered with a protective insulating layer 7045.

A contact hole which is formed in the protective insulating layer 7045,the overcoat layer 7044, and the insulating layers 7047, 7048, and 7049and reaches the drain electrode is provided in a position overlappingwith the partition wall 7029. The contact hole which reaches the drainelectrode and the partition wall 7029 overlap with each other, wherebythe aperture ratio on the anode 7025 side can be substantially the sameas the aperture ratio on the cathode 7023 side.

Note that when a light-emitting element having a dual emission structureis used and full color display is performed on both display surfaces,light from the anode 7025 side does not pass through the color filterlayer 7043; therefore, a sealing substrate provided with another colorfilter layer is preferably provided over the anode 7025.

Next, a light-emitting element having a top emission structure will bedescribed with reference to FIG. 17C.

FIG. 17C is a cross-sectional view of a pixel in the case where thedriver TFT 7001 is an n-channel TFT and light is emitted from alight-emitting element 7002 to an anode 7005 side. In FIG. 17C, acathode 7003 of the light-emitting element 7002 which is electricallyconnected to the driver TFT 7001 is formed, and an EL layer 7004 and theanode 7005 are stacked in this order over the cathode 7003. Further, aninsulating layer 7051 is formed over a substrate, an insulating layer7052 and an insulating layer 7056 are formed over a gate electrode ofthe driver TFT 7001, and insulating layers 7057, 7058, and 7059 areformed over a source electrode and a drain electrode of the driver TFT7001. A source wiring 7008 a and a source wiring 7008 b are formed overthe insulating layer 7058 and connected to the source electrode of thedriver TFT 7001 through a contact hole formed in the insulating layer7057 and the insulating layer 7058. Note that the cathode 7003 iselectrically connected to the drain electrode of the driver TFT 7001through the contact hole formed in the insulating layers 7057, 7058, and7059.

The cathode 7003 can be formed using a variety of materials, and amaterial having a relatively low work function, for example, an alkalimetal such as Li or Cs; an alkaline earth metal such as Mg, Ca, or Sr;an alloy including any of these (such as Mg:Ag or Al:Li); a rare earthmetal such as Yb or Er; or the like is preferable.

The peripheral portion of the cathode 7003 is covered with a partitionwall 7009. The partition wall 7009 is formed using an organic resin filmof polyimide, an acrylic resin, polyamide, an epoxy resin, or the like;an inorganic insulating film; or organic polysiloxane. It isparticularly preferable that the partition wall 7009 be formed using aphotosensitive resin material to have an opening over the cathode 7003so that a sidewall of the opening is formed as an inclined surface withcontinuous curvature. In the case where a photosensitive resin materialis used for the partition wall 7009, a step of forming a resist mask canbe omitted.

The EL layer 7004 which is formed over the cathode 7003 and thepartition wall 7009 may be formed using a single layer or a plurality oflayers stacked. When the EL layer 7004 is formed using a plurality oflayers, an electron-injection layer, an electron-transport layer, alight-emitting layer, a hole-transport layer, and a hole-injection layerare stacked in this order over the cathode 7003. Note that not all ofthese layers other than the light-emitting layer need to be provided.

The stacking order is not limited to the above stacking order, and ahole-injection layer, a hole-transport layer, a light-emitting layer, anelectron-transport layer, and an electron-injection layer may be stackedin this order over the cathode 7003. In the case where these layers arestacked in this order, the cathode 7003 functions as an anode.

In FIG. 17C, a hole-injection layer, a hole-transport layer, alight-emitting layer, an electron-transport layer, and anelectron-injection layer are stacked in this order over a stacked filmin which a Ti film, an aluminum film, and a Ti film are formed in thisorder, and thereover, a stacked layer of a Mg:Ag alloy thin film and anITO film is formed.

However, when power consumption is compared, an electron-injectionlayer, an electron-transport layer, a light-emitting layer, ahole-transport layer, and a hole-injection layer are preferably stackedin this order over the cathode 7003 because of lower power consumption.

The anode 7005 is formed using a light-transmitting conductive materialwhich transmits light, and for example, a light-transmitting conductivefilm of indium oxide including tungsten oxide, indium zinc oxideincluding tungsten oxide, indium oxide including titanium oxide, indiumtin oxide including titanium oxide, indium tin oxide, indium zinc oxide,indium tin oxide to which silicon oxide is added, or the like may beused.

The light-emitting element 7002 corresponds to a region where the ELlayer 7004 is sandwiched between the cathode 7003 and the anode 7005. Inthe case of the pixel illustrated in FIG. 17C, light is emitted from thelight-emitting element 7002 to the anode 7005 side as indicated byarrows.

In FIG. 17C, the drain electrode of the TFT 7001 is electricallyconnected to the cathode 7003 through a contact hole formed in theinsulating layers 7057, 7058, and 7059. A planarization insulating layer7053 can be formed using a resin material such as polyimide, an acrylicresin, a benzocyclobutene-based resin, polyamide, or an epoxy resin. Inaddition to such resin materials, it is also possible to use alow-dielectric constant material (a low-k material), a siloxane-basedresin, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), orthe like. Note that the planarization insulating layer 7053 may beformed by stacking a plurality of insulating films formed using any ofthese materials. There is no particular limitation on the method forforming the planarization insulating layer 7053, and the planarizationinsulating layer 7053 can be formed, depending on the material, by amethod such as a sputtering method, an SOG method, spin coating,dipping, spray coating, or a droplet discharge method (such as an inkjetmethod, screen printing, or offset printing), or with a tool such as adoctor knife, a roll coater, a curtain coater, or a knife coater. Inaddition, an insulating layer 7055 is preferably provided over theplanarization insulating layer 7053.

The partition wall 7009 is provided so as to insulate the cathode 7003and a cathode of an adjacent pixel. The partition wall 7009 is formedusing an organic resin film of polyimide, an acrylic resin, polyamide,an epoxy resin, or the like; an inorganic insulating film; or organicpolysiloxane. It is particularly preferable that the partition wall 7009be formed using a photosensitive resin material to have an opening overthe cathode 7003 so that a sidewall of the opening is formed as aninclined surface with continuous curvature. In the case where aphotosensitive resin material is used for the partition wall 7009, astep of forming a resist mask can be omitted.

In the structure of FIG. 17C, when full color display is performed, forexample, the light-emitting element 7002 is used as a greenlight-emitting element, one of adjacent light-emitting elements is usedas a red light-emitting element, and the other is used as a bluelight-emitting element. Alternatively, a light-emitting display devicecapable of full color display may be manufactured using four kinds oflight-emitting elements, which include white light-emitting elements aswell as three kinds of light-emitting elements.

In the structure of FIG. 17C, a light-emitting display device capable offull color display may be manufactured in such a manner that all of aplurality of light-emitting elements which is arranged is whitelight-emitting elements and a sealing substrate having a color filter orthe like is provided over the light-emitting element 7002. A materialwhich exhibits a single color such as white is formed and combined witha color filter or a color conversion layer, whereby full color displaycan be performed.

Needless to say, display of monochromatic light emission may beperformed. For example, a lighting device may be formed with the use ofwhite light emission, or an area-color light-emitting device may beformed with the use of a single color light emission.

If necessary, an optical film such as a polarizing film including acircularly polarizing plate may be provided.

Although an organic EL element is described here as a light-emittingelement, an inorganic EL element can also be provided as alight-emitting element.

Note that the example is described in which a thin film transistor (adriver TFT) which controls the driving of a light-emitting element iselectrically connected to the light-emitting element; however, astructure may be employed in which a TFT for current control isconnected between the driver TFT and the light-emitting element.

When a light-emitting element and a partition wall are not provided, oneembodiment of the present invention can also be applied to a liquidcrystal display device. The case of a liquid crystal display device willbe described in FIG. 37.

The case where a driver TFT 7061 is an n-channel TFT is described. InFIG. 37, a light-transmitting conductive film 7067 which is electricallyconnected to the driver TFT 7061 is provided. Further, an insulatinglayer 7071 is formed over a substrate, an insulating layer 7072 and aninsulating layer 7076 are formed over a gate electrode of the driver TFT7061, and insulating layers 7077, 7078, and 7079 are formed over asource electrode and a drain electrode of the driver TFT 7061. A sourcewiring 7068 a and a source wiring 7068 b are formed over the insulatinglayers 7077 and 7078 and connected to the source electrode of the driverTFT 7061 through a contact hole formed in the insulating layer 7078 andthe insulating layer 7077. The light-transmitting conductive film 7067is electrically connected to the drain electrode of the driver TFT 7061through a contact hole formed in the insulating layers 7077, 7078, and7079.

As the light-transmitting conductive film 7067, a light-transmittingconductive film of indium oxide including tungsten oxide, indium zincoxide including tungsten oxide, indium oxide including titanium oxide,indium tin oxide including titanium oxide, indium tin oxide (hereinafterreferred to as ITO), indium zinc oxide, indium tin oxide to whichsilicon oxide is added, or the like can be used.

Note that in FIG. 37, light is emitted from a backlight or the likethrough a color filter layer 7063. The color filter layer 7063 is formedby a droplet discharge method such as an inkjet method, a printingmethod, an etching method using a photolithography technique, or thelike.

The color filter layer 7063 is covered with an overcoat layer 7064, andalso covered with a protective insulating layer 7065. Note that theovercoat layer 7064 with a thin thickness is illustrated in FIG. 37;however, the overcoat layer 7064 has a function to planarize a surfacewith unevenness due to the color filter layer 7063.

A structure in which a liquid crystal layer is provided over thelight-transmitting conductive film 7067 can be applied to a liquidcrystal display device.

Next, the appearance and a cross section of a light-emitting displaypanel (also referred to as a light-emitting panel), which is oneembodiment of the semiconductor device, will be described with referenceto FIGS. 15A and 15B. FIG. 15A is a plan view of a panel in which a thinfilm transistor and a light-emitting element formed over a firstsubstrate are sealed between the first substrate and a second substratewith a sealant. FIG. 15B is a cross-sectional view taken along line H-Iof FIG. 15A.

A sealant 4505 is provided to surround a pixel portion 4502, a signalline driver circuit 4503 a, a signal line driver circuit 4503 b, a scanline driver circuit 4504 a, and a scan line driver circuit 4504 b, whichare provided over a first substrate 4501. In addition, a secondsubstrate 4506 is provided over the pixel portion 4502, the signal linedriver circuits 4503 a and 4503 b, and the scan line driver circuits4504 a and 4504 b. Accordingly, the pixel portion 4502, the signal linedriver circuits 4503 a and 4503 b, and the scan line driver circuits4504 a and 4504 b are sealed together with a filler 4507, by the firstsubstrate 4501, the sealant 4505, and the second substrate 4506. It ispreferable that a display device be thus packaged (sealed) with aprotective film (such as a bonding film or an ultraviolet curable resinfilm) or a cover material with high air-tightness and littledegasification so that the display device is not exposed to the outsideair.

The pixel portion 4502, the signal line driver circuits 4503 a and 4503b, and the scan line driver circuits 4504 a and 4504 b formed over thefirst substrate 4501 each include a plurality of thin film transistors,and a thin film transistor 4510 included in the pixel portion 4502 and athin film transistor 4509 included in the signal line driver circuit4503 a are illustrated as an example in FIG. 15B. Insulating layers4541, 4542, and 4543 are provided over the thin film transistors 4509and 4510. An insulating layer 4544 is provided over the thin filmtransistor 4510. Further, an insulating layer 4545 is provided over thefirst substrate 4501, and an insulating layer 4546 and an insulatinglayer 4547 are provided over gate electrode layers of the thin filmtransistors. A source wiring 4548 is provided over the insulating layer4542 and connected to a source electrode layer or a drain electrodelayer of the thin film transistor 4510 through a contact hole formed inthe insulating layer 4541 and the insulating layer 4542.

As the thin film transistors 4509 and 4510, the highly reliable thinfilm transistor including an oxide semiconductor layer, which isdescribed in any of Embodiments 1 to 3, can be employed. In thisembodiment, the thin film transistors 4509 and 4510 are n-channel thinfilm transistors.

A conductive layer 4540 is provided over an insulating layer 4543 so asto overlap with a channel formation region of the oxide semiconductorlayer of the thin film transistor 4509 for the driver circuit. When theconductive layer 4540 is provided in a position overlapping with thechannel formation region of the oxide semiconductor layer, the amount ofshift in the threshold voltage of the thin film transistor 4509 beforeand after a BT test can be reduced. The conductive layer 4540 may have apotential which is the same as or different from that of the gateelectrode layer of the thin film transistor 4509, and can function as asecond gate electrode layer. The potential of the conductive layer 4540may be GND or 0 V, or the conductive layer 4540 may be in a floatingstate.

In the thin film transistors 4509 and 4510, the insulating layer 4541 isformed as a protective insulating film to be in contact with thesemiconductor layers including channel formation regions. The insulatinglayer 4541 may be formed using a material and a method similar to thoseof the insulating layer 208 described in Embodiment 1. In addition, inorder to reduce surface roughness due to a thin film transistor, thethin film transistor 4510 is covered with the insulating layer 4544functioning as a planarization insulating film. Here, a silicon oxidefilm is formed as the insulating layer 4541 by a sputtering method in amanner similar to that of the insulating layer 208 described inEmbodiment 1.

Further, the insulating layer 4544 is formed as the planarizationinsulating film. The insulating layer 4544 may be formed using amaterial and a method similar to those of the insulating layer 4021described in Embodiment 7. Here, an acrylic resin is used for theinsulating layer 4544.

Reference numeral 4511 denotes a light-emitting element, and a firstelectrode layer 4517 that is a pixel electrode included in thelight-emitting element 4511 is electrically connected to the sourceelectrode or the drain electrode of the thin film transistor 4510. Notethat a structure of the light-emitting element 4511 is not limited tothe structure described in this embodiment, which is a stacked-layerstructure of the first electrode layer 4517, an electroluminescent layer4512, and a second electrode layer 4513. The structure of thelight-emitting element 4511 can be changed as appropriate, depending onthe direction in which light is extracted from the light-emittingelement 4511, or the like.

A partition wall 4520 is formed using an organic resin film, aninorganic insulating film, or organic polysiloxane. It is particularlypreferable that the partition wall 4520 be formed using a photosensitivematerial to have an opening over the first electrode layer 4517 so thata sidewall of the opening is formed as an inclined surface withcontinuous curvature.

The electroluminescent layer 4512 may be formed as a single layer or aplurality of layers stacked.

A protective film may be formed over the second electrode layer 4513 andthe partition wall 4520 in order to prevent oxygen, hydrogen, moisture,carbon dioxide, or the like from entering the light-emitting element4511. As the protective film, a silicon nitride film, a silicon nitrideoxide film, a DLC film, or the like can be formed.

A variety of signals and potentials are supplied to the signal linedriver circuits 4503 a and 4503 b, the scan line driver circuits 4504 aand 4504 b, or the pixel portion 4502 from an FPC 4518 a and an FPC 4518b.

A connection terminal electrode 4515 is formed from the same conductivefilm as the first electrode layer 4517 included in the light-emittingelement 4511, and a terminal electrode 4516 is formed from the sameconductive film as source electrodes and drain electrodes included inthe thin film transistors 4509 and 4510.

The connection terminal electrode 4515 is electrically connected to aterminal of the FPC 4518 a through an anisotropic conductive film 4519.

The second substrate located in the direction in which light isextracted from the light-emitting element 4511 needs to have alight-transmitting property. In that case, a light-transmitting materialsuch as a glass plate, a plastic plate, a polyester film, or an acrylicfilm is used.

As the filler 4507, an ultraviolet curable resin or a thermosettingresin can be used, in addition to an inert gas such as nitrogen orargon. For example, polyvinyl chloride (PVC), an acrylic resin,polyimide, an epoxy resin, a silicone resin, polyvinyl butyral (PVB), oran ethylene-vinyl acetate copolymer (EVA) can be used. For example,nitrogen may be used for the filler.

If needed, an optical film such as a polarizing plate, a circularlypolarizing plate (including an elliptically polarizing plate), aretardation plate (a quarter-wave plate or a half-wave plate), or acolor filter may be provided as appropriate on a light-emitting surfaceof the light-emitting element. Furthermore, the polarizing plate or thecircularly polarizing plate may be provided with an anti-reflectionfilm. For example, anti-glare treatment by which reflected light can bediffused by projections and depressions on the surface so as to reducethe glare can be performed.

The signal line driver circuits 4503 a and 4503 b and the scan linedriver circuits 4504 a and 4504 b may be mounted as driver circuitsformed using a single crystal semiconductor film or a polycrystallinesemiconductor film over a substrate separately prepared. Alternatively,only the signal line driver circuits or part thereof, or only the scanline driver circuits or part thereof may be separately formed andmounted. This embodiment is not limited to the structure illustrated inFIGS. 15A and 15B.

Through the above process, a highly reliable light-emitting displaydevice (display panel) as a semiconductor device can be manufactured.

By manufacturing the above light-emitting display device with the use ofthe display device described in any of Embodiments 1 to 5, a gate wiringor a source wiring can be formed using a conductive material includingCu; accordingly, increase in wiring resistance can be prevented.Consequently, high speed operation and low power consumption of theabove light-emitting display device can be achieved, and thus thelight-emitting display device can have a large-sized screen or a highdefinition screen.

This embodiment can be combined with any of the structures described inthe other embodiments as appropriate.

Embodiment 10

A semiconductor device disclosed in this specification can be applied toelectronic paper. Electronic paper can be used for electronic appliancesin a variety of fields as long as they can display data. For example,electronic paper can be applied to an electronic book reader (an e-bookreader), a poster, an advertisement in a vehicle such as a train, ordisplays of various cards such as a credit card. Examples of suchelectronic appliances are illustrated in FIGS. 24A and 24B and FIG. 25.

FIG. 24A illustrates a poster 2631 using electronic paper. In the casewhere an advertising medium is printed paper, the advertisement isreplaced by hands; however, by using the electronic paper, theadvertising display can be changed in a short time. Furthermore, stableimages can be obtained without display defects. Note that the poster mayhave a configuration capable of wirelessly transmitting and receivingdata.

By manufacturing the poster 2631 with the use of the display devicedescribed in any of Embodiments 1 to 5, a gate wiring or a source wiringcan be formed using a conductive material including Cu; accordingly,increase in wiring resistance can be prevented. Consequently, high speedoperation and low power consumption of the above display device can beachieved, and thus the poster 2631 can have a large-sized screen or ahigh definition screen.

FIG. 24B illustrates an advertisement 2632 in a vehicle such as a train.In the case where an advertising medium is printed paper, theadvertisement is replaced by hands; however, by using the electronicpaper, much manpower is not needed and the advertising display can bechanged in a short time. Furthermore, stable images can be obtainedwithout display defects. Note that the advertisement in a vehicle mayhave a configuration capable of wirelessly transmitting and receivingdata.

By manufacturing the advertisement 2632 in a vehicle with the use of thedisplay device described in any of Embodiments 1 to 5, a gate wiring ora source wiring can be formed using a conductive material including Cu;accordingly, increase in wiring resistance can be prevented.Consequently, high speed operation and low power consumption of theabove display device can be achieved, and thus the advertisement 2632 ina vehicle can have a large-sized screen or a high definition screen.

FIG. 25 illustrates an example of an electronic book reader. Forexample, an electronic book reader 2700 includes two housings, a housing2701 and a housing 2703. The housing 2701 and the housing 2703 arecombined with a hinge 2711 so that the electronic book reader 2700 canbe opened and closed with the hinge 2711 as an axis. With such astructure, the electronic book reader 2700 can operate like a paperbook.

A display portion 2705 and a display portion 2707 are incorporated inthe housing 2701 and the housing 2703, respectively. The display portion2705 and the display portion 2707 may display one image or differentimages. In the case where the display portion 2705 and the displayportion 2707 display different images, for example, text can bedisplayed on a display portion on the right side (the display portion2705 in FIG. 25) and graphics can be displayed on a display portion onthe left side (the display portion 2707 in FIG. 25).

FIG. 25 illustrates an example in which the housing 2701 is providedwith an operation portion and the like. For example, the housing 2701 isprovided with a power switch 2721, an operation key 2723, a speaker2725, and the like. With the operation key 2723, pages can be turned.Note that a keyboard, a pointing device, and the like may be provided ona surface of the housing, on which the display portion is provided.Furthermore, an external connection terminal (such as an earphoneterminal, a USB terminal, or a terminal that can be connected to variouscables like an AC adapter and a USB cable), a recording medium insertionportion, and the like may be provided on the back surface or a sidesurface of the housing. Moreover, the electronic book reader 2700 mayhave a function of an electronic dictionary.

The electronic book reader 2700 may have a configuration capable ofwirelessly transmitting and receiving data. Through wirelesscommunication, desired book data or the like can be purchased anddownloaded from an electronic book server.

Embodiment 11

A semiconductor device disclosed in this specification can be applied toa variety of electronic appliances (including amusement machines).Examples of electronic appliances include television sets (also referredto as televisions or television receivers), monitors of computers or thelike, cameras such as digital cameras and digital video cameras, digitalphoto frames, cellular phones (also referred to as mobile phones ormobile phone sets), portable game consoles, portable informationterminals, audio reproducing devices, large-sized game machines such aspachinko machines, and the like.

FIG. 26A illustrates an example of a television set. In a television set9600, a display portion 9603 is incorporated in a housing 9601. Imagescan be displayed on the display portion 9603. Here, the housing 9601 issupported by a stand 9605.

The television set 9600 can be operated with an operation switch of thehousing 9601 or a separate remote controller 9610. Channels and volumecan be controlled with an operation key 9609 of the remote controller9610 so that an image displayed on the display portion 9603 can becontrolled. Furthermore, the remote controller 9610 may be provided witha display portion 9607 for displaying data output from the remotecontroller 9610.

Note that the television set 9600 is provided with a receiver, a modem,and the like. With the receiver, a general television broadcast can bereceived. Furthermore, when the television set 9600 is connected to acommunication network by wired or wireless connection via the modem,one-way (from a transmitter to a receiver) or two-way (between atransmitter and a receiver, between receivers, or the like) datacommunication can be performed.

By manufacturing the television set 9600 with the use of the displaydevice described in any of Embodiments 1 to 5, a gate wiring or a sourcewiring can be formed using a conductive material including Cu;accordingly, increase in wiring resistance can be prevented.Consequently, high speed operation and low power consumption of theabove display device can be achieved, and thus the television set 9600can have a large-sized screen or a high definition screen.

FIG. 26B illustrates an example of a digital photo frame. For example,in a digital photo frame 9700, a display portion 9703 is incorporated ina housing 9701. Various images can be displayed on the display portion9703. For example, data of an image taken by a digital camera or thelike can be displayed, and the digital photo frame can function as anormal photo frame.

Note that the digital photo frame 9700 is provided with an operationportion, an external connection portion (such as a USB terminal or aterminal that can be connected to various cables like a USB cable), arecording medium insertion portion, and the like. Although thesecomponents may be provided on a surface where the display portion isprovided, it is preferable to provide them on a side surface or the backsurface for the design of the digital photo frame 9700. For example, amemory storing data of an image taken by a digital camera is inserted inthe recording medium insertion portion of the digital photo frame,whereby the image data can be downloaded and displayed on the displayportion 9703.

The digital photo frame 9700 may have a configuration capable ofwirelessly transmitting and receiving data. Through wirelesscommunication, desired image data can be downloaded to be displayed.

FIG. 27A illustrates a portable amusement machine including twohousings, a housing 9881 and a housing 9891. The housings 9881 and 9891are connected with a connection portion 9893 so as to be opened andclosed. A display portion 9882 and a display portion 9883 areincorporated in the housing 9881 and the housing 9891, respectively. Inaddition, the portable amusement machine illustrated in FIG. 27Aincludes a speaker portion 9884, a recording medium insertion portion9886, an LED lamp 9890, input means (an operation key 9885, a connectionterminal 9887, a sensor 9888 (having a function of measuring force,displacement, position, speed, acceleration, angular velocity,rotational frequency, distance, light, liquid, magnetism, temperature,chemical substance, sound, time, hardness, electric field, current,voltage, electric power, radiation, flow rate, humidity, gradient,oscillation, odor, or infrared rays), and a microphone 9889), and thelike. Needless to say, the structure of the portable amusement machineis not limited to the above and other structures provided with at leasta semiconductor device disclosed in this specification can be employed.The portable amusement machine may include other accessory equipment, asappropriate. The portable amusement machine illustrated in FIG. 27A hasa function of reading a program or data stored in a recording medium todisplay it on the display portion, and a function of sharing informationwith another portable amusement machine by wireless communication. Theportable amusement machine illustrated in FIG. 27A can have variousfunctions without limitation to the above.

FIG. 27B illustrates an example of a slot machine which is a large-sizedamusement machine. In a slot machine 9900, a display portion 9903 isincorporated in a housing 9901. In addition, the slot machine 9900includes an operation means such as a start lever or a stop switch, acoin slot, a speaker, and the like. Needless to say, the structure ofthe slot machine 9900 is not limited to the above and other structuresprovided with at least a semiconductor device disclosed in thisspecification may be employed. The slot machine 9900 may include otheraccessory equipment, as appropriate.

FIG. 28A is a perspective view illustrating an example of a portablecomputer.

In the portable computer of FIG. 28A, a top housing 9301 having adisplay portion 9303 and a bottom housing 9302 having a keyboard 9304can overlap with each other by closing a hinge unit which connects thetop housing 9301 and the bottom housing 9302. The portable computer ofFIG. 28A can be convenient for carrying, and in the case of using thekeyboard for input, the hinge unit is opened and the user can inputlooking at the display portion 9303.

The bottom housing 9302 includes a pointing device 9306 with which inputcan be performed, in addition to the keyboard 9304. Further, when thedisplay portion 9303 is a touch input panel, input can be performed bytouching part of the display portion. The bottom housing 9302 includesan arithmetic function portion such as a CPU or hard disk. In addition,the bottom housing 9302 includes an external connection port 9305 intowhich another device such as a communication cable conformable tocommunication standards of a USB is inserted.

The top housing 9301 further includes a display portion 9307 which canbe stored in the top housing 9301 by being slid therein. Thus, a largedisplay screen can be realized. In addition, the user can adjust theorientation of a screen of the storable display portion 9307. When thestorable display portion 9307 is a touch input panel, input can beperformed by touching part of the storable display portion.

The display portion 9303 or the storable display portion 9307 is formedusing an image display device of a liquid crystal display panel, alight-emitting display panel such as an organic light-emitting elementor an inorganic light-emitting element, or the like.

In addition, the portable computer of FIG. 28A, which can be providedwith a receiver or the like, can receive a television broadcast todisplay an image on the display portion. While the hinge unit whichconnects the top housing 9301 and the bottom housing 9302 is keptclosed, the whole screen of the display portion 9307 is exposed bysliding the display portion 9307 out and the angle of the screen isadjusted; thus, the user can watch a television broadcast. In this case,the hinge unit is not opened and display is not performed on the displayportion 9303. In addition, start up of only a circuit which displays thetelevision broadcast is performed. Therefore, power consumption can beminimized, which is advantageous for the portable computer whose batterycapacity is limited.

FIG. 28B is a perspective view illustrating an example of a cellularphone that the user can wear on the wrist like a wristwatch.

This cellular phone is formed with a main body which includes acommunication device including at least a telephone function, and abattery; a band portion 9204 which enables the main body to be worn onthe wrist; an adjusting portion 9205 for adjusting the fixation of theband portion 9204 fixed for the wrist; a display portion 9201; a speaker9207; and a microphone 9208.

In addition, the main body includes operation switches 9203. Theoperation switches 9203 serve, for example, as a switch for starting aprogram for the Internet when the switch is pressed, in addition toserving as a switch for turning on a power source, a switch for shiftinga display, a switch for instructing to start taking images, or the like,and can be used so as to correspond to each function.

Input to this cellular phone is performed by touching the displayportion 9201 with a finger or an input pen, operating the operationswitches 9203, or inputting voice into the microphone 9208. Note thatdisplayed buttons 9202 which are displayed on the display portion 9201are illustrated in FIG. 28B. Input can be performed by touching thedisplayed buttons 9202 with a finger or the like.

Further, the main body includes a camera portion 9206 including an imagepick-up means having a function of converting an image of an object,which is formed through a camera lens, to an electronic image signal.Note that the camera portion is not necessarily provided.

The cellular phone illustrated in FIG. 28B is provided with a receiverof a television broadcast or the like, and can display an image on thedisplay portion 9201 by receiving a television broadcast. In addition,the cellular phone illustrated in FIG. 28B is provided with a memorydevice and the like such as a memory, and can record a televisionbroadcast in the memory. The cellular phone illustrated in FIG. 28B mayhave a function of collecting location information such as GPS.

An image display device of a liquid crystal display panel, alight-emitting display panel such as an organic light-emitting elementor an inorganic light-emitting element, or the like is used as thedisplay portion 9201. The cellular phone illustrated in FIG. 28B iscompact and lightweight, and the battery capacity thereof is limited.Therefore, a panel which can be driven with low power consumption ispreferably used as a display device for the display portion 9201.

Note that FIG. 28B illustrates the electronic appliance which is worn onthe wrist; however, this embodiment is not limited thereto as long as aportable shape is employed.

Embodiment 12

In this embodiment, examples of display devices including the thin filmtransistor described in Embodiment 1 will be described as one embodimentof a semiconductor device with reference to FIG. 29, FIG. 30, FIG. 31,and FIG. 32. In this embodiment, an example of a liquid crystal displaydevice using a liquid crystal element as a display element will bedescribed with reference to FIG. 29, FIG. 30, FIG. 31, and FIG. 32. Anyof the thin film transistors described in Embodiments 1 and 2 can beapplied to a TFT 628 and a TFT 629 used for liquid crystal displaydevices illustrated in FIG. 29, FIG. 30, FIG. 31, and FIG. 32, and theTFT 628 and the TFT 629 can be manufactured through a process similar tothat described in Embodiment 2 and have high electric characteristicsand high reliability. The TFT 628 and the TFT 629 are each a thin filmtransistor including an oxide semiconductor layer as a channel formationregion. The case where the thin film transistor illustrated in FIGS. 1Aand 1B is used as an example of a thin film transistor will describedwith reference to FIG. 29, FIG. 30, FIG. 31, and FIG. 32, but anembodiment of the present invention is not limited thereto.

A vertical alignment (VA) liquid crystal display device is described.The VA liquid crystal display device has a kind of form in whichalignment of liquid crystal molecules of a liquid crystal display panelis controlled. The VA liquid crystal display device has a form in whichliquid crystal molecules are vertical to a panel surface when voltage isnot applied. In this embodiment, in particular, a pixel is divided intosome regions (subpixels), and molecules are aligned in differentdirections in their respective regions. This is referred to as domainmultiplication or multi-domain design. In the following description, aliquid crystal display device with multi-domain design is described.

FIG. 30 and FIG. 31 illustrate a pixel electrode and a counterelectrode, respectively. FIG. 30 is a plan view of a substrate side,which is provided with the pixel electrode. FIG. 29 illustrates across-sectional structure taken along line E-F of FIG. 30. FIG. 31 is aplan view of a substrate side, which is provided with the counterelectrode. Hereinafter, description is made with reference to thesedrawings.

FIG. 29 illustrates a state in which a substrate 600 provided with theTFT 628, a pixel electrode layer 624 electrically connected thereto, anda storage capacitor portion 630 overlaps with a counter substrate 601provided with a counter electrode layer 640 and the like, and liquidcrystal is injected therebetween.

The counter substrate 601 is provided with a coloring film 636 and thecounter electrode layer 640, and the counter electrode layer 640 isprovided with a projection 644 for controlling alignment of liquidcrystal. Here, the height of the projection 644 on the counter electrodelayer 640 is different from the height of a spacer (not illustrated). Analignment film 648 is formed over the pixel electrode layer 624. In asimilar manner, the counter electrode layer 640 is provided with analignment film 646. A liquid crystal layer 650 is formed between theelectrode layers.

As the spacer, columnar spacer may be used or bead spacers may bedispersed. Further, the spacer may also be formed over the pixelelectrode layer 624 provided over the substrate 600.

The TFT 628, the pixel electrode layer 624 electrically connectedthereto, and the storage capacitor portion 630 are formed over thesubstrate 600 provided with an insulating layer 661. The pixel electrodelayer 624 is connected to a wiring 618 through a contact hole 623 whichpenetrates an insulating layer 664 that covers the TFT 628, a sourcewiring 616, and the storage capacitor portion 630, an insulating layer665 over the insulating layer 664, an insulating layer 666 over theinsulating layer 665, and an insulating layer 622 over the insulatinglayer 666. Further, the source wiring 616 which includes a stack of asource wiring 616 a and a source wiring 616 b is formed over theinsulating layer 665 and connected to a source electrode layer or adrain electrode layer of the TFT 628 through a contact hole formed inthe insulating layer 665 and the insulating layer 664. Here, the thinfilm transistor described in Embodiment 1 can be used as the TFT 628 asappropriate.

The storage capacitor portion 630 includes a first capacitor wiring 604which is formed at the same time as a gate wiring 602 of the TFT 628,insulating layers 662 and 663 over the gate wiring 602, and a secondcapacitor wiring 617 which is formed at the same time as the wiring 618.Here, the gate wiring 602 is a stack of gate wirings 602 a and 602 b,and the gate wiring 602 b functions as a gate electrode layer of the TFT628. The capacitor wiring 604 is also a stack of capacitor wirings 604 aand 604 b.

A liquid crystal element is formed by overlapping of the pixel electrodelayer 624, the liquid crystal layer 650, and the counter electrode layer640.

FIG. 30 illustrates a structure over the substrate 600. The pixelelectrode layer 624 is formed using the material described inEmbodiment 1. The pixel electrode layer 624 is provided with a slit 625.The slit 625 is provided to control alignment of the liquid crystal.

The TFT 629, a pixel electrode layer 626 electrically connected thereto,and a storage capacitor portion 631 illustrated in FIG. 30 can be formedin a similar manner to that of the TFT 628, the pixel electrode layer624, and the storage capacitor portion 630, respectively. Note that acapacitor wiring 605 included in the storage capacitor portion 631 isalso a stack of capacitor wirings 605 a and 605 b, which is similar tothe case of the capacitor wiring 604. Here, the TFT 628 and the TFT 629are both connected to the source wiring 616 and the gate wiring 602. Apixel of this liquid crystal display panel includes the pixel electrodelayers 624 and 626. Each of the pixel electrode layers 624 and 626 is ina sub-pixel.

FIG. 31 illustrates a structure on the counter substrate side. Thecounter electrode layer 640 is preferably formed using a materialsimilar to that of the pixel electrode layer 624. The counter electrodelayer 640 is provided with the projection 644 for controlling alignmentof the liquid crystal.

FIG. 32 illustrates an equivalent circuit of this pixel structure. Boththe TFT 628 and the TFT 629 are connected to the gate wiring 602 and thesource wiring 616. In this case, when potentials of the capacitor wiring604 and the capacitor wiring 605 are different from each other,operations of a liquid crystal element 651 and a liquid crystal element652 can be different from each other. That is, alignment of the liquidcrystal is precisely controlled and the viewing angle is increased byindividual control of potentials of the capacitor wirings 604 and 605.

When voltage is applied to the pixel electrode layer 624 provided withthe slit 625, electric field distortion (an oblique electric field) isgenerated in the vicinity of the slit 625. The slit 625 and theprojection 644 on the counter substrate 601 side are alternatelyarranged in an engaging manner, and thus an oblique electric field iseffectively generated to control alignment of the liquid crystal, sothat a direction of alignment of the liquid crystal varies depending onlocation. That is, the viewing angle of the liquid crystal display panelis increased by domain multiplication.

Next, another VA liquid crystal display device, which is different fromthe above, is described with reference to FIG. 33, FIG. 34, FIG. 35, andFIG. 36. In the structures of the invention to be given below, portionswhich are the same as or have functions similar to those of the above VAliquid crystal display device are denoted by the same reference numeralsin different drawings, and repetitive description thereof is omitted.

FIG. 33 and FIG. 34 each illustrate a pixel structure of a VA liquidcrystal display panel. FIG. 34 is a plan view of the substrate 600. FIG.33 illustrates a cross-sectional structure taken along line Y-Z of FIG.34. Hereinafter, description is made with reference to these drawings.

In this pixel structure, a plurality of pixel electrodes is included inone pixel, and each of the pixel electrodes is connected to a respectiveTFT. Each TFT is driven by a different gate signal. That is, this is astructure in which a signal supplied to each pixel electrode isindividually controlled in a multi-domain pixel.

Through the contact hole 623, the pixel electrode layer 624 is connectedto the TFT 628 through the wiring 618. Through a contact hole 627, thepixel electrode layer 626 is connected to the TFT 629 through a wiring619. The gate wiring 602 of the TFT 628 and a gate wiring 603 of the TFT629 are separated so that different gate signals can be suppliedthereto. Meanwhile, the source wiring 616 which functions as a data lineis connected to the source electrode layers of the TFT 628 and the TFT629 through contact holes formed in the insulating layer 664 and theinsulating layer 665, and commonly used between the TFT 628 and the TFT629. As each of the TFTs 628 and 629, the thin film transistor describedin Embodiment I can be used as appropriate. A capacitor wiring 690 isalso provided. Note that similarly to the pixel structure of the aboveVA liquid crystal display panel, the gate wiring 602 is a stack of thegate wirings 602 a and 602 b, the gate wiring 603 is a stack of gatewirings 603 a and 603 b, the source wiring 616 is a stack of the sourcewirings 616 a and 616 b, and the capacitor wiring 690 is a stack ofcapacitor wirings 690 a and 690 b. In addition, the insulating layers661 to 666 are formed as those in the pixel structure of the above VAliquid crystal display panel.

The pixel electrode layers 624 and 626 have different shapes and areseparated by the slit 625. The pixel electrode layer 626 is formed so asto surround the pixel electrode layer 624 which has a V shape. Thetiming of voltage applied between the pixel electrode layers 624 and 626is made to vary by the TFTs 628 and 629 in order to control alignment ofthe liquid crystal. FIG. 36 illustrates an equivalent circuit of thispixel structure. The TFT 628 is connected to the gate wiring 602. TheTFT 629 is connected to the gate wiring 603. When different gate signalsare supplied to the gate wirings 602 and 603, operation timings of theTFTs 628 and 629 can vary.

The counter substrate 601 is provided with the coloring film 636 and thecounter electrode layer 640. Moreover, a planarization film 637 isformed between the coloring film 636 and the counter electrode layer 640to prevent alignment disorder of the liquid crystal. FIG. 35 illustratesa structure on the counter substrate side. A slit 641 is formed in thecounter electrode layer 640, which is used in common between differentpixels. The slits 641 and 625 on the pixel electrode layers 624 and 626side are alternately arranged in an engaging manner; thus, an obliqueelectric field is effectively generated, and alignment of the liquidcrystal can be controlled. Accordingly, the direction in which theliquid crystal is aligned can vary depending on location, and theviewing angle is increased.

The liquid crystal element 651 illustrated in FIG. 36 is formed byoverlapping of the pixel electrode layer 624, the liquid crystal layer650, and the counter electrode layer 640 which are illustrated in FIG.33. The liquid crystal element 652 illustrated in FIG. 36 is formed byoverlapping of the pixel electrode layer 626, the liquid crystal layer650, and the counter electrode layer 640 which are illustrated in FIG.33. A multi-domain structure in which the liquid crystal element 651 andthe liquid crystal element 652 are included in one pixel is illustrated.

With the use of the display device described in any of Embodiments 1 to5, a liquid crystal display device like the above can be manufactured.Although the vertical alignment (VA) liquid crystal display device isdescribed, this embodiment is not limited thereto. For example, a liquidcrystal display device in a horizontal electric field mode (e.g., an IPSliquid crystal display device) in which a horizontal electric field isapplied to liquid crystal molecules in a cell, whereby liquid crystal isdriven to express gray scales or a TN liquid crystal display device maybe employed.

By manufacturing the above liquid crystal display device with the use ofthe display device described in any of Embodiments 1 to 5, a gate wiringor a source wiring can be formed using a conductive material includingCu; accordingly, increase in wiring resistance can be prevented.Consequently, high speed operation and low power consumption of thedisplay device can be achieved, and thus the liquid crystal displaydevice can have a large-sized screen or a high definition screen.

Embodiment 13

In this embodiment, an example of manufacturing a display panel in whicha first substrate provided with a thin film transistor and a secondsubstrate serving as a counter substrate are bonded to each other willbe described below.

In a production process of liquid crystal display panels or EL displaypanels, static electricity might affect an electronic circuit adversely,which results in variation in electric characteristics or breakdown ofthe circuit. In addition, there is a problem in that static electricityeasily causes attachment of dust to a product.

In particular, an insulating substrate is easily electrostaticallycharged. An insulating substrate is formed using a material that iseasily electrostatically charged, such as glass or a resin.

Note that static electricity refers to charges in a state where, whentwo objects are rubbed together, in contact with each other, orseparated from each other, one is positively charged and the other isnegatively charged. Charges are generated by movement of electronsbetween two objects owing to friction or the like; such a phenomenon iscalled electrification. When electrification is caused, generatedcharges do not flow and are stored as static electricity in the casewhere a material of an object is an insulator.

Moreover, a thin film transistor including an oxide semiconductor layerhas a possibility that electric characteristics of the thin filmtransistor may fluctuate by the influence of static electricity anddeviate from the designed range.

Thus, after the first substrate provided with the thin film transistorand the second substrate serving as the counter substrate are bonded toeach other, heat treatment is performed in a state where staticelectricity stored in the thin film transistor is released to a groundside and the charging amount of static electricity is graduallydecreased so that the static electricity is eliminated more easily. Whenthis heat treatment also serves as at least one of heat treatmentsperformed in manufacturing the display panel, the charging amount ofstatic electricity can be reduced without increase in the number ofsteps.

The case of manufacturing a liquid crystal display panel is describedbelow with reference to FIGS. 39A to 39C.

First, a first substrate 701 over which a thin film transistor 710including an oxide semiconductor layer and a pixel electrode 730 areformed in accordance with Embodiment 2 is prepared. Further, a drivercircuit is provided over the first substrate 701, and a TFT 711 in thedriver circuit is manufactured through the same process as the thin filmtransistor 710. A conductive layer 740 is formed above the TFT 711 inthe driver circuit to block static electricity. Note that the conductivelayer 740 is formed using the same material as the pixel electrode 730.

After the pixel electrode is formed, cleaning is performed and thendrying is performed at 150° C. for 2 minutes. Next, an alignment film isformed. The alignment film is formed in such a manner that a liquidmaterial for forming a horizontal alignment film (or a liquid materialfor forming a vertical alignment film), such as polyimide, isselectively applied by an offset printing method, a screen printingmethod, or the like, and baked. Prebaking is performed with a hot plateat 80° C. for 2 minutes and then baking is performed with a clean ovenat 230° C. for 40 minutes. After the baking, rubbing treatment isperformed. Then, cleaning is performed, and drying is performed at 150°C. for 2 minutes.

A process of forming a color filter, an alignment film, a sealant, andthe like on a second substrate 706 serving as a counter substrate isdescribed below.

First, a black resin layer pattern serving as a black matrix is formedon the second substrate 706. Next, a green resin layer pattern, a blueresin layer pattern, and a red resin layer pattern are formed. The greenresin layer pattern, the blue resin layer pattern, and the red resinlayer pattern form the color filter. Then, an overcoat layer is formedto cover these resin layer patterns.

Next, a counter electrode 731 including indium tin oxide to whichsilicon oxide is added is formed on the overcoat layer by a sputteringmethod. In order to reduce resistance of the counter electrode 731,heating is performed at 250° C. for 1 hour.

Next, a columnar spacer 735 is formed on the counter electrode 731. Thecolumnar spacer 735 is obtained by selectively etching an organic resinfilm such as an acrylic resin film.

Next, cleaning is performed, and drying is performed at 150° C. for 2minutes. Then, an alignment film is formed on the spacer 735. Thealignment film is formed in such a manner that a liquid material forforming a horizontal alignment film (or a liquid material for forming avertical alignment film), such as polyimide, is selectively applied byan offset printing method, a screen printing method, or the like, andbaked. Prebaking is performed with a hot plate at 80° C. for 2 minutesand then baking is performed with a clean oven at 230° C. for 40minutes. After the baking, rubbing treatment is performed. Then,cleaning is performed, and drying is performed at 150° C. for 2 minutes.

Next, a sealant is formed by a screen printing method, or using aninkjet apparatus or a dispensing apparatus. For the sealant, anacrylic-based photocurable resin or the like may be used. As thesealant, a sealant which includes a filler (with a diameter of 6 μm to24 μm) and has a viscosity of 40 Pa·s to 400 Pa·s is used. Note that itis preferable to select a sealant which is not dissolved in liquidcrystal with which the sealant is in contact later. This sealant isformed into a closed loop and surrounds a display region.

In order to electrically connect the counter electrode 731 to a commonconnection portion 702 provided over the first substrate, a sealant 704including conductive particles is also formed using an inkjet apparatusor a dispensing apparatus. The common connection portion 702 is providedin a position overlapping with the sealant for bonding the firstsubstrate and the second substrate and is electrically connected to thecounter electrode through the conductive particles in the sealant.Alternatively, the common connection portion is provided in a positionthat does not overlap with the sealant (except for the pixel portion)and a paste including conductive particles is provided so as to overlapwith the common connection portion, whereby the common connectionportion is electrically connected to the counter electrode. The commonconnection portion 702 is formed using the same material and through thesame process as the pixel electrode 730 and the conductive layer 740.

It does not matter if the second substrate 706 is electrostaticallycharged until the formation of the sealant because an element such as athin film transistor is not formed yet; however, since the secondsubstrate 706 is bonded to the first substrate in a later step, it ispreferable that the charging amount of the second substrate 706 bereduced before the bonding. In this case, the charging amount of thesecond substrate 706 may be reduced with an ionizer or the like, or heattreatment such as the above baking may be performed in a state where thecounter electrode 731 is electrically connected to a fixed potential,for example, a ground potential.

Next, liquid crystal is dripped on the alignment film of the secondsubstrate 706. The dripping of a liquid crystal material is performedusing an inkjet apparatus or a dispensing apparatus under atmosphericpressure. There is no particular limitation on the liquid crystalmaterial, and TN liquid crystal, OCB liquid crystal, STN liquid crystal,VA liquid crystal, ECB liquid crystal, GH liquid crystal, polymerdispersed liquid crystal, discotic liquid crystal, or the like can beused.

Next, the pair of substrates is bonded to each other under reducedpressure. The second substrate 706 where the liquid crystal is drippedis bonded to the first substrate 701 provided with the thin filmtransistor 710. Immediately after bonding of 20 the substrates, asealant 705 is irradiated with ultraviolet.

Next, in order to cure the sealant 705 further, heat treatment isperformed at higher than or equal to 80° C. and lower than or equal to200° C. for longer than or equal to 0.5 hour and shorter than or equalto 10 hours. Note that in this heat treatment, the pair of substratesbonded to each other is put in a furnace 780 of a heating apparatus asillustrated in FIG. 39A. The furnace 780 is set over and in contact witha stainless-steel floor which is electrically connected to a groundpotential so that the furnace 780 is electrically connected to theground potential. Then, heating is performed while an external terminal716 which is connected to the ground potential is connected to a commonconnection terminal 715 which is electrically connected to the commonconnection portion 702. Alternatively, the furnace 780 and the commonconnection portion 702 may be electrically connected to a fixedpotential without limitation to the ground potential (also referred toas GND). Cure of the sealant 705 and appropriate removal of storedstatic electricity can be performed at the same time by this heattreatment.

In this embodiment, heating is performed at 120° C. for 1 hour.

Note that FIG. 39B is an enlarged cross-sectional view of a displayregion which is subjected to the heat treatment in a state of beingconnected to the ground potential. As illustrated in FIG. 39B, a liquidcrystal layer 708 is provided between the counter electrode 731 which iselectrically connected to the ground potential and the pixel electrode730 which is electrically connected to the thin film transistor 710. Byheating the liquid crystal layer 708, static electricity 790 stored inthe thin film transistor 710 is released to the ground side through theliquid crystal layer 708. FIG. 39C is a schematic view illustrating theabove state simply. FIG. 39C, which is the schematic view using anequivalent circuit, illustrates a path 791 through which the staticelectricity 790 stored in the thin film transistor 710 is released tothe ground side through the liquid crystal layer. By the heat treatment,stored static electricity is released to the ground side through thepath 791 and gradually decreased to be eliminated easily.

By performing heat treatment with the counter electrode set at theground potential, a normally-off thin film transistor can bemanufactured stably; accordingly, yield of the liquid crystal displaypanel can be improved.

In the case of manufacturing a plurality of panels from one substrate,after bonding of the pair of substrates, the first substrate or bothsubstrates is/are cut using a cutting apparatus such as a scriberapparatus, a breaker apparatus, or a roll cutter. Thus, a plurality ofpanels can be manufactured from one substrate.

Next, heat treatment for aligning liquid crystal, that is, realignmenttreatment is performed (e.g., at 80° C. to 200° C. for 10 minutes to 1hour, preferably at 100° C. to 170° C. for 10 minutes to 1 hour).

In this embodiment, heating at 120° C. for 1 hour is performed as therealignment treatment. This heat treatment may be performed with thecounter electrode set at the ground potential as illustrated in FIG.39A. Further, cure of the sealant and alignment of the liquid crystalare performed by separate heat treatments as an example in thisembodiment, but may be performed by one heat treatment.

Through the above process, the liquid crystal display panel can beformed.

In addition, without limitation to the liquid crystal display device,the heat treatment for reducing stored static electricity can beperformed on a display panel such as electronic paper where electronicink is driven, which is described in Embodiment 8. For example, heattreatment for curing a sealant with which a second substrate that isused for sealing of the electronic ink is fixed to a first substrateprovided with a thin film transistor may be performed while an electrodeprovided on the second substrate is electrically connected to a groundpotential. When heat treatment is performed with the electrode providedon the second substrate set at the ground potential, a normally-off thinfilm transistor can be manufactured stably; accordingly, yield of theactive matrix electronic paper can be improved.

Furthermore, without limitation to the liquid crystal display device,the heat treatment for reducing stored static electricity can beperformed on the EL display panel described in Embodiment 9.

In the case of manufacturing an EL display panel, a first electrodewhich is electrically connected to a thin film transistor including anoxide semiconductor layer and a partition wall which covers a peripheryof the first electrode are formed over a first substrate in accordancewith Embodiment 2, and then heating is performed. This heating isconducted in the following manner: heat treatment is performed at 200°C. for 1 hour in a nitrogen atmosphere and further at 150° C. for 1 hourin vacuum, and then a layer including an organic compound is evaporatedover the first electrode of the first substrate.

Next, a second electrode is formed over the layer including an organiccompound by an evaporation method or a sputtering method. The secondelectrode is provided above and to overlap with the thin film transistorin a display region. Further, the second electrode can also be providedabove and to overlap with a thin film transistor in a driver circuit.When the second electrode is at a common potential, it is preferablethat the second electrode be electrically connected to a groundpotential during heat treatment performed later.

Next, a second substrate having a depression where a drying agent is setis fixed to the first substrate with a sealant, and heat treatment forcuring the sealant is performed. In the case of an EL display panel, alight-emitting element might deteriorate at a heating temperature higherthan 80° C.; therefore, the heat treatment is performed at 80° C. forlonger than or equal to 0.5 hour and shorter than or equal to 10 hours.

By performing heat treatment with the second electrode set at the groundpotential, a normally-off thin film transistor can be manufacturedstably; accordingly, yield of the EL display panel can be improved.

In the case where sealing of the light-emitting element is performedusing a stainless-steel substrate with a small thickness as the secondsubstrate, heat treatment is performed at the time of curing an adhesive(such as an epoxy resin) for fixing the stainless-steel substrate whilethe stainless-steel substrate is electrically connected to the groundpotential. In the case of using the stainless-steel substrate, thestainless-steel substrate including a conductive material overlaps withall thin film transistors including the thin film transistor in thedisplay region and the thin film transistor in the driver circuit whichare formed over one substrate. By performing heat treatment with thestainless-steel substrate overlapping with the thin film transistors setat a fixed potential such as the ground potential, normally-off thinfilm transistors can be manufactured stably; accordingly, yield of theEL display panel which is flexible can be improved.

By performing heat treatment with an electrode overlapping with a thinfilm transistor set at a fixed potential such as a ground potential,static electricity stored in a substrate in a manufacturing process of asemiconductor device can be favorably removed.

Embodiment 14

In this embodiment, as for the channel-etched thin film transistor inwhich an In—Ga—Zn—O-based oxide semiconductor film is used as an activelayer, which is described in Embodiment 2, the following phenomenon wasexamined by computational science: a layer including indium at a higherconcentration than the other region (In-rich layer) and a titanium oxide(TiO_(x)) film are formed in the vicinity of an interface between theIn—Ga—Zn—O-based oxide semiconductor film and a metal film used for asource electrode and a drain electrode.

First, energy which is necessary for an oxide of each of indium,gallium, and zinc that are included in the In—Ga—Zn—O-based oxidesemiconductor to form an oxygen-deficient state (deficiency formationenergy E_(def)) was calculated, and which metal oxide was likely to forman oxygen-deficient state was studied.

Note that the deficiency formation energy E_(def) is expressed byFormula 1 below. A represents any of indium; gallium; zinc; and acombination of indium, gallium, and zinc. Note that E(O) represents halfenergy of an oxygen atom, and E(A_(m)O_(n-1)) represents energy of anoxide A_(m)O_(m-1) with oxygen deficiency.

E _(def) ={E(A _(m) O _(n-1))+E(O)}−E(A _(m) O _(n))   (Formula 1)

An approximate relation between a concentration of deficiency n and thedeficiency formation energy E_(def) is expressed by Formula 2 below.Note that N represents the number of oxygen positions in a state wheredeficiency is not formed, k_(B) represents Boltzmann constant, and Trepresents temperature.

n=N×exp(−E _(def) /k _(B) T)   (Formula 2)

The calculation was performed using CASTEP, which is a program using thedensity functional theory. A plane-wave-basis pseudopotential method wasused as the density functional theory, and GGA-PBE was used for afunctional. The cut-off energy was 500 eV. The number of grids atk-point was set as follows: 3×3×1 for IGZO; 2×2×2 for In₂O₃; 2×3×2 forGa₂O₃; and 4×4×1 for ZnO.

As a crystal structure of IGZO crystal, a structure where 84 atoms werearranged in the structure obtained by doubling a symmetry R-3(international number: 148) structure for each of the a-axis and theb-axis so that each energy of Ga and Zn was minimized was employed. Asfor In₂O₃, a bixbyite structure of 80 atoms was employed; as for Ga₂O₃,a β-Gallia structure of 80 atoms was employed; and as for ZnO, awurtzite structure of 80 atoms was employed.

From the Formula 2, it is found that when the deficiency formationenergy E_(def) is increased, the concentration of oxygen deficiency n,that is, the amount of oxygen deficiency is decreased. Table 1 belowshows values of the deficiency formation energy E_(def) in the casewhere A is indium; in the case where A is gallium; in the case where Ais zinc; and in the case where A is a combination of indium, gallium,and zinc.

IGZO (Model 1) shows a value of the deficiency formation energy E_(def)of oxygen that is adjacent to three indium atoms and one zinc atom in acrystal. This structure is illustrated in FIG. 40A.

IGZO (Model 2) shows a value of the deficiency formation energy E_(def)of oxygen that is adjacent to three indium atoms and one gallium atom ina crystal. This structure is illustrated in FIG. 40B.

IGZO (Model 3) shows a value of the deficiency formation energy E_(def)of oxygen that is adjacent to two zinc atoms and two gallium atoms in acrystal. This structure is illustrated in FIG. 40C.

TABLE 1 Compound E_(def) (eV) In₂O₃ 3.06 ZnO 3.75 IGZO (Model 1) 3.73IGZO (Model 2) 3.98 IGZO (Model 3) 4.08 Ga₂O₃ 4.18

The larger the value of the deficiency formation energy E_(def) is, themore energy is needed to form an oxygen-deficient state; that is,stronger bonding with oxygen is formed. Accordingly, the values of thedeficiency formation energy E_(def) shown in Table 1 indicate thatindium has the weakest bonding with oxygen and oxygen is easily releasedin the vicinity of indium.

It is considered that an oxygen-deficient state in an In—Ga—Zn—O-basedoxide semiconductor is formed by extraction of oxygen from the oxidesemiconductor by metal used for a source electrode and a drainelectrode. Since the electric conductivity of an oxide semiconductor isincreased by formation of an oxygen-deficient state, the electricconductivity of the oxide semiconductor film in the vicinity of aninterface with the metal film is expected to be increased by theextraction of oxygen.

Next, in order to confirm whether oxygen is extracted from the oxidesemiconductor by metal, quantum molecular dynamic (QMD) simulation wasperformed on a stacked-layer structure of the In—Ga—Zn—O-based oxidesemiconductor film and the metal film.

The structure used for the simulation was formed in the followingmanner. First, a unit lattice including 84 atoms (In₁₂Ga₁₂Zn₁₂O₄₈) wasextracted from an amorphous In—Ga—Zn—O-based oxide semiconductor(a-IGZO) formed by a classical molecular dynamic (CMD) method, and wassubjected to quantum molecular dynamic (QMD) simulation andfirst-principle structural optimization. Over an a-IGZO layer obtainedby cutting the unit lattice subjected to the structural optimization, ametal layer including crystal of metal atoms (W, Mo, and Ti) wasstacked. After that, the formed structure was optimized. Simulation wasperformed using this structure as an initial structure at 623.0 K by thequantum molecular dynamic (QMD) method. Note that a lower end of thea-IGZO layer and an upper end of the metal layer were fixed so that onlyinteraction in the interface could be estimated.

The conditions of the classical molecular dynamic simulation are shownbelow. Materials Explorer was used as a calculation program. The a-IGZOwas formed under the following conditions. The all 84 atoms werearranged at random in a simulation cell with a side of 1 nm at a ratioof In:Ga:Zn:O=1:1:1:4, and the density was set to 5.9 g/cm³. Thetemperature was gradually lowered from 5500 K to 1 K with an NVTensemble, and then structural relaxation was performed at 1 K and with atime interval of 0.1 fs for 10 ns. The total simulation time was 10 ns.As for potentials, a Born-Mayer-Huggins potential was applied tometal-oxygen bonding and oxygen-oxygen bonding, and a Lennard-Jonespotential was applied to metal-metal bonding. Charges were set asfollows: +3 for In, +3 for Ga, +2 for Zn, and −2 for O.

The conditions of the QMD simulation are shown below. A first-principlecalculation software CASTEP was used as a calculation program. GGA-PBEwas used for a functional, and Ultrasoft was used for pseudopotential.The cut-off energy was 260 eV, and the k-point set was 1×1×1. The MDsimulation was performed using an NVT ensemble at a temperature of 623K. The total simulation time was 2.0 ps and the time interval was 1.0fs.

FIGS. 41A and 4IB, FIGS. 42A and 42B, and FIGS. 43A and 43B show resultsof the above simulation. In FIGS. 41A and 41B, FIGS. 42A and 42B, andFIGS. 43A and 43B, a white sphere represents a metal atom of W, Mo, orTi, and a black sphere represents an oxygen atom. FIGS. 41A and 41B showstructures in the case of using a metal layer including W. FIG. 41Ashows a structure before the QMD simulation, and FIG. 41B showsstructure after the QMD simulation. FIGS. 42A and 42B show structures inthe case of using a metal layer including Mo. FIG. 42A shows a structurebefore the QMD simulation, and FIG. 42B shows structure after the QMDsimulation. FIGS. 43A and 43B show structures in the case of using ametal layer including Ti. FIG. 43A shows a structure before the QMDsimulation, and FIG. 43B shows structure after the QMD simulation.

From FIG. 42A and FIG. 43A, in the cases of Mo and Ti, oxygen moved intothe metal layers is already observed at the time of structuraloptimization. By comparing FIG. 41B, FIG. 42B, and FIG. 43B, it is foundthat oxygen moves most frequently in the case of Ti. Accordingly, Ti isconsidered to be suitable for an electrode that causes oxygen deficiencyin a-IGZO.

It is assumed that oxygen extracted by titanium reacts with titanium andthus titanium oxide is formed. Therefore, whether a titanium oxide filmformed between an oxide semiconductor film and a titanium film hasconductivity was examined.

Titanium dioxide has several crystal structures such as a rutilestructure (high temperature tetragonal crystal), an anatase structure(low temperature tetragonal crystal), and a brookite structure(orthorhombic crystal). Since both the anatase structure and thebrookite structure are changed into the rutile structure by heating,which is the most stable structure, the above titanium dioxide wasassumed to have a rutile structure. FIG. 44 shows a crystal structure oftitanium dioxide having a rutile structure. The rutile structure istetragonal crystal and the space group that represents symmetry ofcrystal is P4₂/mnm.

Simulation for obtaining density of states was performed on the abovestructure of titanium dioxide by a density functional theory using aGGA-PBE functional. The structure of titanium dioxide including a cellstructure was optimized with symmetry maintained, and the density ofstates was calculated. A plane-wave pseudopotential method introducedinto a CASTEP code was employed for the density functional simulation.The cut-off energy was 380 eV.

FIG. 45 shows the density of states of titanium dioxide having a rutilestructure. As shown in FIG. 45, titanium dioxide having a rutilestructure has a band gap and a density of states like that of aninsulator or a semiconductor. Note that a narrower band gap tends to beestimated by the density functional theory; therefore, the actual bandgap of titanium dioxide is approximately 3.0 eV, which is wider than theband gap in FIG. 45 showing the density of states.

FIG. 46 shows the density of states of titanium dioxide having a rutilestructure in the case of including oxygen deficiency. Specifically,titanium oxide including 24 Ti atoms and 47 O atoms, which was obtainedby removing one O atom from titanium oxide including 24 Ti atoms and 48O atoms, was used for the simulation as a model. The density of statesshown in FIG. 46 indicates that the Fermi level is moved inside theconduction band, which is like that of metal, and that titanium dioxidehas n-type conductivity in the case of including oxygen deficiency.

FIG. 47 shows the density of states of titanium monoxide (TiO). FromFIG. 47, it is found that titanium monoxide has a density of states likethat of metal.

Therefore, from the density of states of titanium dioxide shown in FIG.45, the density of states of titanium dioxide including oxygendeficiency shown in FIG. 46, and the density of states of titaniummonoxide shown in FIG. 47, the following assumption can be made:titanium dioxide including oxygen deficiency (TiO₂₋₈) has n-typeconductivity in the range of 0<δ<1. Accordingly, it is considered that,when titanium monoxide or titanium dioxide including oxygen deficiencyis included in the composition of a titanium oxide film, the titaniumoxide film is less likely to inhibit current flow between anIn—Ga—Zn—O-based oxide semiconductor film and a titanium film.

FIG. 48 is a diagram showing an energy band between a source electrodeand a drain electrode of a thin film transistor. Note that FIG. 48 is adiagram in the case of a thin film transistor where an In—Ga—Zn—O-based(IGZO) film is used as an oxide semiconductor film and TiO_(x) films areprovided between the oxide semiconductor film and the source electrodeand between the oxide semiconductor film and the drain electrode. Notethat the thickness of each of the TiO_(x) films is greater than or equalto 0.1 nm and less than or equal to 10 nm. In addition, the above oxidesemiconductor film includes much metal (such as In, Ga, and Zn) and isprovided with a pair of composite layers which is in contact with thepair of TiO_(x) films. The electron affinity of the In—Ga—Zn—O-based(IGZO) film in a region other than the composite layers is 4.3 eV, thatof the TiO_(x) film is 4.3 eV, that of Ti as the source electrode or thedrain electrode is 4.1 eV, and that of the composite layer is 4.5 eV.Note that in FIG. 48, the position of the band of each substance ischanged so that the positions of the Fermi levels are common among thesubstances. When gate voltage is not applied, the Fermi level in IGZO isin the vicinity of the center of the band gap because IGZO has a smallnumber of carriers, whereas the Fermi levels in the TiO_(x) film and thecomposite layer are positioned in the vicinity of the conduction bandbecause the TiO_(x) film and the composite layer have a large number ofcarriers. Therefore, in FIG. 48, the value at the position of theconduction band of each substance is different from the above relativevalue of the electron affinity. As shown in FIG. 48, the composite layerhas little variation in the electron affinity; therefore, favorableconnection structures can be realized between the oxide semiconductorfilm and the source electrode and between the oxide semiconductor filmand the drain electrode.

This application is based on Japanese Patent Application serial no.2009-235791 filed with Japan Patent Office on Oct. 9, 2009, the entirecontents of which are hereby incorporated by reference.

EXPLANATION OF REFERENCE

7: gate terminal portion, 8: source terminal portion, 10: pulse outputcircuit, 11: wiring, 12: wiring, 13: wiring, 14: wiring, 15: wiring, 16:wiring, 17: wiring, 20: gate wiring, 21: input terminal, 22: inputterminal, 23: input terminal, 24: input terminal, 25: input terminal,26: output terminal, 27: output terminal, 30: display device, 31:transistor, 32: transistor, 33: transistor, 34: transistor, 35:transistor, 36: transistor, 37: transistor, 38: transistor, 39:transistor, 40: transistor, 41: transistor, 44: common wiring, 45:common wiring, 45 a: gate wiring, 45 b: gate wiring, 46: common wiring,51: power supply line, 52: power supply line, 53: power supply line, 60:source wiring, 61: period, 62: period, 65: common wiring, 65 a: sourcewiring, 65 b: source wiring, 66: conductive layer, 70: gate signal lineterminal, 71: terminal, 74: terminal, 75: terminal, 80: source signalline terminal, 81: terminal, 84: terminal, 85: terminal, 91: gate drivercircuit, 92: source driver circuit, 93: pixel, 94: pixel region, 95:connection portion, 96: common connection portion, 97: protectioncircuit, 100: substrate, 101: insulating film, 102: insulating layer,102 a: insulating layer, 102 b: insulating layer, 111 a: gate wiring,111 b: gate wiring, 113: semiconductor layer, 115 a: electrode, 115 b:electrode, 115 c: electrode, 117: insulating layer, 118: insulatinglayer, 119: insulating layer, 125: contact hole, 126: contact hole, 127:contact hole, 128: contact hole, 129: conductive layer, 170 a:non-linear element, 170 b: non-linear element, 200: substrate, 201:insulating layer, 202: gate wiring, 203: gate wiring, 204: insulatinglayer, 204 a: insulating layer, 204 b: insulating layer, 205:semiconductor layer, 207: electrode layer, 207 a: electrode, 207 b:electrode, 208: insulating layer, 208 a: insulating layer, 208 b:insulating layer, 209: source wiring, 210: source wiring, 211:insulating layer, 212: electrode, 213: storage capacitor wiring, 214:storage capacitor wiring, 216: opening, 217: opening, 225: channelprotective layer, 231: resist mask, 231 a: resist mask, 231 b: resistmask, 250: thin film transistor, 251: thin film transistor, 252: thinfilm transistor, 300: substrate, 351: gate wiring, 351 a: gate wiring,351 b: gate wiring, 352: electrode, 354: source wiring, 354 a: sourcewiring, 354 b: source wiring, 355: transparent conductive layer, 360:insulating layer, 361: insulating layer, 362: insulating layer, 363:insulating layer, 364: insulating layer, 365: insulating layer, 400:substrate, 401 a: gate wiring, 401 b: gate wiring, 403 a: semiconductorlayer, 403 b: semiconductor layer, 404: contact hole, 405 a: electrode,405 b: electrode, 405 c: electrode, 410: insulating layer, 411:insulating layer, 412: insulating layer, 413: insulating layer, 414:insulating layer, 415: insulating layer, 430 a: thin film transistor,430 b: thin film transistor, 580: substrate, 581: thin film transistor,582: insulating layer, 583: insulating layer, 585: insulating layer,587: electrode layer, 588: electrode layer, 589: spherical particle, 590a: black region, 590 b: white region, 591: insulating layer, 592:insulating layer, 594: cavity, 595: filler, 596: substrate, 597:insulating layer, 598: insulating layer, 599 a: source wiring, 599 b:source wiring, 600: substrate, 601: counter substrate, 602: gate wiring,602 a: gate wiring, 602 b: gate wiring, 603: gate wiring, 603 a: gatewiring, 603 b: gate wiring, 604: capacitor wiring, 604 a: capacitorwiring, 604 b: capacitor wiring, 605: capacitor wiring, 605 a: capacitorwiring, 605 b: capacitor wiring, 616: source wiring, 616 a: sourcewiring, 616 b: source wiring, 617: capacitor wiring, 618: wiring, 619:wiring, 622: insulating layer, 623: contact hole, 624: pixel electrodelayer, 625: slit, 626: pixel electrode layer, 627: contact hole, 628:TFT, 629: TFT, 630: storage capacitor portion, 631: storage capacitorportion, 636: coloring film, 637: planarization film, 640: counterelectrode layer, 641: slit, 644: projection, 646: alignment film, 648:alignment film, 650: liquid crystal layer, 651: liquid crystal element,652: liquid crystal element, 661: insulating layer, 662: insulatinglayer, 663: insulating layer, 664: insulating layer, 665: insulatinglayer, 666: insulating layer, 690: capacitor wiring, 690 a: capacitorwiring, 690 b: capacitor wiring, 701: substrate, 702: common connectionportion, 704: sealant, 705: sealant, 706: substrate, 708: liquid crystallayer, 710: thin film transistor, 711: thin film transistor, 715: commonconnection terminal, 716: extemal terminal, 730: pixel electrode, 731:counter electrode, 735: spacer, 740: conductive layer, 780: furnace,790: static electricity, 791: path, 801 a: gray-tone mask, 801 b:half-tone mask, 802: light-transmitting substrate, 803: light-blockingportion, 804: diffraction grating, 805: light transmittance, 806:light-blocking portion, 807: semi-light-transmitting portion, 808: lighttransmittance, 2600: TFT substrate, 2601: counter substrate, 2602:sealant, 2603: pixel portion, 2604: display element, 2605: coloringlayer, 2606: polarizing plate, 2607: polarizing plate, 2608: wiringcircuit portion, 2609: flexible wiring board, 2610: cold cathode tube,2611: reflection plate, 2612: circuit board, 2613: diffusion plate,2631: poster, 2632: advertisement, 2700: electronic book reader, 2701:housing, 2703: housing, 2705: display portion, 2707: display portion,2711: hinge, 2721: power switch, 2723: operation key, 2725: speaker,4001: substrate, 4002: pixel portion, 4003: signal line driver circuit,4004: scan line driver circuit, 4005: sealant, 4006: substrate, 4008:liquid crystal layer, 4010: thin film transistor, 4011: thin filmtransistor, 4013: liquid crystal element, 4015: connection terminalelectrode, 4016: terminal electrode, 4018: FPC, 4019: anisotropicconductive film, 4020: insulating layer, 4021: insulating layer, 4030:pixel electrode layer, 4031: counter electrode layer, 4032: insulatinglayer, 4033: insulating layer, 4035: spacer, 4040: conductive layer,4041: insulating layer, 4042: insulating layer, 4043: insulating layer,4044: insulating layer, 4045: insulating layer, 4046: source wiring,4501: substrate, 4502: pixel portion, 4503 a: signal line drivercircuit, 4503 b: signal line driver circuit, 4504 a: scan line drivercircuit, 4504 b: scan line driver circuit, 4505: sealant, 4506:substrate, 4507: filler, 4509: thin film transistor, 4510: thin filmtransistor, 4511: light-emitting element, 4512: electroluminescentlayer, 4513: electrode layer, 4515: connection terminal electrode, 4516:terminal electrode, 4517: electrode layer, 4518 a FPC, 4518 b: FPC,4519: anisotropic conductive film, 4520: partition wall, 4540:conductive layer, 4541: insulating layer, 4542: insulating layer, 4543:insulating layer, 4544: insulating layer, 4545: insulating layer, 4546:insulating layer, 4547: insulating layer, 4548: source wiring, 5300:substrate, 5301: pixel portion, 5302: scan line driver circuit, 5303:scan line driver circuit, 5304: signal line driver circuit, 5305: timingcontrol circuit, 5601: shift register, 5602: switching circuit, 5603:thin film transistor, 5604: wiring, 5605: wiring, 6400: pixel, 6401:switching transistor, 6402: driver transistor, 6403: capacitor, 6404:light-emitting element, 6405: signal line, 6406: scan line, 6407: powersupply line, 6408: common electrode, 7001: TFT, 7002: light-emittingelement, 7003: cathode, 7004: EL layer, 7005: anode, 7008 a: sourcewiring, 7008 b: source wiring, 7009: partition wall, 7011: driver TFT,7012: light-emitting element, 7013: cathode, 7014: EL layer, 7015:anode, 7016: light-blocking film, 7017: conductive film, 7018 a: sourcewiring, 7018 b: source wiring, 7019: partition wall, 7021: driver TFT,7022: light-emitting element, 7023: cathode, 7024: EL layer, 7025:anode, 7027: conductive film, 7028 a: source wiring, 7028 b: sourcewiring, 7029: partition wall, 7031: insulating layer, 7032: insulatinglayer, 7033: color filter layer, 7034: overcoat layer, 7035: protectiveinsulating layer, 7036: insulating layer, 7037: insulating layer, 7038:insulating layer, 7041: insulating layer, 7042: insulating layer, 7043:color filter layer, 7044: overcoat layer, 7045: protective insulatinglayer, 7046: insulating layer, 7047: insulating layer, 7048: insulatinglayer, 7051: insulating layer, 7052: protective insulating layer, 7053:planarization insulating layer, 7055: insulating layer, 7056: insulatinglayer, 7057: insulating layer, 7058: insulating layer, 7061: driver TFT,7063: color filter layer, 7064: overcoat layer, 7065: protectiveinsulating layer, 7067: conductive film, 7068 a: source wiring, 7068 b:source wiring, 7071: insulating layer, 7072: insulating layer, 7076:insulating layer, 7077: insulating layer, 7078: insulating layer, 9201:display portion, 9202: displayed button, 9203: operation switch, 9204:band portion, 9205: adjusting portion, 9206: camera portion, 9207:speaker, 9208: microphone, 9301: top housing, 9302: bottom housing,9303: display portion, 9304: key board, 9305: external connection port,9306: pointing device, 9307: display portion, 9600: television set,9601: housing, 9603: display portion, 9605: stand, 9607: displayportion, 9609: operation key, 9610: remote controller, 9700: digitalphoto frame, 9701: housing, 9703: display portion, 9881: housing, 9882:display portion, 9883: display portion, 9884: speaker portion, 9885:operation key, 9886: recording medium insertion portion, 9887:connection terminal, 9888: sensor, 9889: microphone, 9890: LED lamp,9891: housing, 9893: connection portion, 9900: slot machine, 9901:housing, 9903: display portion.

1. A semiconductor device comprising: a first insulating layercomprising silicon nitride over a substrate; a first conductive layercomprising copper over the first insulating layer; a second conductivelayer covering the first conductive layer; a second insulating layercomprising silicon nitride over the second conductive layer; a thirdinsulating layer comprising silicon oxide over the second insulatinglayer; an oxide semiconductor layer over the third insulating layer; athird conductive layer over the oxide semiconductor layer and a fourthconductive layer over the oxide semiconductor layer; a fourth insulatinglayer comprising silicon oxide over the oxide semiconductor layer; afifth insulating layer comprising silicon nitride over the fourthinsulating layer; a fifth conductive layer over the fifth insulatinglayer, the fifth conductive layer electrically connected to one of thethird conductive layer and the fourth conductive layer; a sixthconductive layer comprising copper over the fifth conductive layer; asixth insulating layer comprising silicon nitride covering the sixthconductive layer; and a seventh conductive layer over the sixthinsulating layer, the seventh conductive layer electrically connected tothe other of the third conductive layer and the fourth conductive layer,wherein the first conductive layer and the sixth conductive layer do notoverlap with the oxide semiconductor layer, and wherein the thirdconductive layer and the fourth conductive layer each comprise samematerial.
 2. The semiconductor device according to claim 1, wherein thefirst conductive layer further comprises at least one element selectedthe group consisting of tungsten, tantalum, molybdenum, titanium,chromium, zirconium, and calcium.
 3. The semiconductor device accordingto claim 1, wherein the second conductive layer comprises an elementhaving a higher melting point than copper.
 4. The semiconductor deviceaccording to claim 1, wherein the oxide semiconductor layer comprises atleast one of indium, gallium, and zinc.
 5. The semiconductor deviceaccording to claim 1, wherein the sixth conductive layer furthercomprises at least one element selected from the group consisting oftungsten, tantalum, molybdenum, titanium, chromium, zirconium, andcalcium.
 6. The semiconductor device according to claim 1, wherein eachof the first conductive layer and the sixth conductive layer issurrounded by layers comprising silicon nitride.
 7. The semiconductordevice according to claim 1, wherein the fourth insulating layer is incontact with the oxide semiconductor layer between the third conductivelayer and the fourth conductive layer
 8. The semiconductor deviceaccording to claim 7, wherein the fourth insulating layer is providedover the third conductive layer and the fourth conductive layer.
 9. Thesemiconductor device according to claim 7, wherein the third conductivelayer and the fourth conductive layer each are provided over the fourthinsulating layer.
 10. The semiconductor device according to claim 1,wherein the seventh conductive layer comprises a transparent conductivematerial.
 11. A semiconductor device comprising: a first insulatinglayer comprising silicon nitride over a substrate; a first conductivelayer comprising copper over the first insulating layer; a secondconductive layer covering the first conductive layer; a secondinsulating layer comprising silicon nitride over the second conductivelayer; a third insulating layer comprising silicon oxide over the secondinsulating layer; an island-like oxide semiconductor layer over thethird insulating layer; third conductive layers over the island-likeoxide semiconductor layer, the third conductive layers functioning as asource electrode and a drain electrode; a fourth insulating layercomprising silicon oxide over the third conductive layers; a fifthinsulating layer comprising silicon nitride over the fourth insulatinglayer; a fourth conductive layer electrically connected to one of thethird conductive layers functioning as the source electrode and thedrain electrode through an opening provided in the fourth insulatinglayer and the fifth insulating layer; a fifth conductive layercomprising copper which overlaps with the fourth conductive layer; asixth insulating layer comprising silicon nitride covering the fifthconductive layer; and a sixth conductive layer electrically connected tothe other of the third conductive layers functioning as the sourceelectrode and the drain electrode through an opening provided in thefourth insulating layer, the fifth insulating layer, and the sixthinsulating layer, wherein the first conductive layer and the fifthconductive layer do not overlap with the island-like oxide semiconductorlayer.
 12. The semiconductor device according to claim 11, wherein thefirst conductive layer further comprises at least one element selectedfrom the group consisting of tungsten, tantalum, molybdenum, titanium,chromium, aluminum, zirconium, and calcium.
 13. The semiconductor deviceaccording to claim 11, wherein the second conductive layer comprises anelement having a higher melting point than copper.
 14. The semiconductordevice according to claim 11, wherein the island-like oxidesemiconductor layer comprises at least one of indium, gallium, and zinc.15. The semiconductor device according to claim 11, wherein the fifthconductive layer includes at least one element selected from tungsten,tantalum, molybdenum, titanium, chromium, aluminum, zirconium, andcalcium.
 16. The semiconductor device according to claim 11, whereineach of the first conductive layer and the fifth conductive layer iscovered with layers comprising silicon nitride.
 17. A method formanufacturing a semiconductor device, comprising the steps of: forming afirst insulating layer comprising silicon nitride over a substrate;forming a first conductive layer comprising copper over the firstinsulating layer; forming a second conductive layer so as to cover thefirst conductive layer; forming a second insulating layer comprisingsilicon nitride over the second conductive layer; forming a thirdinsulating layer comprising silicon oxide over the second insulatinglayer; forming an oxide semiconductor layer over the third insulatinglayer; performing a first heat treatment so that hydrogen concentrationof the oxide semiconductor layer is decreased; forming a thirdconductive layer and a fourth conductive layer over the oxidesemiconductor layer; forming a fourth insulating layer comprisingsilicon oxide over the oxide semiconductor layer; forming a fifthinsulating layer comprising silicon nitride over the fourth insulatinglayer; forming a fifth conductive layer over the fifth insulating layerso as to be electrically connected one of the third conductive layer andthe fourth conductive layer; forming a sixth conductive layer comprisingcopper over the fifth conductive layer; forming a sixth insulating layercomprising silicon nitride so as to be cover the sixth conductive layer;and forming a seventh conductive layer over the sixth insulating layerso as to be electrically connected to the other of the third conductivelayer and the fourth conductive layer, wherein the first conductivelayer and the sixth conductive layer do not overlap with the oxidesemiconductor layer, and wherein the third conductive layer and thefourth conductive layer each comprise same material.
 18. The method formanufacturing a semiconductor device according to claim 17, wherein thefirst heat treatment is performed by a rapid thermal anneal method. 19.The method for manufacturing a semiconductor device according to claim17, wherein the first heat treatment is performed at higher than orequal to 400° C. and lower than or equal to 750° C.
 20. The method formanufacturing a semiconductor device according to claim 17, wherein thefirst heat treatment is performed in a rare gas or nitrogen atmosphere.21. The method for manufacturing a semiconductor device according toclaim 17, further comprising the step of performing a second heattreatment at a lower temperature than that of the first heat treatmentafter the fourth insulating layer is formed.
 22. The method formanufacturing a semiconductor device according to claim 21, wherein thesecond heat treatment is performed at higher than or equal to 200° C.and lower than or equal to 400° C.
 23. The method for manufacturing asemiconductor device according to claim 17, wherein the first conductivelayer further comprises at least one element selected the groupconsisting of tungsten, tantalum, molybdenum, chromium, aluminum,zirconium, and calcium.
 24. The method for manufacturing a semiconductordevice according to claim 17, wherein the second conductive layercomprises an element having a higher melting point than copper.
 25. Themethod for manufacturing a semiconductor device according to claim 17,wherein the oxide semiconductor layer comprises at least one of indium,gallium, and zinc.
 26. The method for manufacturing a semiconductordevice according to claim 17, wherein the sixth conductive layercomprises at least one element selected from the group consisting oftungsten, tantalum, molybdenum, titanium, chromium, aluminum, zirconium,and calcium.
 27. A method for manufacturing a semiconductor device,comprising the steps of: forming a first insulating layer includingsilicon nitride over a substrate; forming a first conductive layerincluding copper over the first insulating layer; forming a secondconductive layer over the first conductive layer so as to cover thefirst conductive layer; forming a second insulating layer comprisingsilicon nitride over the second conductive layer; forming a thirdinsulating layer comprising silicon oxide over the second insulatinglayer; forming an island-like oxide semiconductor layer over the thirdinsulating layer; forming third conductive layers functioning as asource electrode and a drain electrode over the island-like oxidesemiconductor layer; forming a fourth insulating layer comprisingsilicon oxide over the third conductive layers; forming a fifthinsulating layer comprising silicon nitride over the fourth insulatinglayer; forming a fourth conductive layer so as to be electricallyconnected to one of the third conductive layers functioning as thesource electrode and the drain electrode through an opening provided inthe fourth insulating layer and the fifth insulating layer; forming afifth conductive layer comprising copper which overlaps with the fourthconductive layer; forming a sixth insulating layer comprising siliconnitride which covers the fifth conductive layer; and forming a sixthconductive layer so as to be electrically connected to the other of thethird conductive layers functioning as the source electrode and thedrain electrode through an opening provided in the fourth insulatinglayer, the fifth insulating layer, and the sixth insulating layer,wherein a first heat treatment is performed so that hydrogenconcentration of the island-like oxide semiconductor layer is decreased,and wherein the first conductive layer and the fifth conductive layer donot overlap with the island-like oxide semiconductor layer.
 28. Themethod for manufacturing a semiconductor device according to claim 27,wherein the first heat treatment is performed by a rapid thermal annealmethod.
 29. The method for manufacturing a semiconductor deviceaccording to claim 27, wherein the first heat treatment is performed athigher than or equal to 400° C. and lower than 750° C.
 30. The methodfor manufacturing a semiconductor device according to claim 27, whereinthe first heat treatment is performed in a rare gas or nitrogenatmosphere.
 31. The method for manufacturing a semiconductor deviceaccording to claim 27, further comprising a step of performing a secondheat treatment at a temperature lower than that of the first heattreatment after the fourth insulating layer is formed.
 32. The methodfor manufacturing a semiconductor device according to claim 31, whereinthe second heat treatment is performed at higher than or equal to 200°C. and lower than or equal to 400° C.
 33. The method for manufacturing asemiconductor device according to claim 27, wherein the first conductivelayer comprises at least one element selected from the group consistingof tungsten, tantalum, molybdenum, titanium, chromium, aluminum,zirconium, and calcium.
 34. The method for manufacturing a semiconductordevice according to claim 27, wherein the second conductive layercomprises an element having a higher melting point than copper.
 35. Themethod for manufacturing a semiconductor device according to claim 27,wherein the island-like oxide semiconductor layer comprises at least oneof indium, gallium and zinc.
 36. The method for manufacturing asemiconductor device according to claim 27, wherein the fifth conductivelayer comprises at least one element selected from the group consistingof tungsten, tantalum, molybdenum, titanium, chromium, aluminum,zirconium, and calcium.